Produits Microsemi Corporation

APTGT400A120G

Microsemi Corporation

IGBT MOD TRENCH PHASE LEG SP6

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 560A
• Power - Max: 1785W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
• Current - Collector Cutoff (Max): 750µA
• Input Capacitance (Cies) @ Vce: 28nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Supplier Device Package: SP6

paquet: SP6

JAN2N6849

Microsemi Corporation

MOSFET P-CH 100V 6.5A TO-39

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 320 mOhm @ 6.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-39
• Package / Case: TO-205AF Metal Can

paquet: TO-205AF Metal Can

JANTXV1N4107DUR-1

Microsemi Corporation

DIODE ZENER 13V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 9.9V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

paquet: DO-213AA (Glass)

1N4731A G

Microsemi Corporation

DIODE ZENER 4.3V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

2EZ140D5

Microsemi Corporation

DIODE ZENER 140V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 140V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 500 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 106.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

JANTXV1N5522C-1

Microsemi Corporation

DIODE ZENER 4.7V 500MW DO35

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

paquet: DO-204AH, DO-35, Axial

JANTX1N3038BUR-1

Microsemi Corporation

DIODE ZENER 56V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 110 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)

paquet: DO-213AB, MELF (Glass)

JAN1N4965C

Microsemi Corporation

DIODE ZENER 20V 5W AXIAL

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 4.5 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: E, Axial

paquet: E, Axial

CDLL3037B

Microsemi Corporation

DIODE ZENER 51V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 38.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

paquet: DO-213AB, MELF

1N5372CE3/TR12

Microsemi Corporation

DIODE ZENER 62V 5W T18

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 42 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 44.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

paquet: T-18, Axial

3EZ20D/TR8

Microsemi Corporation

DIODE ZENER 20V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±20%
• Power - Max: 3W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

1N5934PE3/TR12

Microsemi Corporation

DIODE ZENER 24V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±20%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 19 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

1N5940E3/TR13

Microsemi Corporation

DIODE ZENER 43V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±20%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 53 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

APTDF450U60G

Microsemi Corporation

DIODE MODULE 600V 500A LP4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 500A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 115ns
• Current - Reverse Leakage @ Vr: 2.5mA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: LP4
• Supplier Device Package: LP4
• Operating Temperature - Junction: -

paquet: LP4

APT2X31DC120J

Microsemi Corporation

DIODE MODULE 1.2KV 30A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 600µA @ 1200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

paquet: SOT-227-4, miniBLOC

APT2X60D40J

Microsemi Corporation

DIODE MODULE 400V 60A ISOTOP

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 37ns
• Current - Reverse Leakage @ Vr: 250µA @ 400V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: ISOTOP?

paquet: SOT-227-4, miniBLOC

LX7165-03CSP-TR

Microsemi Corporation

IC REG BCK 0.97V 5A SYNC 20WLCSP

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Programmable (Fixed)
• Number of Outputs: 1
• Voltage - Input (Min): 3V
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.6V (0.97V)
• Voltage - Output (Max): 3.3V
• Current - Output: 5A
• Frequency - Switching: 1.875MHz
• Synchronous Rectifier: Yes
• Operating Temperature: 0°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-UFBGA, WLCSP
• Supplier Device Package: 20-WLCSP

paquet: 20-UFBGA, WLCSP

A2F500M3G-1PQ208

Microsemi Corporation

IC FPGA 500K GATES 512KB 208QFP

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DMA, POR, WDT
• Connectivity: Ethernet, I2C, SPI, UART/USART
• Speed: 100MHz
• Primary Attributes: ProASIC?3 FPGA, 500K Gates, 11520 D-Flip-Flops
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

paquet: 208-BFQFP

AGL600V5-CSG281I

Microsemi Corporation

IC FPGA 215 I/O 281CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 13824
• Total RAM Bits: 110592
• Number of I/O: 215
• Number of Gates: 600000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 281-TFBGA, CSBGA
• Supplier Device Package: 281-CSP (10x10)

paquet: 281-TFBGA, CSBGA

AGLE3000V2-FG896

Microsemi Corporation

IC FPGA 620 I/O 896FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 75264
• Total RAM Bits: 516096
• Number of I/O: 620
• Number of Gates: 3000000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 896-BGA
• Supplier Device Package: 896-FBGA (31x31)

paquet: 896-BGA

A54SX16A-2TQ100I

Microsemi Corporation

IC FPGA 81 I/O 100TQFP

• Number of LABs/CLBs: 1452
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 81
• Number of Gates: 24000
• Voltage - Supply: 2.25 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

paquet: 100-LQFP

MART100KP85AE3

Microsemi Corporation

TVS DIODE 85VWM 166VC CASE5A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 166V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 100000W (100kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

paquet: DO-204AR, Axial

MAP4KE56CAE3

Microsemi Corporation

TVS DIODE 47.8VWM 77VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 47.8V
• Voltage - Breakdown (Min): 53.2V
• Voltage - Clamping (Max) @ Ipp: 77V
• Current - Peak Pulse (10/1000µs): 5.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

MXLSMCGLCE33AE3

Microsemi Corporation

TVS DIODE 33VWM 53.3VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 28.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

paquet: DO-215AB, SMC Gull Wing

MX15KP110A

Microsemi Corporation

TVS DIODE 110VWM 178VC CASE5A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 178V
• Current - Peak Pulse (10/1000µs): 84A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

paquet: DO-204AR, Axial

MXLSMCJ51CAE3

Microsemi Corporation

TVS DIODE 51VWM 82.4VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 18.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

paquet: DO-214AB, SMC

MXL1.5KE12CAE3

Microsemi Corporation

TVS DIODE 10.22VWM 16.7VC CASE1

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10.22V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.7V
• Current - Peak Pulse (10/1000µs): 90A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

paquet: DO-201AA, DO-27, Axial

APT50M80B2VRG

Microsemi Corporation

MOSFET N-CH 500V 58A T-MAX

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500 V
• Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 423 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8797 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 80mOhm @ 29A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: T-MAX™ [B2]
• Package / Case: TO-247-3 Variant

paquet: -

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