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Micro Commercial Co |
DIODE SCHOTTKY 50V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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paquet: DO-214AB, SMC |
Stock3 728 |
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Micro Commercial Co |
DIODE GEN PURP 1KV 1A SOD123FL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -65°C ~ 150°C
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paquet: SOD-123F |
Stock25 734 |
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Micro Commercial Co |
DIODE GEN PURP 200V 1A SOD123FL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -65°C ~ 175°C
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paquet: SOD-123F |
Stock1 224 360 |
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Micro Commercial Co |
DIODE GEN 75V 150MA MINI MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: Mini MELF
- Operating Temperature - Junction: 200°C (Max)
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paquet: DO-213AC, MINI-MELF, SOD-80 |
Stock118 926 |
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Micro Commercial Co |
TVS DIODE 132VWM 213VC R6
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 132V
- Voltage - Breakdown (Min): 147.4V
- Voltage - Clamping (Max) @ Ipp: 213V
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: 30000W (30kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: R6, Axial
- Supplier Device Package: R-6
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paquet: R6, Axial |
Stock3 582 |
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Micro Commercial Co |
TVS DIODE 36VWM 58.1VC SMC
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 36V
- Voltage - Breakdown (Min): 40V
- Voltage - Clamping (Max) @ Ipp: 58.1V
- Current - Peak Pulse (10/1000µs): 25.9A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
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paquet: DO-214AB, SMC |
Stock26 262 |
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Micro Commercial Co |
TVS DIODE 70VWM 113VC SMA
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 70V
- Voltage - Breakdown (Min): 77.8V
- Voltage - Clamping (Max) @ Ipp: 113V
- Current - Peak Pulse (10/1000µs): 3.5A
- Power - Peak Pulse: 400W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TA)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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paquet: DO-214AC, SMA |
Stock6 192 |
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Micro Commercial Co |
Interface
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50 V
- Current - Average Rectified (Io): 20 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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paquet: - |
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Micro Commercial Co |
Interface
- Voltage - Zener (Nom) (Vz): 47 V
- Tolerance: ±5%
- Power - Max: 3 W
- Impedance (Max) (Zzt): 67 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 35.8 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
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paquet: - |
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Micro Commercial Co |
N-CHANNEL MOSFET,TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1807 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 34W
- Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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paquet: - |
Stock14 727 |
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Micro Commercial Co |
Interface
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.25W
- Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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paquet: - |
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Micro Commercial Co |
DIODE GEN PURP 1KV 50A RA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 300pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: RA
- Supplier Device Package: RA
- Operating Temperature - Junction: -55°C ~ 150°C
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paquet: - |
Request a Quote |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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paquet: - |
Request a Quote |
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Micro Commercial Co |
DIODE
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 3 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: TBSL
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paquet: - |
Request a Quote |
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Micro Commercial Co |
DIODE GEN PURP 100V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (HSMA)
- Operating Temperature - Junction: -50°C ~ 150°C
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paquet: - |
Request a Quote |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: 17pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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paquet: - |
Request a Quote |
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Micro Commercial Co |
DIODE ZENER 68V 1W DO214AC
- Voltage - Zener (Nom) (Vz): 68 V
- Tolerance: ±5%
- Power - Max: 1 W
- Impedance (Max) (Zzt): 150 Ohms
- Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
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paquet: - |
Request a Quote |
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Micro Commercial Co |
DIODE BRIDGE 4A JB
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100 V
- Current - Average Rectified (Io): 4 A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: 4-SIP, JB
- Supplier Device Package: JB
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paquet: - |
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Micro Commercial Co |
RECTIFIERS
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 650 V
- Capacitance @ Vr, F: 170pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: - |
Request a Quote |
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Micro Commercial Co |
DIODE GEN PURP 800V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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paquet: - |
Request a Quote |
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Micro Commercial Co |
350MW ZENER SOT-23
- Voltage - Zener (Nom) (Vz): 9.1 V
- Tolerance: ±5%
- Power - Max: 350 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 6 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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paquet: - |
Stock15 657 |
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Micro Commercial Co |
DIODE GEN PURP 300V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 300 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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paquet: - |
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Micro Commercial Co |
Interface
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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paquet: - |
Request a Quote |
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Micro Commercial Co |
P-CHANNEL MOSFET, DFN5060
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 120W (Tj)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060
- Package / Case: 8-PowerTDFN
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paquet: - |
Stock29 850 |
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Micro Commercial Co |
MOSFET N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W
- Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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paquet: - |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -65°C ~ 150°C
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paquet: - |
Request a Quote |
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Micro Commercial Co |
Interface
- Voltage - Zener (Nom) (Vz): 75 V
- Tolerance: ±5%
- Power - Max: 3 W
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 56 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
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paquet: - |
Request a Quote |
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Micro Commercial Co |
SCHOTTKY BARRIER RECTIFIERS 100V
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: - |
Stock29 940 |
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