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Produits Rohm Semiconductor - Diodes - Redresseurs - Simples

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Fabricant
Description
paquet
Stock
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Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RFN10NS4STL
Rohm Semiconductor

DIODE GEN PURP 430V 10A LPDS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 430 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 430 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
  • Operating Temperature - Junction: 150°C
paquet: -
Stock3 000
430 V
10A
1.55 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
10 µA @ 430 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
150°C
1SS4009UTE61
Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
YQ2LAM10BTFTR
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 2A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 175°C
paquet: -
Stock9 000
100 V
2A
670 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
15 µA @ 100 V
60pF @ 4V, 1MHz
Surface Mount
SOD-128
PMDTM
175°C
YQ3MM10BTR
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 3A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 175°C
paquet: -
Stock9 000
100 V
3A
770 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
15 µA @ 100 V
60pF @ 4V, 1MHz
Surface Mount
SOD-123F
PMDU
175°C
RFUH5TF6SC9
Rohm Semiconductor

DIODE GEN PURP 600V 5A TO220ACFP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220ACFP
  • Operating Temperature - Junction: 150°C
paquet: -
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600 V
5A
2.8 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220ACFP
150°C
RB520S-30FHTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RBR2VWM60ATR
Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: PMDE
  • Operating Temperature - Junction: 150°C
paquet: -
Stock23 175
60 V
2A
650 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
75 µA @ 60 V
-
Surface Mount
2-SMD, Flat Lead
PMDE
150°C
RBR3MM30ATFTR
Rohm Semiconductor

DIODE SCHOTTKY 30V 3A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock26 313
30 V
3A
510 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RB068VWM-60TFTR
Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: PMDE
  • Operating Temperature - Junction: 175°C
paquet: -
Stock7 056
60 V
2A
840 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 nA @ 60 V
-
Surface Mount
2-SMD, Flat Lead
PMDE
175°C
RFV8BM6SFHTL
Rohm Semiconductor

DIODE GEN PURP 600V 8A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock3 735
600 V
8A
2.8 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
10 µA @ 600 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
150°C (Max)
RB160VYM-60FHTR
Rohm Semiconductor

DIODE SCHOTTKY 60V 1A TUMD2M

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6.65 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: TUMD2M
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
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60 V
1A
670 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
6.65 ns
40 µA @ 60 V
-
Surface Mount
2-SMD, Flat Lead
TUMD2M
150°C (Max)
RBR3L40ADDTE25
Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C
paquet: -
Stock4 635
40 V
3A
690 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 40 V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C
RB511VM-30TE-17
Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 7 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 125°C (Max)
paquet: -
Stock44 091
30 V
100mA
370 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
7 µA @ 10 V
-
Surface Mount
SC-90, SOD-323F
UMD2
125°C (Max)
RFN20NS3STL
Rohm Semiconductor

DIODE GEN PURP 350V 20A LPDS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 350 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 350 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
  • Operating Temperature - Junction: 150°C
paquet: -
Stock2 367
350 V
20A
1.35 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 350 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
150°C
YQ2LAM10BTR
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 2A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 175°C
paquet: -
Stock8 970
100 V
2A
670 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
15 µA @ 100 V
60pF @ 4V, 1MHz
Surface Mount
SOD-128
PMDTM
175°C
RBR3MM60BTFTR
Rohm Semiconductor

DIODE SCHOTTKY 60V 3A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock35 022
60 V
3A
610 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
120 µA @ 60 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RB561SS-40T2R
Rohm Semiconductor

DIODE SCHOTTKY 40V 500MA KMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 560 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0603 (1608 Metric)
  • Supplier Device Package: KMD2
  • Operating Temperature - Junction: 125°C
paquet: -
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40 V
500mA
560 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 40 V
-
Surface Mount
0603 (1608 Metric)
KMD2
125°C
SCS208AGC17
Rohm Semiconductor

DIODE SIL CARB 650V 8A TO220ACFP

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 160 µA @ 600 V
  • Capacitance @ Vr, F: 291pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220ACFP
  • Operating Temperature - Junction: 175°C
paquet: -
Stock2 967
650 V
8A
1.55 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
160 µA @ 600 V
291pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220ACFP
175°C
RB521S-30FSTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RFN20NS4STL
Rohm Semiconductor

DIODE GEN PURP 430V 20A LPDS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 430 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 430 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
  • Operating Temperature - Junction: 150°C
paquet: -
Stock2 649
430 V
20A
1.55 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
10 µA @ 430 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
150°C
RB751S-40SPTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RB520S-40FHTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RB751S-40FHTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RB068LAM-30TFTR
Rohm Semiconductor

DIODE SCHOTTKY 30V 2A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800 nA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock24 555
30 V
2A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
800 nA @ 30 V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
RB511SM-30FHT2R
Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA EMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 7 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: EMD2
  • Operating Temperature - Junction: 125°C (Max)
paquet: -
Stock155 775
30 V
100mA
370 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
7 µA @ 10 V
-
Surface Mount
SC-79, SOD-523
EMD2
125°C (Max)
SCS310AHGC9
Rohm Semiconductor

DIODE SIL CARB 650V 10A TO220ACP

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 500pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220ACP
  • Operating Temperature - Junction: 175°C (Max)
paquet: -
Stock1 176
650 V
10A
1.5 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
500pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220ACP
175°C (Max)
RB450UMTL
Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD3F

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 40 V
  • Capacitance @ Vr, F: 6pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: UMD3F
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock7 296
40 V
100mA
550 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
10 µA @ 40 V
6pF @ 10V, 1MHz
Surface Mount
SC-85
UMD3F
150°C (Max)
RB522ES-30T15R
Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA SMD0603

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 7 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: SMD0603
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock192 135
30 V
100mA
370 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
7 µA @ 10 V
-
Surface Mount
2-SMD, No Lead
SMD0603
150°C (Max)