Produits Microsemi Corporation

JANTXV2N3506AL

Microsemi Corporation

TRANS NPN 40V 3A TO5

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5

paquet: TO-205AA, TO-5-3 Metal Can

JAN1N941B-1

Microsemi Corporation

DIODE ZENER 12.28V 500MW DO35

• Voltage - Zener (Nom) (Vz): 11.7V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 15µA @ 8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

paquet: DO-204AH, DO-35, Axial

1PMT5915CE3/TR7

Microsemi Corporation

DIODE ZENER 3.9V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 7.5 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

paquet: DO-216AA

1N4729CPE3/TR8

Microsemi Corporation

DIODE ZENER 3.6V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

1PMT5915C/TR13

Microsemi Corporation

DIODE ZENER 3.9V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 7.5 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

paquet: DO-216AA

1N5380/TR12

Microsemi Corporation

DIODE ZENER 120V 5W T18

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: ±20%
• Power - Max: 5W
• Impedance (Max) (Zzt): 170 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 86.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

paquet: T-18, Axial

1N5270BDO35

Microsemi Corporation

DIODE ZENER 91V 500MW DO35

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 400 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 69V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

paquet: DO-204AH, DO-35, Axial

CDLL5530B

Microsemi Corporation

DIODE ZENER 10V 500MW DO213AB

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

paquet: DO-213AB, MELF

3EZ5.6D2/TR8

Microsemi Corporation

DIODE ZENER 5.6V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

SMBJ5350CE3/TR13

Microsemi Corporation

DIODE ZENER 13V 5W SMBJ

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

paquet: DO-214AA, SMB

1N4733APE3/TR8

Microsemi Corporation

DIODE ZENER 5.1V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

UMAF5817

Microsemi Corporation

DIODE SCHOTTKY 20V 1A ULTRAMITE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Ultramite?
• Supplier Device Package: Ultramite?
• Operating Temperature - Junction: -50°C ~ 125°C

paquet: Ultramite?

JANTX1N3614

Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

paquet: A, Axial

APT2X41DC60J

Microsemi Corporation

DIODE MODULE 600V 40A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 800µA @ 600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Supplier Device Package: SOT-227

paquet: ISOTOP

MSDM75-12

Microsemi Corporation

MOD BRIDGE 3PH 1200V 75A M2-1

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 75A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
• Current - Reverse Leakage @ Vr: 500µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: M2-1

paquet: Module

A2F500M3G-FG256

Microsemi Corporation

IC FPGA 500K GATES 512KB 256-BGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DMA, POR, WDT
• Connectivity: EBI/EMI, Ethernet, I2C, SPI, UART/USART
• Speed: 80MHz
• Primary Attributes: ProASIC?3 FPGA, 500K Gates, 11520 D-Flip-Flops
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

paquet: 256-LBGA

A54SX08-TQ176

Microsemi Corporation

IC FPGA 128 I/O 176TQFP

• Number of LABs/CLBs: 768
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 128
• Number of Gates: 12000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 176-LQFP
• Supplier Device Package: 176-TQFP (24x24)

paquet: 176-LQFP

A1280A-PG176M

Microsemi Corporation

IC FPGA 140 I/O 176CPGA

• Number of LABs/CLBs: 1232
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 140
• Number of Gates: 8000
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 176-BCPGA
• Supplier Device Package: 176-CPGA (39.88x39.88)

paquet: 176-BCPGA

MPF300T-FCG784E

Microsemi Corporation

IC FPGA 388 I/O

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 300000
• Total RAM Bits: 21094400
• Number of I/O: 388
• Number of Gates: -
• Voltage - Supply: 0.97 V ~ 1.08 V
• Mounting Type: -
• Operating Temperature: 0°C ~ 100°C (TJ)
• Package / Case: -
• Supplier Device Package: -

paquet: -

M1A3P1000-2FGG484

Microsemi Corporation

IC FPGA 300 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 300
• Number of Gates: 1000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

paquet: 484-BGA

JANTX1N6151

Microsemi Corporation

TVS DIODE 18.2VWM 34.97VC CPKG

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 18.2V
• Voltage - Breakdown (Min): 21.66V
• Voltage - Clamping (Max) @ Ipp: 34.97V
• Current - Peak Pulse (10/1000µs): 42.75A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: C, Axial

paquet: Axial

MXPLAD36KP78CA

Microsemi Corporation

TVS DIODE 126VC 286A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 78V
• Voltage - Breakdown (Min): 86.7V
• Voltage - Clamping (Max) @ Ipp: 126V
• Current - Peak Pulse (10/1000µs): 286A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

paquet: Nonstandard SMD

1N6133A

Microsemi Corporation

TVS DIODE 98.8VWM BPKG AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 98.8V
• Voltage - Breakdown (Min): 123.5V
• Voltage - Clamping (Max) @ Ipp: 178.8V
• Current - Peak Pulse (10/1000µs): 2.8A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: Axial

paquet: B, Axial

LC7.5

Microsemi Corporation

TVS DIODE 7.5VWM 14.3VC DO202AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 14.3V
• Current - Peak Pulse (10/1000µs): 100A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-202AA (DO-13)

paquet: DO-13

MXLSMLJ85AE3

Microsemi Corporation

TVS DIODE 85VWM 137VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 20.8A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

paquet: DO-214AB, SMC

MXLP4KE24A

Microsemi Corporation

TVS DIODE 20.5VWM 33.2VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 20.5V
• Voltage - Breakdown (Min): 22.8V
• Voltage - Clamping (Max) @ Ipp: 33.2V
• Current - Peak Pulse (10/1000µs): 12A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

MSMLG70AE3

Microsemi Corporation

TVS DIODE 70VWM 113VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 26.6A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

paquet: DO-215AB, SMC Gull Wing

MSMBJ22A

Microsemi Corporation

TVS DIODE 22VWM 35.5VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 35.5V
• Current - Peak Pulse (10/1000µs): 16.9A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

paquet: DO-214AA, SMB