Page 110 - Produits Taiwan Semiconductor Corporation

Référence	Fabricant	Description	paquet	Stock
BZD27C47P RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 47V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 47V Tolerance: ±6.38% Power - Max: 1W Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 1µA @ 36V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock4 256
BZD27C9V1P MTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 9.1V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 9.05V Tolerance: ±6.07% Power - Max: 1W Impedance (Max) (Zzt): 4 Ohms Current - Reverse Leakage @ Vr: 10µA @ 5V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock3 840
BZD27C33P MQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 33V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 33V Tolerance: ±6.06% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 24V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock2 496
BZD27C16P RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 16V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 16.2V Tolerance: ±5.55% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 12V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock3 200
1SMB5953 M4G	Taiwan Semiconductor Corporation	DIODE, ZENER, 150V, 3000MW, 5%, Voltage - Zener (Nom) (Vz): 150V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 600 Ohms Current - Reverse Leakage @ Vr: 1µA @ 114V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	paquet: DO-214AA, SMB	Stock4 592
1SMA4740HM2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 10V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 10V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 5µA @ 7.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	paquet: DO-214AC, SMA	Stock6 640
BZD17C12P RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 12V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 12V Tolerance: ±5.41% Power - Max: 800mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 3µA @ 9.1V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock7 056
BZT52B6V8-G RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.8V, 410MW, 2%, S Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±2% Power - Max: 410mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 2µA @ 4V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	paquet: SOD-123	Stock4 192
TS8P05G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 8A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	paquet: 4-SIP, TS-6P	Stock7 872
DBL203GHC1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 2A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	paquet: 4-DIP (0.300", 7.62mm)	Stock5 360
DBLS208GHRDG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 2A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 1200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	paquet: 4-SMD, Gull Wing	Stock6 944
1PGSMB5952HR5G	Taiwan Semiconductor Corporation	DIODE ZENER 130V 3W DO214AA Voltage - Zener (Nom) (Vz): 130 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 98.8 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	paquet: -	Request a Quote
T10JA07G-K	Taiwan Semiconductor Corporation	10A, 1000V, STANDARD BRIDGE RECT Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	paquet: -	Stock4 500
SFS1604G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock4 800
TSM650N15CR	Taiwan Semiconductor Corporation	150V, 24A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.6W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	paquet: -	Request a Quote
BZT52C4V7K	Taiwan Semiconductor Corporation	SOD-523F, 200MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 4.7 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 2 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	paquet: -	Request a Quote
MUR305S	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock9 000
MBRF8150CT	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 150V 8A ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 8A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	paquet: -	Request a Quote
BZX55B4V3	Taiwan Semiconductor Corporation	DO-35, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 4.3 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 75 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	paquet: -	Request a Quote
DBL105G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 1A DBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	paquet: -	Stock13 131
FR154G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock21 000
PU8JC	Taiwan Semiconductor Corporation	25NS, 8A, 600V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 58pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock9 000
BZY55C27-RBG	Taiwan Semiconductor Corporation	DIODE ZENER 27V 500MW 0805 Voltage - Zener (Nom) (Vz): 27 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 20 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	paquet: -	Request a Quote
SF2004G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A TO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock2 976
GBPC5010M	Taiwan Semiconductor Corporation	50A, 1000V, STANDARD BRIDGE RECT Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	paquet: -	Stock585
MMSZ4679-RHG	Taiwan Semiconductor Corporation	SOD-123, 500MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 2 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): - Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	paquet: -	Request a Quote
SR815	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 8A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote
TST30L60CW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 15A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock189