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IXYS |
IGBT 1200V 12A TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 12A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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paquet: TO-247-3 |
Stock2 976 |
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IXYS |
MODULE IGBT 18A 1200V ECO-PAC2
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 18A
- Power - Max: 90W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
- Current - Collector Cutoff (Max): 500µA
- Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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paquet: ECO-PAC2 |
Stock2 416 |
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IXYS |
MOSFET N-CH 200V 46A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 280W (Tc)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock6 000 |
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IXYS |
MOSFET N-CH 170V 210A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 170V
- Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1150W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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paquet: TO-264-3, TO-264AA |
Stock5 824 |
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IXYS |
MOSFET N-CH 500V 15A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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paquet: ISOPLUS220? |
Stock2 384 |
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IXYS |
MOSFET N-CH 100V 60A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock390 000 |
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IXYS |
MOSFET N-CH 250V 90A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 90A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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paquet: SOT-227-4, miniBLOC |
Stock5 120 |
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IXYS |
MOSFET N-CH 650V 34A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock6 352 |
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IXYS |
RECT BRIDGE 3PH 1600V FO-T-A
- Structure: Bridge, 3-Phase - All SCRs
- Number of SCRs, Diodes: 6 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 70A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
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paquet: FO-T-A |
Stock4 128 |
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IXYS |
MOD THYRISTOR 1600V 105A ECOPAC2
- Structure: Common Cathode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 105A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
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paquet: ECO-PAC2 |
Stock4 608 |
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IXYS |
MOD THYRISTOR DUAL 1400V WC-500
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 545A
- Current - On State (It (RMS)) (Max): 1294A
- Voltage - Gate Trigger (Vgt) (Max): 3V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
- Current - Hold (Ih) (Max): 1A
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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paquet: WC-500 |
Stock7 104 |
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IXYS |
MODULE AC CTLR 3PH 1400V PWS-F
- Structure: 3-Phase Controller - All SCRs
- Number of SCRs, Diodes: 6 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 37A
- Current - On State (It (RMS)) (Max): 59A
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1100A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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paquet: Module |
Stock2 352 |
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IXYS |
MOD THYRISTOR SGL 1600V SOT-227B
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 77A
- Current - On State (It (RMS)) (Max): 121A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1150A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
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paquet: SOT-227-4, miniBLOC |
Stock5 216 |
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IXYS |
DIODE MODULE 1.8KV 95A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io) (per Diode): 95A
- Voltage - Forward (Vf) (Max) @ If: 1.48V @ 200A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 1800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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paquet: TO-240AA |
Stock3 520 |
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IXYS |
DIODE MODULE 600V 30A SOT227B
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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paquet: SOT-227-4, miniBLOC |
Stock5 744 |
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IXYS |
IC MOD DIODE 3PHASE BRIDGE UGB3
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 7200V
- Current - Average Rectified (Io): 1.8A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: UGB-3
- Supplier Device Package: UGB-3
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paquet: UGB-3 |
Stock4 560 |
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IXYS |
RECT BRIDGE 3PH 85A 1200V FO-T-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
- Current - Reverse Leakage @ Vr: 500µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
- Supplier Device Package: FO-T-A
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paquet: FO-T-A |
Stock7 328 |
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IXYS |
RECT BRIDGE 3PH 54A 1200V V1-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 54A
- Voltage - Forward (Vf) (Max) @ If: 1.13V @ 20A
- Current - Reverse Leakage @ Vr: 40µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1-A
- Supplier Device Package: V1-A
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paquet: V1-A |
Stock7 168 |
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IXYS |
RECT BRIDG 3PH 127A 1600V PWS-E1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 127A
- Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
- Current - Reverse Leakage @ Vr: 100µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E1
- Supplier Device Package: PWS-E1
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paquet: PWS-E1 |
Stock5 680 |
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IXYS |
IC LED DRVR LIN DIM 32MA 16TQFN
- Type: Linear
- Topology: -
- Internal Switch(s): Yes
- Number of Outputs: 4
- Voltage - Supply (Min): 2.5V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: -
- Current - Output / Channel: 32mA
- Frequency: -
- Dimming: Analog, PWM
- Applications: Backlight
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-WFQFN Exposed Pad
- Supplier Device Package: 16-TQFN (3x3)
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paquet: 16-WFQFN Exposed Pad |
Stock2 352 |
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IXYS |
IC MOSFET DRVR LS 4A DUAL 16SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 16ns, 13ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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paquet: 16-SOIC (0.295", 7.50mm Width) |
Stock6 384 |
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IXYS |
IGBT 600V 40A TO-204AE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
- Power - Max: 150 W
- Switching Energy: 2mJ (on), 2mJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 100ns/600ns
- Test Condition: 480V, 20A, 82Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AE
- Supplier Device Package: TO-204AE
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paquet: - |
Request a Quote |
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IXYS |
IGBT 600V 60A 220W TO-263AA
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
- Power - Max: 220 W
- Switching Energy: 270µJ (on), 90µJ (off)
- Input Type: Standard
- Gate Charge: 38 nC
- Td (on/off) @ 25°C: 16ns/42ns
- Test Condition: 300V, 20A, 5Ohm, 15V
- Reverse Recovery Time (trr): 26 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
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paquet: - |
Request a Quote |
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IXYS |
DISC IGBT XPT-GENX3 TO-247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 600 A
- Current - Collector Pulsed (Icm): 1460 A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
- Power - Max: 2300 W
- Switching Energy: 7.8mJ (on), 4.7mJ (off)
- Input Type: Standard
- Gate Charge: 565 nC
- Td (on/off) @ 25°C: 42ns/190ns
- Test Condition: 400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): 125 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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paquet: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 6KV 5750A W112
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 6000 V
- Current - Average Rectified (Io): 5750A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 73 µs
- Current - Reverse Leakage @ Vr: 120 mA @ 6000 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: W112
- Operating Temperature - Junction: -40°C ~ 150°C
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paquet: - |
Request a Quote |
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IXYS |
MOSFET N-CH 90A TO264
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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paquet: - |
Request a Quote |
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IXYS |
DIODE MOD GP 600V 150A SOT227B
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io) (per Diode): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 3 mA @ 600 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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paquet: - |
Request a Quote |
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IXYS |
SCR 1.6KV 126A TO247
- Voltage - Off State: 1.6 kV
- Voltage - Gate Trigger (Vgt) (Max): 1.4 V
- Current - Gate Trigger (Igt) (Max): 80 mA
- Voltage - On State (Vtm) (Max): 1.47 V
- Current - On State (It (AV)) (Max): 80 A
- Current - On State (It (RMS)) (Max): 126 A
- Current - Hold (Ih) (Max): 100 mA
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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paquet: - |
Stock15 |
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