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Produits ON Semiconductor - Diodes - Redresseurs - Simples

Dossiers 1 234
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot MBR120LSFT1
ON Semiconductor

DIODE SCHOTTKY 20V 1A SOD123L

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123L
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: SOD-123F
Stock58 800
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
SOD-123F
SOD-123L
-55°C ~ 125°C
MBR3060RL
ON Semiconductor

DIODE SCHOTTKY 60V 3A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-201AD, Axial
Stock2 576
60V
3A
620mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 60V
-
Through Hole
DO-201AD, Axial
Axial
-65°C ~ 150°C
MBR835RL
ON Semiconductor

DIODE SCHOTTKY 35V 8A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
paquet: DO-201AA, DO-27, Axial
Stock4 480
35V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 35V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 125°C
hot MBR845RL
ON Semiconductor

DIODE SCHOTTKY 45V 8A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
paquet: DO-201AA, DO-27, Axial
Stock9 432
45V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 125°C
hot MBR840RL
ON Semiconductor

DIODE SCHOTTKY 40V 8A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
paquet: DO-201AA, DO-27, Axial
Stock9 168
40V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 125°C
MURA230T3
ON Semiconductor

DIODE GEN PURP 300V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-214AC, SMA
Stock5 840
300V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
5µA @ 300V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
hot SS12T3
ON Semiconductor

DIODE SCHOTTKY 20V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 45µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock38 340
20V
1A
470mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
45µA @ 20V
-
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
SS22T3
ON Semiconductor

DIODE SCHOTTKY 20V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AA, SMB
Stock7 024
20V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
80SQ045NRL
ON Semiconductor

DIODE SCHOTTKY 45V 8A DO201AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 125°C
paquet: DO-201AA, DO-27, Axial
Stock2 048
45V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-
Through Hole
DO-201AA, DO-27, Axial
-
-65°C ~ 125°C
MURA205T3
ON Semiconductor

DIODE GEN PURP 50V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 940mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-214AC, SMA
Stock3 824
50V
2A
940mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 50V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
hot MURA130T3
ON Semiconductor

DIODE GEN PURP 300V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-214AC, SMA
Stock24 720
300V
2A
1.1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
5µA @ 300V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
hot MURA115T3
ON Semiconductor

DIODE GEN PURP 150V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-214AC, SMA
Stock72 000
150V
2A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
hot MURA105T3
ON Semiconductor

DIODE GEN PURP 50V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-214AC, SMA
Stock94 680
50V
2A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 50V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
MURS240T3
ON Semiconductor

DIODE GEN PURP 400V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-214AA, SMB
Stock3 392
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
5µA @ 400V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
hot MURA210T3
ON Semiconductor

DIODE GEN PURP 100V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 940mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-214AC, SMA
Stock55 680
100V
2A
940mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 100V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
hot MBRS260T3
ON Semiconductor

DIODE SCHOTTKY 60V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: DO-214AA, SMB
Stock24 240
60V
2A
630mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 125°C
hot MBRS410ET3
ON Semiconductor

DIODE SCHOTTKY 10V 4A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-214AB, SMC
Stock30 000
10V
4A
500mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 10V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 150°C
MBRA210ET3
ON Semiconductor

DIODE SCHOTTKY 10V 2A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-214AC, SMA
Stock7 600
10V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 10V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
hot MBRA120ET3
ON Semiconductor

DIODE SCHOTTKY 20V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock130 908
20V
1A
530mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 20V
-
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
hot MR754
ON Semiconductor

DIODE GP 400V 6A MICRODE BUTTON

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Button, Axial
  • Supplier Device Package: Microde Button
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: Button, Axial
Stock4 704
400V
6A
900mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
25µA @ 400V
-
Through Hole
Button, Axial
Microde Button
-65°C ~ 175°C
hot MR756
ON Semiconductor

DIODE GP 600V 6A MICRODE BUTTON

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Button, Axial
  • Supplier Device Package: Microde Button
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: Button, Axial
Stock2 000
600V
6A
900mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
25µA @ 600V
-
Through Hole
Button, Axial
Microde Button
-65°C ~ 175°C
hot MUR8100E
ON Semiconductor

DIODE GEN PURP 1KV 8A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 25µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-220-2
Stock74 208
1000V
8A
1.8V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
25µA @ 1000V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
hot MUR820
ON Semiconductor

DIODE GEN PURP 200V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-220-2
Stock150 780
200V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
hot MUR840
ON Semiconductor

DIODE GEN PURP 400V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-220-2
Stock64 464
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 400V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
hot MUR860
ON Semiconductor

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-220-2
Stock248 472
600V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
hot MBR745
ON Semiconductor

DIODE SCHOTTKY 45V 7.5A TO220-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-220-2
Stock2 143 776
45V
7.5A
840mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
hot MBR735
ON Semiconductor

DIODE SCHOTTKY 35V 7.5A TO220-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-220-2
Stock560 400
35V
7.5A
840mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
hot MUR1520
ON Semiconductor

DIODE GEN PURP 200V 15A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-220-2
Stock80 364
200V
15A
1.05V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C