Page 168 - Produits IXYS | Heisener Electronics

Référence	Fabricant	Description	paquet	Stock
IXGP30N60C3C1	IXYS	IGBT 600V 60A 220W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 220W Switching Energy: 120µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 38nC Td (on/off) @ 25°C: 17ns/42ns Test Condition: 300V, 20A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	paquet: TO-220-3	Stock2 624
IXGN50N60B	IXYS	IGBT 75A 600V SOT-227B IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Power - Max: 300W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A Current - Collector Cutoff (Max): 200µA Input Capacitance (Cies) @ Vce: 4.1nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	paquet: SOT-227-4, miniBLOC	Stock2 256
MWI200-06A8	IXYS	TRANS 16BIT 3-PH 600V 115A IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 225A Power - Max: 675W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A Current - Collector Cutoff (Max): 1.8mA Input Capacitance (Cies) @ Vce: 9nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	paquet: E3	Stock3 888
IXFF24N100	IXYS	MOSFET N-CH 1000V 22A I4-PAC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 390 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5 (3 leads)	paquet: i4-Pac?-5 (3 leads)	Stock2 288
IXTK17N120L	IXYS	MOSFET N-CH 1200V 17A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 8.5A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	paquet: TO-264-3, TO-264AA	Stock7 728
IXTT75N10	IXYS	MOSFET N-CH 100V 75A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3 472
IXFP14N85XM	IXYS	MOSFET N-CH 8500V 14A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	paquet: TO-220-3 Full Pack	Stock5 952
FMM150-0075X2F	IXYS	MOSFET 2N-CH 75V 120A I4-PAC-5 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power - Max: 170W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	paquet: i4-Pac?-5	Stock3 328
MLO75-16IO1	IXYS	MODULE AC CTLR 1600V KAMM-MODUL Structure: 1-Phase Controller - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 39A Current - On State (It (RMS)) (Max): 62A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	paquet: Module	Stock3 408
MCD312-18IO1	IXYS	MOD THYRISTOR/DIODE 1800V Y1-CU Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1800V Current - On State (It (AV)) (Max): 320A Current - On State (It (RMS)) (Max): 520A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Y1-CU	paquet: Y1-CU	Stock5 968
VVZB120-16IO2	IXYS	3-PHASE BRIDGE RECT 1600V 120A Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 120A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 750A @ 50MHz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V2-PAK	paquet: V2-PAK	Stock2 704
MLO175-12IO7	IXYS	MODULE AC CONTROL 1200V ECO-PAC1 Structure: 1-Phase Controller - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 80A Current - On State (It (RMS)) (Max): 125A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	paquet: Module	Stock3 296
DSA300I45NA	IXYS	DIODE MODULE 45V 300A SOT227B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 840mV @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 45V Capacitance @ Vr, F: 16500pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B Operating Temperature - Junction: -	paquet: SOT-227-4, miniBLOC	Stock5 792
DSEI8-06AS	IXYS	DIODE FAST REC 600V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock93 600
DSAI35-12A	IXYS	DIODE AVALANCHE 1.2KV 49A DO203 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 49A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 180°C	paquet: DO-203AB, DO-5, Stud	Stock4 800
MDK950-20N1W	IXYS	DIODE MODULE 2KV 950A Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io) (per Diode): 950A Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 18µs Current - Reverse Leakage @ Vr: 50mA @ 2000V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	paquet: Module	Stock6 816
MDA950-20N1W	IXYS	DIODE MODULE 2KV 950A Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io) (per Diode): 950A Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 18µs Current - Reverse Leakage @ Vr: 50mA @ 2000V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	paquet: Module	Stock7 632
DSEI2X101-06P	IXYS	DIODE MODULE 600V 96A ECO-PAC2 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 96A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 3mA @ 600V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	paquet: ECO-PAC2	Stock4 320
VUO120-12NO2T	IXYS	DIODE BRIDGE 1200V 180A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 180A Voltage - Forward (Vf) (Max) @ If: 1.59V @ 150A Current - Reverse Leakage @ Vr: 100µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V2-PAK Supplier Device Package: V2-PAK	paquet: V2-PAK	Stock4 576
IXBOD2-56R	IXYS	THYRISTOR RADIAL Voltage - Breakover: 5600V Voltage - Off State: - Voltage - On State: - Current - Peak Pulse (8/20µs): - Current - Peak Pulse (10/1000µs): - Current - Hold (Ih): 20mA Number of Elements: 1 Capacitance: - Mounting Type: Through Hole Package / Case: Radial	paquet: Radial	Stock8 100
IXFA130N15X3TRL	IXYS	MOSFET N-CH 150V 130A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	paquet: -	Request a Quote
N2825TJ400	IXYS	SCR 4KV 5520A W81 Voltage - Off State: 4 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 3.37 V Current - On State (It (AV)) (Max): 2825 A Current - On State (It (RMS)) (Max): 5520 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W81	paquet: -	Request a Quote
QJ6025RH4TP	IXYS	TRIAC 600V 25A TO220 Triac Type: Standard Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 25 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A Current - Gate Trigger (Igt) (Max): 35 mA Current - Hold (Ih) (Max): 50 mA Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	paquet: -	Stock3 000
IXGM30N60	IXYS	IGBT 600V 50A 200W TO-204AE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 200 W Switching Energy: - Input Type: Standard Gate Charge: 180 nC Td (on/off) @ 25°C: 100ns/500ns Test Condition: - Reverse Recovery Time (trr): 200 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AE Supplier Device Package: TO-204AE	paquet: -	Request a Quote
DSEP12-12AZ-TUB	IXYS	DIODE GEN PURP 1.2KV 12A TO263HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: 5pF @ 600V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock12
DHG60U1200LB-TRR	IXYS	BIPOLAR MODULE-BRIDGE RECTIFIER Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 60 A Voltage - Forward (Vf) (Max) @ If: 2.92 V @ 60 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	paquet: -	Request a Quote
CMA30E1600PZ-TRL	IXYS	SCR 1.6KV 47A TO263 Voltage - Off State: 1.6 kV Voltage - Gate Trigger (Vgt) (Max): 1.3 V Current - Gate Trigger (Igt) (Max): 28 mA Voltage - On State (Vtm) (Max): 1.42 V Current - On State (It (AV)) (Max): 30 A Current - On State (It (RMS)) (Max): 47 A Current - Hold (Ih) (Max): 60 mA Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV	paquet: -	Request a Quote
IXFA130N15X3	IXYS	MOSFET N-CH 150V 130A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	paquet: -	Stock309

IXGP30N60C3C1

IXYS

IGBT 600V 60A 220W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Power - Max: 220W
Switching Energy: 120µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 38nC
Td (on/off) @ 25°C: 17ns/42ns
Test Condition: 300V, 20A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

paquet: TO-220-3

Stock2 624

IXGN50N60B

IXYS

IGBT 75A 600V SOT-227B

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Power - Max: 300W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Current - Collector Cutoff (Max): 200µA
Input Capacitance (Cies) @ Vce: 4.1nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

paquet: SOT-227-4, miniBLOC

Stock2 256

MWI200-06A8

IXYS

TRANS 16BIT 3-PH 600V 115A

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 225A
Power - Max: 675W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Current - Collector Cutoff (Max): 1.8mA
Input Capacitance (Cies) @ Vce: 9nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3

paquet: E3

Stock3 888

IXFF24N100

IXYS

MOSFET N-CH 1000V 22A I4-PAC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 390 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS i4-PAC?
Package / Case: i4-Pac?-5 (3 leads)

paquet: i4-Pac?-5 (3 leads)

Stock2 288

IXTK17N120L

IXYS

MOSFET N-CH 1200V 17A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 900 mOhm @ 8.5A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

paquet: TO-264-3, TO-264AA

Stock7 728

IXTT75N10

IXYS

MOSFET N-CH 100V 75A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3 472

IXFP14N85XM

IXYS

MOSFET N-CH 8500V 14A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 550 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3 Full Pack

paquet: TO-220-3 Full Pack

Stock5 952

FMM150-0075X2F

IXYS

MOSFET 2N-CH 75V 120A I4-PAC-5

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
Power - Max: 170W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

paquet: i4-Pac?-5

Stock3 328

MLO75-16IO1

IXYS

MODULE AC CTLR 1600V KAMM-MODUL

Structure: 1-Phase Controller - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 39A
Current - On State (It (RMS)) (Max): 62A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Current - Hold (Ih) (Max): 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

paquet: Module

Stock3 408

MCD312-18IO1

IXYS

MOD THYRISTOR/DIODE 1800V Y1-CU

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1800V
Current - On State (It (AV)) (Max): 320A
Current - On State (It (RMS)) (Max): 520A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
Current - Hold (Ih) (Max): 150mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y1-CU

paquet: Y1-CU

Stock5 968

VVZB120-16IO2

IXYS

3-PHASE BRIDGE RECT 1600V 120A

Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 120A
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 750A @ 50MHz
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V2-PAK

paquet: V2-PAK

Stock2 704

MLO175-12IO7

IXYS

MODULE AC CONTROL 1200V ECO-PAC1

Structure: 1-Phase Controller - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 80A
Current - On State (It (RMS)) (Max): 125A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

paquet: Module

Stock3 296

DSA300I45NA

IXYS

DIODE MODULE 45V 300A SOT227B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 45V
Capacitance @ Vr, F: 16500pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -

paquet: SOT-227-4, miniBLOC

Stock5 792

DSEI8-06AS

IXYS

DIODE FAST REC 600V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock93 600

DSAI35-12A

IXYS

DIODE AVALANCHE 1.2KV 49A DO203

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 49A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C

paquet: DO-203AB, DO-5, Stud

Stock4 800

MDK950-20N1W

IXYS

DIODE MODULE 2KV 950A

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io) (per Diode): 950A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18µs
Current - Reverse Leakage @ Vr: 50mA @ 2000V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

paquet: Module

Stock6 816

MDA950-20N1W

IXYS

DIODE MODULE 2KV 950A

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io) (per Diode): 950A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18µs
Current - Reverse Leakage @ Vr: 50mA @ 2000V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

paquet: Module

Stock7 632

DSEI2X101-06P

IXYS

DIODE MODULE 600V 96A ECO-PAC2

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 96A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 3mA @ 600V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

paquet: ECO-PAC2

Stock4 320

VUO120-12NO2T

IXYS

DIODE BRIDGE 1200V 180A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 180A
Voltage - Forward (Vf) (Max) @ If: 1.59V @ 150A
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V2-PAK
Supplier Device Package: V2-PAK

paquet: V2-PAK

Stock4 576

IXBOD2-56R

IXYS

THYRISTOR RADIAL

Voltage - Breakover: 5600V
Voltage - Off State: -
Voltage - On State: -
Current - Peak Pulse (8/20µs): -
Current - Peak Pulse (10/1000µs): -
Current - Hold (Ih): 20mA
Number of Elements: 1
Capacitance: -
Mounting Type: Through Hole
Package / Case: Radial

paquet: Radial

Stock8 100

IXFA130N15X3TRL

IXYS

MOSFET N-CH 150V 130A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

paquet: -

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N2825TJ400

IXYS

SCR 4KV 5520A W81

Voltage - Off State: 4 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 3.37 V
Current - On State (It (AV)) (Max): 2825 A
Current - On State (It (RMS)) (Max): 5520 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Supplier Device Package: W81

paquet: -

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QJ6025RH4TP

IXYS

TRIAC 600V 25A TO220

Triac Type: Standard
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

paquet: -

Stock3 000

IXGM30N60

IXYS

IGBT 600V 50A 200W TO-204AE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 100 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: 200 W
Switching Energy: -
Input Type: Standard
Gate Charge: 180 nC
Td (on/off) @ 25°C: 100ns/500ns
Test Condition: -
Reverse Recovery Time (trr): 200 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Supplier Device Package: TO-204AE

paquet: -

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DSEP12-12AZ-TUB

IXYS

DIODE GEN PURP 1.2KV 12A TO263HV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Stock12

DHG60U1200LB-TRR

IXYS

BIPOLAR MODULE-BRIDGE RECTIFIER

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 2.92 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

paquet: -

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CMA30E1600PZ-TRL

IXYS

SCR 1.6KV 47A TO263

Voltage - Off State: 1.6 kV
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Gate Trigger (Igt) (Max): 28 mA
Voltage - On State (Vtm) (Max): 1.42 V
Current - On State (It (AV)) (Max): 30 A
Current - On State (It (RMS)) (Max): 47 A
Current - Hold (Ih) (Max): 60 mA
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV

paquet: -

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IXFA130N15X3

IXYS

MOSFET N-CH 150V 130A TO263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA (IXFA)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

paquet: -

Stock309