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Produits NXP - Transistors - Bipolaires (BJT) - Simples

Dossiers 245
Page  4/9
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC879,112
NXP

TRANS NPN DARL 80V 1A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
  • Power - Max: 830mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock4 512
1A
80V
1.8V @ 1mA, 1A
50nA
2000 @ 500mA, 10V
830mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PBSS9110S,126
NXP

TRANS PNP 100V 1A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
  • Power - Max: 830mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock2 816
1A
100V
320mV @ 100mA, 1A
100nA
150 @ 500mA, 5V
830mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBSS9110AS,126
NXP

TRANS PNP 100V 1A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
  • Power - Max: 830mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock2 576
1A
100V
320mV @ 100mA, 1A
100nA
150 @ 500mA, 5V
830mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBSS8110S,126
NXP

TRANS NPN 100V 1A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
  • Power - Max: 830mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock5 904
1A
100V
200mV @ 100mA, 1A
100nA
150 @ 250mA, 10V
830mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBSS8110AS,126
NXP

TRANS NPN 100V 1A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
  • Power - Max: 830mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock2 880
1A
100V
200mV @ 100mA, 1A
100nA
150 @ 250mA, 10V
830mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBSS5350S,126
NXP

TRANS PNP 50V 3A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 830mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock3 008
3A
50V
300mV @ 200mA, 2A
100nA (ICBO)
100 @ 2A, 2V
830mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBSS5160K,115
NXP

TRANS PNP 60V 0.7A SC59

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
  • Power - Max: 425mW
  • Frequency - Transition: 185MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
paquet: TO-236-3, SC-59, SOT-23-3
Stock3 856
700mA
60V
340mV @ 100mA, 1A
100nA
150 @ 500mA, 5V
425mW
185MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PBSS4350S,126
NXP

TRANS NPN 50V 3A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 830mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock3 584
3A
50V
290mV @ 200mA, 2A
100nA (ICBO)
100 @ 2A, 2V
830mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBSS4160K,115
NXP

TRANS NPN 60V 0.75A SC59

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 750mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
  • Power - Max: 425mW
  • Frequency - Transition: 220MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
paquet: TO-236-3, SC-59, SOT-23-3
Stock2 880
750mA
60V
280mV @ 100mA, 1A
100nA
200 @ 500mA, 5V
425mW
220MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PN2907A,126
NXP

TRANS PNP 60V 0.6A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock4 272
600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
500mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PN2222A,126
NXP

TRANS NPN 40V 0.6A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock2 800
600mA
40V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
500mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PMST5401,115
NXP

TRANS PNP 150V 0.3A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
paquet: SC-70, SOT-323
Stock7 392
300mA
150V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
200mW
300MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
PMST5401,135
NXP

TRANS PNP 150V 0.3A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
paquet: SC-70, SOT-323
Stock7 888
300mA
150V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
200mW
300MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
PMEM4030PS,115
NXP

TRANS PNP 50V 2A SOT96-1

  • Transistor Type: PNP + Diode (Isolated)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock3 504
2A
50V
390mV @ 300mA, 3A
100nA (ICBO)
200 @ 1A, 2V
1W
100MHz
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
PMEM4030NS,115
NXP

TRANS NPN 50V 2A SOT96-1

  • Transistor Type: NPN + Diode (Isolated)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock4 080
2A
50V
370mV @ 300mA, 3A
100nA (ICBO)
200 @ 1A, 2V
1W
100MHz
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
PMEM4020PD,115
NXP

TRANS PNP 40V 0.75A 6TSOP

  • Transistor Type: PNP + Diode (Isolated)
  • Current - Collector (Ic) (Max): 750mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
paquet: SC-74, SOT-457
Stock3 200
750mA
40V
530mV @ 200mA, 2A
100nA
300 @ 100mA, 5V
600mW
150MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
PMEM1505NG,115
NXP

TRANS NPN 15V 0.5A 5TSSOP

  • Transistor Type: NPN + Diode (Isolated)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
  • Power - Max: 300mW
  • Frequency - Transition: 420MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: 5-TSSOP
paquet: 5-TSSOP, SC-70-5, SOT-353
Stock3 232
500mA
15V
250mV @ 50mA, 500mA
100nA (ICBO)
150 @ 100mA, 2V
300mW
420MHz
125°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
5-TSSOP
PMBT5401,215
NXP

TRANS PNP 150V 0.3A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
paquet: TO-236-3, SC-59, SOT-23-3
Stock6 176
300mA
150V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
250mW
300MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
PMBT5401,235
NXP

TRANS PNP 150V 0.3A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
paquet: TO-236-3, SC-59, SOT-23-3
Stock6 896
300mA
150V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
250mW
300MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
PH2369,116
NXP

TRANS NPN 15V 0.2A SOT54

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 400nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 500MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock6 064
200mA
15V
250mV @ 1mA, 10mA
400nA (ICBO)
40 @ 10mA, 1V
500mW
500MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PH2369,126
NXP

TRANS NPN 15V 0.2A SOT54

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 400nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 500MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock7 792
200mA
15V
250mV @ 1mA, 10mA
400nA (ICBO)
40 @ 10mA, 1V
500mW
500MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PH2369,112
NXP

TRANS NPN 15V 0.2A SOT54

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 400nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 500MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock2 624
200mA
15V
250mV @ 1mA, 10mA
400nA (ICBO)
40 @ 10mA, 1V
500mW
500MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PBSS5140S,126
NXP

TRANS PNP 40V 1A SOT54

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
  • Power - Max: 830mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock4 160
1A
40V
500mV @ 100mA, 1A
100nA
300 @ 100mA, 5V
830mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBSS4140S,126
NXP

TRANS NPN 40V 1A SOT54

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
  • Power - Max: 830mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock6 832
1A
40V
500mV @ 100mA, 1A
100nA
300 @ 500mA, 5V
830mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPSA92,116
NXP

TRANS PNP 300V 0.1A SOT54

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock3 008
100mA
300V
500mV @ 2mA, 20mA
250nA (ICBO)
25 @ 30mA, 10V
625mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPSA92,126
NXP

TRANS PNP 300V 0.1A SOT54

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock2 480
100mA
300V
500mV @ 2mA, 20mA
250nA (ICBO)
25 @ 30mA, 10V
625mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPSA92,412
NXP

TRANS PNP 300V 0.1A SOT54

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock5 616
100mA
300V
500mV @ 2mA, 20mA
250nA (ICBO)
25 @ 30mA, 10V
625mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MPSA64,116
NXP

TRANS PNP DARL 30V 0.5A SOT54

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock5 376
500mA
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
20000 @ 100mA, 5V
500mW
125MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3