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Produits Rohm Semiconductor - Diodes - Redresseurs - Simples

Dossiers 1 270
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RSX501LAM-20TR
Rohm Semiconductor

DIODE SCHOTTKY 20V 5A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 390 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 125°C
paquet: -
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20 V
5A
390 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 20 V
-
Surface Mount
SOD-128
PMDTM
125°C
RB550ASA-30FHT2RB
Rohm Semiconductor

LOW VF, 30V, 500MA, DFN1006-2W,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: SOD-882
  • Supplier Device Package: DFN1006-2W
  • Operating Temperature - Junction: 150°C
paquet: -
Stock23 940
30 V
500mA
590 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
35 µA @ 30 V
-
Surface Mount, Wettable Flank
SOD-882
DFN1006-2W
150°C
RB522S-30T9TE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RBLQ3LAM10TFTR
Rohm Semiconductor

DIODE SCHOTTKY 100V 3A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 µA @ 100 V
  • Capacitance @ Vr, F: 140pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 175°C
paquet: -
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100 V
3A
640 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
30 µA @ 100 V
140pF @ 4V, 1MHz
Surface Mount
SOD-128
PMDTM
175°C
RB521ZS-308EPT2R
Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA GMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 7 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: GMD2
  • Operating Temperature - Junction: 150°C
paquet: -
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30 V
100mA
370 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
7 µA @ 10 V
-
Surface Mount
0201 (0603 Metric)
GMD2
150°C
RBR3LAM60BTFTR
Rohm Semiconductor

AUTOMOTIVE SCHOTTKY BARRIER DIOD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock6 162
60 V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 60 V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
1SS4007STE61
Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RB168VAM-60TR
Rohm Semiconductor

DIODE SCHOTTKY 60V 1A TUMD2M

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: TUMD2M
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock29 709
60 V
1A
820 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 60 V
-
Surface Mount
2-SMD, Flat Lead
TUMD2M
150°C (Max)
YQ3MM10BTFTR
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 3A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 175°C
paquet: -
Stock9 000
100 V
3A
770 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
15 µA @ 100 V
60pF @ 4V, 1MHz
Surface Mount
SOD-123F
PMDU
175°C
RB560VM-40TE-17
Rohm Semiconductor

DIODE SCHOTTKY 40V 500MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock11 526
40 V
500mA
640 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
40 µA @ 40 V
-
Surface Mount
SC-90, SOD-323F
UMD2
150°C (Max)
BAS16T116
Rohm Semiconductor

DIODE GEN PURP 80V 100MA SSD3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 70 V
  • Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SSD3
  • Operating Temperature - Junction: 150°C
paquet: -
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80 V
100mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
100 nA @ 70 V
3.5pF @ 6V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SSD3
150°C
RB068L-40DDTE25
Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 690 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C
paquet: -
Stock108
40 V
2A
690 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 40 V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C
RFS30TZ6SGC13
Rohm Semiconductor

DIODE GEN PURP 650V 30A TO247GE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247GE
  • Operating Temperature - Junction: 175°C
paquet: -
Stock1 755
650 V
30A
2.3 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 650 V
-
Through Hole
TO-247-2
TO-247GE
175°C
RB088RSM15STFTL1
Rohm Semiconductor

150V 10A, TO-277GE, ULTRA LOW IR

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 175°C
paquet: -
Stock11 910
150 V
10A
880 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
4.5 µA @ 150 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
175°C
RB088RSM10STFTL1
Rohm Semiconductor

100V 10A, TO-277GE, ULTRA LOW IR

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 175°C
paquet: -
Stock10 425
100 V
10A
840 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
3.7 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
175°C
YQ30NL10SETL
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 30A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
  • Operating Temperature - Junction: 150°C
paquet: -
Stock3 000
100 V
30A
860 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 100 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
150°C
RB068LB100TBR1
Rohm Semiconductor

SUPER LOW IR, 100V 2A, SMBP, SCH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 810 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBP
  • Operating Temperature - Junction: 175°C
paquet: -
Stock8 961
100 V
2A
810 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5 µA @ 100 V
-
Surface Mount
DO-214AA, SMB
SMBP
175°C
RBS2MM40CTR
Rohm Semiconductor

RBS2MM40C IS SUPER LOW VF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 390 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 125°C
paquet: -
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20 V
2A
390 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
600 µA @ 20 V
-
Surface Mount
SOD-123F
PMDU
125°C
BAT54HMT116
Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA SSD3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 12pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SSD3
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock9 153
30 V
200mA
800 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
2 µA @ 25 V
12pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SSD3
150°C (Max)
RB411VAM-50TR
Rohm Semiconductor

DIODE SCHOTTKY 20V 500MA TUMD2M

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: TUMD2M
  • Operating Temperature - Junction: 125°C
paquet: -
Stock2 967
20 V
500mA
500 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
30 µA @ 10 V
-
Surface Mount
2-SMD, Flat Lead
TUMD2M
125°C
RBS2MM40BTR
Rohm Semiconductor

DIODE SCHOTTKY 20V 2A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 125°C
paquet: -
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20 V
2A
410 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 20 V
-
Surface Mount
SOD-123F
PMDU
125°C
YQ30NL10SDTL
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 30A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 990 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 95 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
  • Operating Temperature - Junction: 150°C
paquet: -
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100 V
30A
990 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
95 µA @ 100 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
150°C
RB521S-30GHTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RBS2MM40ATR
Rohm Semiconductor

DIODE SCHOTTKY 20V 2A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 125°C
paquet: -
Stock12
20 V
2A
480 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 20 V
-
Surface Mount
SOD-123F
PMDU
125°C
RB530SM-40T2R
Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA EMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: EMD2
  • Operating Temperature - Junction: 150°C
paquet: -
Stock23 700
40 V
100mA
710 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
15 µA @ 40 V
-
Surface Mount
SC-79, SOD-523
EMD2
150°C
RFN3BGE2STL
Rohm Semiconductor

DIODE GEN PURP 200V 3A TO252GE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252GE
  • Operating Temperature - Junction: 150°C
paquet: -
Stock7 170
200 V
3A
980 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 200 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252GE
150°C
RB168MM-30TR
Rohm Semiconductor

DIODE SCHOTTKY 30V 1A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600 nA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
paquet: -
Stock102 147
30 V
1A
690 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
600 nA @ 30 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RSX078BM2STL
Rohm Semiconductor

200V 5A, TO-252, ULTRA LOW IR SB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 nA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 175°C
paquet: -
Stock7 404
200 V
5A
920 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 nA @ 200 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
175°C