Produits IXYS

IXBH9N160G

IXYS

IGBT 1600V 9A 100W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1600V
• Current - Collector (Ic) (Max): 9A
• Current - Collector Pulsed (Icm): 10A
• Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 5A
• Power - Max: 100W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 34nC
• Td (on/off) @ 25°C: -
• Test Condition: 960V, 5A, 27 Ohm, 10V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXBH)

paquet: TO-247-3

MIO1200-25E10

IXYS

MOD IGBT SGL SWITCH 2500V E10

• IGBT Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 1200A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 1200A
• Current - Collector Cutoff (Max): 120mA
• Input Capacitance (Cies) @ Vce: 186nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E10
• Supplier Device Package: E10

paquet: E10

MIXA450PF1200TSF

IXYS

IGBT MODULE 1200V 450A

• IGBT Type: PT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 650A
• Power - Max: 2100W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

paquet: Module

IXTH200N085T

IXYS

MOSFET N-CH 85V 200A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 85V
• Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

paquet: TO-247-3

IXFL38N100P

IXYS

MOSFET N-CH 1000V 29A I5-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUSi5-Pak?
• Package / Case: ISOPLUSi5-Pak?

paquet: ISOPLUSi5-Pak?

IXFN64N50PD3

IXYS

MOSFET N-CH 500V 52A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 52A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 625W (Tc)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

paquet: SOT-227-4, miniBLOC

IXFP8N50P3

IXYS

MOSFET N-CH 500V 8A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 180W (Tc)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

paquet: TO-220-3

IXFH80N25X3

IXYS

MOSFET N-CH 250V 80A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 390W (Tc)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXFH)
• Package / Case: TO-247-3

paquet: TO-247-3

IXFH6N100F

IXYS

MOSFET N-CH 1KV 6A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 180W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXFH)
• Package / Case: TO-247-3

paquet: TO-247-3

IXTA8N65X2

IXYS

MOSFET N-CH 650V 8A X2 TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTQ26N50P

IXYS

MOSFET N-CH 500V 26A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

paquet: TO-3P-3, SC-65-3

IXFP6N120P

IXYS

MOSFET N-CH 1200V 6A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

paquet: TO-220-3

IXTY08N100D2

IXYS

MOSFET N-CH 1000V 800MA DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 21 Ohm @ 400mA, 0V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

IXTA76P10T

IXYS

MOSFET P-CH 100V 76A TO-263

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 298W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GWM120-0075P3

IXYS

MOSFET 6N-CH 75V 118A ISOPLUS

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 118A
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: ISOPLUS-DIL?
• Supplier Device Package: ISOPLUS-DIL?

paquet: ISOPLUS-DIL?

MCD200-18IO1

IXYS

MOD THYRISTOR/DIODE 1800V Y4-M6

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1800V
• Current - On State (It (AV)) (Max): 216A
• Current - On State (It (RMS)) (Max): 340A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8600A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y4-M6

paquet: Y4-M6

VCC2X105-14IO7

IXYS

MOD THYRISTOR DUAL 1400V ECOPAC2

• Structure: Independent - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 105A
• Current - On State (It (RMS)) (Max): 180A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2

paquet: ECO-PAC2

VCD105-08IO7

IXYS

MOD THYRISTOR 800V 105A ECO-PAC2

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 105A
• Current - On State (It (RMS)) (Max): 180A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2

paquet: ECO-PAC2

MDD172-14N1

IXYS

DIODE MODULE 1.4KV 190A Y4-M6

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io) (per Diode): 190A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 300A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1400V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Y4-M6
• Supplier Device Package: Y4-M6

paquet: Y4-M6

DSA20C60PN

IXYS

DIODE ARRAY SCHOTTKY 60V TO220FP

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 60V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: TO-220ABFP

paquet: TO-220-3 Full Pack, Isolated Tab

DSEI2X31-12B

IXYS

DIODE MODULE 1.2KV 28A SOT227B

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 28A
• Voltage - Forward (Vf) (Max) @ If: 2.55V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 750µA @ 1200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

paquet: SOT-227-4, miniBLOC

VUO55-18NO7

IXYS

RECT BRIDGE 3PH 58A 1800V PWS-B

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1800V
• Current - Average Rectified (Io): 58A
• Voltage - Forward (Vf) (Max) @ If: 1.03V @ 20A
• Current - Reverse Leakage @ Vr: 100µA @ 1800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-B
• Supplier Device Package: PWS-B

paquet: PWS-B

VUB72-16NOXT

IXYS

DIODE BRIDGE 1600V 75A

• Diode Type: Three Phase (Braking)
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 75A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Current - Reverse Leakage @ Vr: 20µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1A-PAK
• Supplier Device Package: V1A-PAK

paquet: V1A-PAK

VBO65-08NO7

IXYS

DIODE BRIDGE 800V 65A FO-T-A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 65A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
• Current - Reverse Leakage @ Vr: 500µA @ 800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A
• Supplier Device Package: FO-T-A

paquet: FO-T-A

IXDD414SI

IXYS

IC MOSFET DRVR 14A LOSIDE 14SOIC

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 14A, 14A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

paquet: 14-SOIC (0.154", 3.90mm Width)

IXCY10M35S

IXYS

IC CURRENT REGULATOR DPAK

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: -
• Current - Output: 10mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

DHG10IM1800UZ-TRL

IXYS

DIODE GEN PURP 1.8KV 10A TO252AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 2.27 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 260 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
• Capacitance @ Vr, F: 3pF @ 200V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

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R1448NC18J

IXYS

SCR 1.8KV W11

• Voltage - Off State: 1.8 kV
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): 1800 A
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1448A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -
• Mounting Type: Clamp On
• Package / Case: TO-200AC, K-PUK
• Supplier Device Package: W11

paquet: -

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