Page 4 - Produits IXYS | Heisener Electronics

Référence	Fabricant	Description	paquet	Stock
MMIX1Y100N120C3H1	IXYS	IGBT 1200V 92A 400W SMPD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 92A Current - Collector Pulsed (Icm): 440A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Power - Max: 400W Switching Energy: 6.5mJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 270nC Td (on/off) @ 25°C: 48ns/123ns Test Condition: 600V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): 420ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-PowerSMD, 21 Leads Supplier Device Package: SMPD	paquet: 24-PowerSMD, 21 Leads	Stock3 536
IXGF32N170	IXYS	IGBT 1700V 44A 200W I4PAC IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 44A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A Power - Max: 200W Switching Energy: 10.6mJ (off) Input Type: Standard Gate Charge: 146nC Td (on/off) @ 25°C: 45ns/270ns Test Condition: 1020V, 32A, 2.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	paquet: i4-Pac?-5 (3 leads)	Stock3 616
MID400-12E4	IXYS	MOD IGBT RBSOA 1200V 425A Y3-LI IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 420A Power - Max: 1700W Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A Current - Collector Cutoff (Max): 3.3mA Input Capacitance (Cies) @ Vce: 17nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-Li Supplier Device Package: Y3-Li	paquet: Y3-Li	Stock3 536
IXFK20N120P	IXYS	MOSFET N-CH 1200V 20A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	paquet: TO-264-3, TO-264AA	Stock7 312
IXFT10N100	IXYS	MOSFET N-CH 1000V 10A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock6 000
IXTY1N80	IXYS	MOSFET N-CH 800V 750MA TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 750mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7 616
IXFP12N50PM	IXYS	MOSFET N-CH 500V 6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	paquet: TO-220-3	Stock7 344
IXTY32P05T	IXYS	MOSFET P-CH 50V 32A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2 032
IXFX160N30T	IXYS	MOSFET N-CH 300V 160A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1390W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	paquet: TO-247-3	Stock6 800
IXTQ130N10T	IXYS	MOSFET N-CH 100V 130A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	paquet: TO-3P-3, SC-65-3	Stock424 500
IXFH26N50P	IXYS	MOSFET N-CH 500V 26A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	paquet: TO-247-3	Stock12 984
VCK105-14IO7	IXYS	MOD THYRISTOR 1400V 105A ECOPAC2 Structure: Common Cathode - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 105A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2	paquet: ECO-PAC2	Stock2 112
MCC72-14IO1B	IXYS	MOD THYRISTOR DUAL 1400V TO240AA Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 115A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	paquet: TO-240AA	Stock6 400
MCC72-12IO8B	IXYS	MOD THYRISTOR DUAL 1200V TO240AA Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 115A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	paquet: TO-240AA	Stock4 000
MCD26-14IO8B	IXYS	MOD THYRISTOR/DIO 1400V TO-240AA Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 32A Current - On State (It (RMS)) (Max): 50A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	paquet: TO-240AA	Stock2 816
DSEP60-06A	IXYS	DIODE GEN PURP 600V 60A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 650µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-247-2	Stock5 488
MDD142-12N1	IXYS	DIODE MODULE 1.2KV 165A Y4-M6 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 165A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 1200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y4-M6 Supplier Device Package: Y4-M6	paquet: Y4-M6	Stock4 592
DSB30C60PB	IXYS	DIODE ARRAY SCHOTTKY 60V TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 780mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 60V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	paquet: TO-220-3	Stock3 456
IXDN402PI	IXYS	IC MOSFET DRVR DUAL 2A 8-DIP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 8ns, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	paquet: 8-DIP (0.300", 7.62mm)	Stock3 120
KXOB22-01X8F	IXYS	MONO SOLAR CELL 22MM X 7MM Power (Watts) - Max: - Current @ Pmpp: 3.8mA Voltage @ Pmpp: 3.4V Current Short Circuit (Isc): 4.4mA Type: Monocrystalline Voltage - Open Circuit: 4.7V Operating Temperature: - Package / Case: Cell (8) Size / Dimension: 0.866" L x 0.276" W x 0.074" H (22.00mm x 7.00mm x 1.80mm)	paquet: Cell (8)	Stock31 998
IXFT28N50F	IXYS	MOSFET N-CH 28A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	paquet: -	Request a Quote
IXGP48N60A3	IXYS	IGBT PT 600V 120A TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 120 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A Power - Max: 300 W Switching Energy: 950µJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 110 nC Td (on/off) @ 25°C: 25ns/334ns Test Condition: 480V, 32A, 5Ohm, 15V Reverse Recovery Time (trr): 30 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	paquet: -	Stock39
DSA15IM150UC-TRL	IXYS	DIODE SCHOTTKY 150V 15A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 150 V Capacitance @ Vr, F: 82pF @ 24V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Request a Quote
IXFX210N30X3	IXYS	MOSFET N-CH 300V 210A PLUS247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3 Variant	paquet: -	Request a Quote
MTC120W55GC-SMD	IXYS	MOSFET 6N-CH 55V 150A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote
N6012ZD060	IXYS	SCR 600V 11795A W46 Voltage - Off State: 600 V Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 1.45 V Current - On State (It (AV)) (Max): 6012 A Current - On State (It (RMS)) (Max): 11795 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 140°C Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W46	paquet: -	Request a Quote
IXXA50N60B3	IXYS	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 120 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A Power - Max: 600 W Switching Energy: 670µJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 70 nC Td (on/off) @ 25°C: 27ns/150ns Test Condition: 360V, 36A, 5Ohm, 15V Reverse Recovery Time (trr): 40 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA	paquet: -	Request a Quote
CLA40MT1200NPZ-TRL	IXYS	TRIAC 1.2KV 44A TO263HV Triac Type: Standard Voltage - Off State: 1.2 kV Current - On State (It (RMS)) (Max): 44 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A Current - Gate Trigger (Igt) (Max): 40 mA Current - Hold (Ih) (Max): 50 mA Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV	paquet: -	Request a Quote

MMIX1Y100N120C3H1

IXYS

IGBT 1200V 92A 400W SMPD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 92A
Current - Collector Pulsed (Icm): 440A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Power - Max: 400W
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Input Type: Standard
Gate Charge: 270nC
Td (on/off) @ 25°C: 48ns/123ns
Test Condition: 600V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr): 420ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Supplier Device Package: SMPD

paquet: 24-PowerSMD, 21 Leads

Stock3 536

IXGF32N170

IXYS

IGBT 1700V 44A 200W I4PAC

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 44A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A
Power - Max: 200W
Switching Energy: 10.6mJ (off)
Input Type: Standard
Gate Charge: 146nC
Td (on/off) @ 25°C: 45ns/270ns
Test Condition: 1020V, 32A, 2.7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5 (3 leads)
Supplier Device Package: ISOPLUS i4-PAC?

paquet: i4-Pac?-5 (3 leads)

Stock3 616

MID400-12E4

IXYS

MOD IGBT RBSOA 1200V 425A Y3-LI

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 420A
Power - Max: 1700W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
Current - Collector Cutoff (Max): 3.3mA
Input Capacitance (Cies) @ Vce: 17nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Supplier Device Package: Y3-Li

paquet: Y3-Li

Stock3 536

IXFK20N120P

IXYS

MOSFET N-CH 1200V 20A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

paquet: TO-264-3, TO-264AA

Stock7 312

IXFT10N100

IXYS

MOSFET N-CH 1000V 10A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock6 000

IXTY1N80

IXYS

MOSFET N-CH 800V 750MA TO-252AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7 616

IXFP12N50PM

IXYS

MOSFET N-CH 500V 6A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

paquet: TO-220-3

Stock7 344

IXTY32P05T

IXYS

MOSFET P-CH 50V 32A TO-252

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 39 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2 032

IXFX160N30T

IXYS

MOSFET N-CH 300V 160A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1390W (Tc)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

paquet: TO-247-3

Stock6 800

IXTQ130N10T

IXYS

MOSFET N-CH 100V 130A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

paquet: TO-3P-3, SC-65-3

Stock424 500

IXFH26N50P

IXYS

MOSFET N-CH 500V 26A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

paquet: TO-247-3

Stock12 984

VCK105-14IO7

IXYS

MOD THYRISTOR 1400V 105A ECOPAC2

Structure: Common Cathode - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 105A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2

paquet: ECO-PAC2

Stock2 112

MCC72-14IO1B

IXYS

MOD THYRISTOR DUAL 1400V TO240AA

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 115A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

paquet: TO-240AA

Stock6 400

MCC72-12IO8B

IXYS

MOD THYRISTOR DUAL 1200V TO240AA

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 115A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

paquet: TO-240AA

Stock4 000

MCD26-14IO8B

IXYS

MOD THYRISTOR/DIO 1400V TO-240AA

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 32A
Current - On State (It (RMS)) (Max): 50A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

paquet: TO-240AA

Stock2 816

DSEP60-06A

IXYS

DIODE GEN PURP 600V 60A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 650µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-247-2

Stock5 488

MDD142-12N1

IXYS

DIODE MODULE 1.2KV 165A Y4-M6

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 165A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 1200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Supplier Device Package: Y4-M6

paquet: Y4-M6

Stock4 592

DSB30C60PB

IXYS

DIODE ARRAY SCHOTTKY 60V TO220AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 780mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 60V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

paquet: TO-220-3

Stock3 456

IXDN402PI

IXYS

IC MOSFET DRVR DUAL 2A 8-DIP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 8ns, 8ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

paquet: 8-DIP (0.300", 7.62mm)

Stock3 120

KXOB22-01X8F

IXYS

MONO SOLAR CELL 22MM X 7MM

Power (Watts) - Max: -
Current @ Pmpp: 3.8mA
Voltage @ Pmpp: 3.4V
Current Short Circuit (Isc): 4.4mA
Type: Monocrystalline
Voltage - Open Circuit: 4.7V
Operating Temperature: -
Package / Case: Cell (8)
Size / Dimension: 0.866" L x 0.276" W x 0.074" H (22.00mm x 7.00mm x 1.80mm)

paquet: Cell (8)

Stock31 998

IXFT28N50F

IXYS

MOSFET N-CH 28A TO268

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

paquet: -

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IXGP48N60A3

IXYS

IGBT PT 600V 120A TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Power - Max: 300 W
Switching Energy: 950µJ (on), 2.9mJ (off)
Input Type: Standard
Gate Charge: 110 nC
Td (on/off) @ 25°C: 25ns/334ns
Test Condition: 480V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr): 30 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

paquet: -

Stock39

DSA15IM150UC-TRL

IXYS

DIODE SCHOTTKY 150V 15A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Capacitance @ Vr, F: 82pF @ 24V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

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IXFX210N30X3

IXYS

MOSFET N-CH 300V 210A PLUS247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3 Variant

paquet: -

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MTC120W55GC-SMD

IXYS

MOSFET 6N-CH 55V 150A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

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N6012ZD060

IXYS

SCR 600V 11795A W46

Voltage - Off State: 600 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 1.45 V
Current - On State (It (AV)) (Max): 6012 A
Current - On State (It (RMS)) (Max): 11795 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Supplier Device Package: W46

paquet: -

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IXXA50N60B3

IXYS

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Power - Max: 600 W
Switching Energy: 670µJ (on), 1.2mJ (off)
Input Type: Standard
Gate Charge: 70 nC
Td (on/off) @ 25°C: 27ns/150ns
Test Condition: 360V, 36A, 5Ohm, 15V
Reverse Recovery Time (trr): 40 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AA

paquet: -

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CLA40MT1200NPZ-TRL

IXYS

TRIAC 1.2KV 44A TO263HV

Triac Type: Standard
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 44 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Hold (Ih) (Max): 50 mA
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV

paquet: -

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