Page 23 - Produits IXYS | Heisener Electronics

Référence	Fabricant	Description	paquet	Stock
IXGK28N140B3H1	IXYS	IGBT 1400V 60A 300W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1400V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A Power - Max: 300W Switching Energy: 3.6mJ (on), 3.9mJ (off) Input Type: Standard Gate Charge: 88nC Td (on/off) @ 25°C: 16ns/190ns Test Condition: 960V, 28A, 5 Ohm, 15V Reverse Recovery Time (trr): 350ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXGK)	paquet: TO-264-3, TO-264AA	Stock2 032
IXFT14N100	IXYS	MOSFET N-CH 1000V 14A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4 336
IXFX32N50	IXYS	MOSFET N-CH 500V 32A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	paquet: TO-247-3	Stock118 140
IXKP24N60C5	IXYS	MOSFET N-CH 600V 24A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	paquet: TO-220-3	Stock3 760
IXTQ96N25T	IXYS	MOSFET N-CH 250V 96A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	paquet: TO-3P-3, SC-65-3	Stock390 000
IXFH102N15T	IXYS	MOSFET N-CH 150V 102A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	paquet: TO-247-3	Stock4 592
IXFA20N50P3	IXYS	MOSFET N-CH 500V 20A TO-263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2 320
IXTA48P05T	IXYS	MOSFET P-CH 50V 48A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5 520
IXFX180N25T	IXYS	MOSFET N-CH 250V 180A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1390W (Tc) Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	paquet: TO-247-3	Stock7 120
CLA40MT1200NPZ	IXYS	THYRISTOR PHASE THRU TO263 Triac Type: Standard Voltage - Off State: 1200V (1.2kV) Current - On State (It (RMS)) (Max): 44A Voltage - Gate Trigger (Vgt) (Max): 1.3V Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A Current - Gate Trigger (Igt) (Max): 40mA Current - Hold (Ih) (Max): 50mA Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak-HV)	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7 584
MCC56-08IO8B	IXYS	MOD THYRISTOR DUAL 800V TO-240AA Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 800V Current - On State (It (AV)) (Max): 64A Current - On State (It (RMS)) (Max): 100A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	paquet: TO-240AA	Stock2 800
MCC56-16IO1B	IXYS	MOD THYRISTOR DUAL 1600V TO240AA Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 64A Current - On State (It (RMS)) (Max): 100A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	paquet: TO-240AA	Stock5 152
MCC312-16IO1	IXYS	SCR DUAL 1600V 520A Y1-CU Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 320A Current - On State (It (RMS)) (Max): 520A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Y1-CU	paquet: Y1-CU	Stock5 392
DSS16-01AS-TUB	IXYS	DIODE SCHOTTKY 100V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 790mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6 192
DGSK40-018A	IXYS	DIODE ARRAY SCHOTTKY 180V TO220 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io) (per Diode): 23A Voltage - Forward (Vf) (Max) @ If: 1V @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 180V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	paquet: TO-220-3	Stock7 024
DSEE29-12CC	IXYS	DIODE ARRAY 600V 30A ISOPLUS220 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 1.62V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 500µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220?	paquet: ISOPLUS220?	Stock3 808
DSSK50-01A	IXYS	DIODE ARRAY SCHOTTKY 100V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 25A Voltage - Forward (Vf) (Max) @ If: 800mV @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	paquet: TO-3P-3 Full Pack	Stock6 640
IXDF504PI	IXYS	IC GATE DRIVER 4A 8-DIP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 9ns, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	paquet: 8-DIP (0.300", 7.62mm)	Stock25 440
DVRFD630-375/475	IXYS	IXRFD630 DE-375/DE-475 DEV BOARD Type: MOSFET Driver Frequency: - For Use With/Related Products: IXRFD630 Supplied Contents: Board	paquet: -	Stock4 752
N1802NC160	IXYS	SCR 1.6KV 3592A W11 Voltage - Off State: 1.6 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 1.29 V Current - On State (It (AV)) (Max): 1802 A Current - On State (It (RMS)) (Max): 3592 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 32500A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: TO-200AC, K-PUK Supplier Device Package: W11	paquet: -	Request a Quote
QJ8035NH4TP	IXYS	TRIAC ALTERNISTOR 800V 35A TO263 Triac Type: Alternistor - Snubberless Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 35 A Voltage - Gate Trigger (Vgt) (Max): 1 V Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A Current - Gate Trigger (Igt) (Max): 35 mA Current - Hold (Ih) (Max): 60 mA Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	paquet: -	Stock3 000
R0633YC12E	IXYS	SCR 1.2KV 1268A W58 Voltage - Off State: 1.2 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 200 mA Voltage - On State (Vtm) (Max): 1.85 V Current - On State (It (AV)) (Max): 633 A Current - On State (It (RMS)) (Max): 1268 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 60 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6900A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AB, B-PuK Supplier Device Package: W58	paquet: -	Request a Quote
IXTA3N150HV-TRL	IXYS	MOSFET N-CH 1500V 3A TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	paquet: -	Request a Quote
MCNA75P2200TA	IXYS	BIPOLAR MODULE - THYRISTOR TO-2 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 2.2 kV Current - On State (It (AV)) (Max): 75 A Current - On State (It (RMS)) (Max): 118 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - Gate Trigger (Igt) (Max): 95 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A Current - Hold (Ih) (Max): 200 mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	paquet: -	Request a Quote
IXTA64N10L2-TRL	IXYS	MOSFET N-CH 100V 64A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	paquet: -	Request a Quote
IXTA32P20T-TRL	IXYS	MOSFET P-CH 200V 32A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	paquet: -	Request a Quote
IXYH40N120C4	IXYS	IGBT DISCRETE TO-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 120 A Current - Collector Pulsed (Icm): 230 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Power - Max: 680 W Switching Energy: 5.55mJ (on), 1.55mJ (off) Input Type: Standard Gate Charge: 92 nC Td (on/off) @ 25°C: 21ns/140ns Test Condition: 960V, 32A, 5Ohm, 15V Reverse Recovery Time (trr): 55 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	paquet: -	Request a Quote
DSEP6-06AS-TUB	IXYS	DIODE GEN PURP 600V 6A TO252AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.03 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: 5pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Request a Quote

IXGK28N140B3H1

IXYS

IGBT 1400V 60A 300W TO264

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1400V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Power - Max: 300W
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Input Type: Standard
Gate Charge: 88nC
Td (on/off) @ 25°C: 16ns/190ns
Test Condition: 960V, 28A, 5 Ohm, 15V
Reverse Recovery Time (trr): 350ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXGK)

paquet: TO-264-3, TO-264AA

Stock2 032

IXFT14N100

IXYS

MOSFET N-CH 1000V 14A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4 336

IXFX32N50

IXYS

MOSFET N-CH 500V 32A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5450pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

paquet: TO-247-3

Stock118 140

IXKP24N60C5

IXYS

MOSFET N-CH 600V 24A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

paquet: TO-220-3

Stock3 760

IXTQ96N25T

IXYS

MOSFET N-CH 250V 96A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 29 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

paquet: TO-3P-3, SC-65-3

Stock390 000

IXFH102N15T

IXYS

MOSFET N-CH 150V 102A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 455W (Tc)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

paquet: TO-247-3

Stock4 592

IXFA20N50P3

IXYS

MOSFET N-CH 500V 20A TO-263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXFA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2 320

IXTA48P05T

IXYS

MOSFET P-CH 50V 48A TO-263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 24A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5 520

IXFX180N25T

IXYS

MOSFET N-CH 250V 180A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1390W (Tc)
Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

paquet: TO-247-3

Stock7 120

CLA40MT1200NPZ

IXYS

THYRISTOR PHASE THRU TO263

Triac Type: Standard
Voltage - Off State: 1200V (1.2kV)
Current - On State (It (RMS)) (Max): 44A
Voltage - Gate Trigger (Vgt) (Max): 1.3V
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
Current - Gate Trigger (Igt) (Max): 40mA
Current - Hold (Ih) (Max): 50mA
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak-HV)

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7 584

MCC56-08IO8B

IXYS

MOD THYRISTOR DUAL 800V TO-240AA

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 800V
Current - On State (It (AV)) (Max): 64A
Current - On State (It (RMS)) (Max): 100A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

paquet: TO-240AA

Stock2 800

MCC56-16IO1B

IXYS

MOD THYRISTOR DUAL 1600V TO240AA

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 64A
Current - On State (It (RMS)) (Max): 100A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

paquet: TO-240AA

Stock5 152

MCC312-16IO1

IXYS

SCR DUAL 1600V 520A Y1-CU

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 320A
Current - On State (It (RMS)) (Max): 520A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
Current - Hold (Ih) (Max): 150mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y1-CU

paquet: Y1-CU

Stock5 392

DSS16-01AS-TUB

IXYS

DIODE SCHOTTKY 100V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6 192

DGSK40-018A

IXYS

DIODE ARRAY SCHOTTKY 180V TO220

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 180V
Current - Average Rectified (Io) (per Diode): 23A
Voltage - Forward (Vf) (Max) @ If: 1V @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 180V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

paquet: TO-220-3

Stock7 024

DSEE29-12CC

IXYS

DIODE ARRAY 600V 30A ISOPLUS220

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 1.62V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 500µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?

paquet: ISOPLUS220?

Stock3 808

DSSK50-01A

IXYS

DIODE ARRAY SCHOTTKY 100V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 25A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD

paquet: TO-3P-3 Full Pack

Stock6 640

IXDF504PI

IXYS

IC GATE DRIVER 4A 8-DIP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 30 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 9ns, 8ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

paquet: 8-DIP (0.300", 7.62mm)

Stock25 440

DVRFD630-375/475

IXYS

IXRFD630 DE-375/DE-475 DEV BOARD

Type: MOSFET Driver
Frequency: -
For Use With/Related Products: IXRFD630
Supplied Contents: Board

paquet: -

Stock4 752

N1802NC160

IXYS

SCR 1.6KV 3592A W11

Voltage - Off State: 1.6 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 1.29 V
Current - On State (It (AV)) (Max): 1802 A
Current - On State (It (RMS)) (Max): 3592 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 32500A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC, K-PUK
Supplier Device Package: W11

paquet: -

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QJ8035NH4TP

IXYS

TRIAC ALTERNISTOR 800V 35A TO263

Triac Type: Alternistor - Snubberless
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 60 mA
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)

paquet: -

Stock3 000

R0633YC12E

IXYS

SCR 1.2KV 1268A W58

Voltage - Off State: 1.2 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 200 mA
Voltage - On State (Vtm) (Max): 1.85 V
Current - On State (It (AV)) (Max): 633 A
Current - On State (It (RMS)) (Max): 1268 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6900A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Supplier Device Package: W58

paquet: -

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IXTA3N150HV-TRL

IXYS

MOSFET N-CH 1500V 3A TO263HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1500 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263HV
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

paquet: -

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MCNA75P2200TA

IXYS

BIPOLAR MODULE - THYRISTOR TO-2

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 2.2 kV
Current - On State (It (AV)) (Max): 75 A
Current - On State (It (RMS)) (Max): 118 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

paquet: -

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IXTA64N10L2-TRL

IXYS

MOSFET N-CH 100V 64A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

paquet: -

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IXTA32P20T-TRL

IXYS

MOSFET P-CH 200V 32A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

paquet: -

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IXYH40N120C4

IXYS

IGBT DISCRETE TO-247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 230 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Power - Max: 680 W
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Input Type: Standard
Gate Charge: 92 nC
Td (on/off) @ 25°C: 21ns/140ns
Test Condition: 960V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr): 55 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

paquet: -

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DSEP6-06AS-TUB

IXYS

DIODE GEN PURP 600V 6A TO252AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 2.03 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: 5pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

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