Page 16 - Produits Panasonic Electronic Components - Transistors - Bipolaires (BJT) - Simples, prépolarisés

Référence	Fabricant	Description	paquet	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
UNR921CJ0L	Panasonic Electronic Components	TRANS PREBIAS NPN 125MW SSMINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	paquet: SC-89, SOT-490	Stock7 584	100mA	50V	-	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	125mW	Surface Mount	SC-89, SOT-490	SSMini3-F1
UNR911DJ0L	Panasonic Electronic Components	TRANS PREBIAS PNP 125MW SSMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	paquet: SC-89, SOT-490	Stock4 256	100mA	50V	47k	10k	30 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	125mW	Surface Mount	SC-89, SOT-490	SSMini3-F1
UNR521W00L	Panasonic Electronic Components	TRANS PREBIAS NPN 150MW SMINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 100MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	paquet: SC-70, SOT-323	Stock2 432	100mA	50V	-	100k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	100MHz	150mW	Surface Mount	SC-70, SOT-323	SMini3-G1
UNR521T00L	Panasonic Electronic Components	TRANS PREBIAS NPN 150MW SMINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	paquet: SC-70, SOT-323	Stock6 992	100mA	50V	22k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	150mW	Surface Mount	SC-70, SOT-323	SMini3-G1
UNR511T00L	Panasonic Electronic Components	TRANS PREBIAS PNP 150MW SMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	paquet: SC-70, SOT-323	Stock5 552	100mA	50V	22k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	150mW	Surface Mount	SC-70, SOT-323	SMini3-G1
UNR422200A	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock6 192	500mA	50V	4.7k	4.7k	50 @ 100mA, 10V	250mV @ 5mA, 100mA	1µA	200MHz	300mW	Through Hole	NS-B1	NS-B1
UNR422100A	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock3 376	500mA	50V	2.2k	2.2k	40 @ 100mA, 10V	250mV @ 5mA, 100mA	1µA	200MHz	300mW	Through Hole	NS-B1	NS-B1
UNR421L00A	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock7 728	100mA	50V	4.7k	4.7k	20 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	300mW	Through Hole	NS-B1	NS-B1
UNR421F00A	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock3 408	100mA	50V	4.7k	10k	30 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	300mW	Through Hole	NS-B1	NS-B1
UNR421D00A	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock6 960	100mA	50V	47k	10k	30 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	300mW	Through Hole	NS-B1	NS-B1
UNR421900A	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock3 584	100mA	50V	1k	10k	30 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	300mW	Through Hole	NS-B1	NS-B1
UNR42170RA	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock5 840	100mA	50V	22k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	300mW	Through Hole	NS-B1	NS-B1
UNR421400A	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock3 568	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	300mW	Through Hole	NS-B1	NS-B1
UNR421100A	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock6 080	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	300mW	Through Hole	NS-B1	NS-B1
UNR42100RA	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock2 192	100mA	50V	47k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	300mW	Through Hole	NS-B1	NS-B1
UNR412300A	Panasonic Electronic Components	TRANS PREBIAS PNP 300MW NS-B1 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: NS-B1	paquet: 3-SIP	Stock3 344	500mA	50V	10k	10k	60 @ 100mA, 10V	250mV @ 5mA, 100mA	1µA	200MHz	300mW	Through Hole	3-SIP	NS-B1
UNR412200A	Panasonic Electronic Components	TRANS PREBIAS PNP 300MW NS-B1 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: NS-B1	paquet: 3-SIP	Stock7 232	500mA	50V	4.7k	4.7k	50 @ 100mA, 10V	250mV @ 5mA, 100mA	1µA	200MHz	300mW	Through Hole	3-SIP	NS-B1
UNR412100A	Panasonic Electronic Components	TRANS PREBIAS PNP 300MW NS-B1 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: NS-B1	paquet: 3-SIP	Stock5 456	500mA	50V	2.2k	2.2k	40 @ 100mA, 10V	250mV @ 5mA, 100mA	1µA	200MHz	300mW	Through Hole	3-SIP	NS-B1
UNR411H00A	Panasonic Electronic Components	TRANS PREBIAS PNP 300MW NS-B1 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock2 128	100mA	50V	2.2k	10k	30 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	300mW	Through Hole	NS-B1	NS-B1
UNR411900A	Panasonic Electronic Components	TRANS PREBIAS PNP 300MW NS-B1 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock4 288	100mA	50V	1k	10k	30 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	300mW	Through Hole	NS-B1	NS-B1
UNR41160RA	Panasonic Electronic Components	TRANS PREBIAS PNP 300MW NS-B1 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock4 064	100mA	50V	4.7k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	300mW	Through Hole	NS-B1	NS-B1
UNR411100A	Panasonic Electronic Components	TRANS PREBIAS PNP 300MW NS-B1 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	paquet: NS-B1	Stock7 872	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	300mW	Through Hole	NS-B1	NS-B1
UNR31A900L	Panasonic Electronic Components	TRANS PREBIAS PNP 100MW SSSMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F1	paquet: SOT-723	Stock7 728	80mA	50V	1k	10k	30 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	100mW	Surface Mount	SOT-723	SSSMini3-F1
UNRF2A700A	Panasonic Electronic Components	TRANS PREBIAS NPN 100MW ML3-N2 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: ML3-N2	paquet: SC-101, SOT-883	Stock3 376	80mA	50V	22k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	100mW	Surface Mount	SC-101, SOT-883	ML3-N2
UNR32AB00L	Panasonic Electronic Components	TRANS PREBIAS NPN 100MW SSSMINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F1	paquet: SOT-723	Stock5 136	80mA	50V	100k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	100mW	Surface Mount	SOT-723	SSSMini3-F1
UNR31AM00L	Panasonic Electronic Components	TRANS PREBIAS PNP 100MW SSSMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F1	paquet: SOT-723	Stock83 760	80mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	100mW	Surface Mount	SOT-723	SSSMini3-F1
UNRF1A400A	Panasonic Electronic Components	TRANS PREBIAS PNP 100MW ML3-N2 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: ML3-N2	paquet: SC-101, SOT-883	Stock6 352	80mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	100mW	Surface Mount	SC-101, SOT-883	ML3-N2
UNR32AN00L	Panasonic Electronic Components	TRANS PREBIAS NPN 100MW SSSMINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F1	paquet: SOT-723	Stock7 680	80mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	100mW	Surface Mount	SOT-723	SSSMini3-F1

UNR921CJ0L

Panasonic Electronic Components

TRANS PREBIAS NPN 125MW SSMINI3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1

paquet: SC-89, SOT-490

Stock7 584

100mA

50V

-

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

125mW

Surface Mount

SC-89, SOT-490

SSMini3-F1

UNR911DJ0L

Panasonic Electronic Components

TRANS PREBIAS PNP 125MW SSMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1

paquet: SC-89, SOT-490

Stock4 256

100mA

50V

47k

10k

30 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

125mW

Surface Mount

SC-89, SOT-490

SSMini3-F1

UNR521W00L

Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 100MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

paquet: SC-70, SOT-323

Stock2 432

100mA

50V

-

100k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

100MHz

150mW

Surface Mount

SC-70, SOT-323

SMini3-G1

UNR521T00L

Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

paquet: SC-70, SOT-323

Stock6 992

100mA

50V

22k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

150mW

Surface Mount

SC-70, SOT-323

SMini3-G1

UNR511T00L

Panasonic Electronic Components

TRANS PREBIAS PNP 150MW SMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

paquet: SC-70, SOT-323

Stock5 552

100mA

50V

22k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

150mW

Surface Mount

SC-70, SOT-323

SMini3-G1

UNR422200A

Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock6 192

500mA

50V

4.7k

50 @ 100mA, 10V

250mV @ 5mA, 100mA

1µA

200MHz

300mW

Through Hole

NS-B1

UNR422100A

Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock3 376

500mA

50V

2.2k

40 @ 100mA, 10V

250mV @ 5mA, 100mA

1µA

200MHz

300mW

Through Hole

NS-B1

UNR421L00A

Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock7 728

100mA

50V

4.7k

20 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

300mW

Through Hole

NS-B1

UNR421F00A

Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock3 408

100mA

50V

4.7k

10k

30 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

300mW

Through Hole

NS-B1

UNR421D00A

Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock6 960

100mA

50V

47k

10k

30 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

300mW

Through Hole

NS-B1

UNR421900A

Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock3 584

100mA

50V

1k

10k

30 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

300mW

Through Hole

NS-B1

UNR42170RA

Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock5 840

100mA

50V

22k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

300mW

Through Hole

NS-B1

UNR421400A

Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock3 568

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

300mW

Through Hole

NS-B1

UNR421100A

Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock6 080

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

300mW

Through Hole

NS-B1

UNR42100RA

Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock2 192

100mA

50V

47k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

300mW

Through Hole

NS-B1

UNR412300A

Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: NS-B1

paquet: 3-SIP

Stock3 344

500mA

50V

10k

60 @ 100mA, 10V

250mV @ 5mA, 100mA

1µA

200MHz

300mW

Through Hole

3-SIP

NS-B1

UNR412200A

Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: NS-B1

paquet: 3-SIP

Stock7 232

500mA

50V

4.7k

50 @ 100mA, 10V

250mV @ 5mA, 100mA

1µA

200MHz

300mW

Through Hole

3-SIP

NS-B1

UNR412100A

Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: NS-B1

paquet: 3-SIP

Stock5 456

500mA

50V

2.2k

40 @ 100mA, 10V

250mV @ 5mA, 100mA

1µA

200MHz

300mW

Through Hole

3-SIP

NS-B1

UNR411H00A

Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock2 128

100mA

50V

2.2k

10k

30 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

300mW

Through Hole

NS-B1

UNR411900A

Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock4 288

100mA

50V

1k

10k

30 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

300mW

Through Hole

NS-B1

UNR41160RA

Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock4 064

100mA

50V

4.7k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

300mW

Through Hole

NS-B1

UNR411100A

Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

paquet: NS-B1

Stock7 872

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

300mW

Through Hole

NS-B1

UNR31A900L

Panasonic Electronic Components

TRANS PREBIAS PNP 100MW SSSMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1

paquet: SOT-723

Stock7 728

80mA

50V

1k

10k

30 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

100mW

Surface Mount

SOT-723

SSSMini3-F1

UNRF2A700A

Panasonic Electronic Components

TRANS PREBIAS NPN 100MW ML3-N2

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: ML3-N2

paquet: SC-101, SOT-883

Stock3 376

80mA

50V

22k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

100mW

Surface Mount

SC-101, SOT-883

ML3-N2

UNR32AB00L

Panasonic Electronic Components

TRANS PREBIAS NPN 100MW SSSMINI3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1

paquet: SOT-723

Stock5 136

80mA

50V

100k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

100mW

Surface Mount

SOT-723

SSSMini3-F1

UNR31AM00L

Panasonic Electronic Components

TRANS PREBIAS PNP 100MW SSSMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1

paquet: SOT-723

Stock83 760

80mA

50V

2.2k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

100mW

Surface Mount

SOT-723

SSSMini3-F1

UNRF1A400A

Panasonic Electronic Components

TRANS PREBIAS PNP 100MW ML3-N2

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: ML3-N2

paquet: SC-101, SOT-883

Stock6 352

80mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

100mW

Surface Mount

SC-101, SOT-883

ML3-N2

UNR32AN00L

Panasonic Electronic Components

TRANS PREBIAS NPN 100MW SSSMINI3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1

paquet: SOT-723

Stock7 680

80mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

100mW

Surface Mount

SOT-723

SSSMini3-F1