Produits IXYS

IXGX120N60B3

IXYS

IGBT 600V 280A 780W PLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 280A
• Current - Collector Pulsed (Icm): 600A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
• Power - Max: 780W
• Switching Energy: 2.9mJ (on), 3.5mJ (off)
• Input Type: Standard
• Gate Charge: 465nC
• Td (on/off) @ 25°C: 40ns/227ns
• Test Condition: 480V, 100A, 2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

paquet: TO-247-3

IXGH30N120IH

IXYS

IGBT 1200V 50A TO-247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

paquet: TO-247-3

VIO25-06P1

IXYS

MOD IGBT DIODE SGL 600V ECOPAC2

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 24.5A
• Power - Max: 82W
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
• Current - Collector Cutoff (Max): 600µA
• Input Capacitance (Cies) @ Vce: 8nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

paquet: ECO-PAC2

MUBW30-12A6K

IXYS

MODULE IGBT CBI E1

• IGBT Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Power - Max: 130W
• Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 30A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 1nF @ 25V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E1
• Supplier Device Package: E1

paquet: E1

IXGN72N60C3H1

IXYS

IGBT 78A 600V SOT-227B

• IGBT Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 78A
• Power - Max: 360W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 4.78nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

paquet: SOT-227-4, miniBLOC

IXFK66N50Q2

IXYS

MOSFET N-CH 500V 66A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 735W (Tc)
• Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

paquet: TO-264-3, TO-264AA

IXFV30N50P

IXYS

MOSFET N-CH 500V 30A PLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS220
• Package / Case: TO-220-3, Short Tab

paquet: TO-220-3, Short Tab

IXFN24N100

IXYS

MOSFET N-CH 1KV 24A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 24A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 568W (Tc)
• Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

paquet: SOT-227-4, miniBLOC

VMO580-02F

IXYS

MOSFET N-CH 200V 580A MODULE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 580A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 50mA
• Gate Charge (Qg) (Max) @ Vgs: 2750nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 430A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: Y3-Li
• Package / Case: Y3-Li

paquet: Y3-Li

CLA60MT1200NTZ

IXYS

TRIAC 1.2KV 66A TO-268AA

• Triac Type: Standard
• Voltage - Off State: 1200V (1.2kV)
• Current - On State (It (RMS)) (Max): 66A
• Voltage - Gate Trigger (Vgt) (Max): 1.3V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
• Current - Gate Trigger (Igt) (Max): 60mA
• Current - Hold (Ih) (Max): 60mA
• Configuration: Single
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268AA

paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

MCD310-08IO1

IXYS

MOD THYRISTOR/DIODE 800V Y2-DCB

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 320A
• Current - On State (It (RMS)) (Max): 500A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y2-DCB

paquet: Y2-DCB

VHF36-12IO5

IXYS

RECT BRIDGE 1PH 1200V FO-F-A

• Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
• Number of SCRs, Diodes: 2 SCRs, 2 Diodes
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 36A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1V
• Current - Gate Trigger (Igt) (Max): 65mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
• Current - Hold (Ih) (Max): 100mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: X118

paquet: X118

MCC95-12IO8B

IXYS

THYRISTOR MODULE 1200V 2X116A

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 116A
• Current - On State (It (RMS)) (Max): 180A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

paquet: TO-240AA

DSS10-01AS

IXYS

DIODE SCHOTTKY 100V 10A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MDD950-16N1W

IXYS

DIODE MODULE 1.6KV 950A

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 950A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 18µs
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

paquet: Module

DPG30C400PB

IXYS

DIODE ARRAY GP 400V 15A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.39V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45ns
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

paquet: TO-220-3

IXDD414CI

IXYS

IC MOSFET DRV LS 14A SGL 5TO-220

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 14A, 14A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-5
• Supplier Device Package: TO-220-5

paquet: TO-220-5

IXCP50M35

IXYS

IC CURRENT REGULATOR TO220AB

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: -
• Current - Output: 50mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

paquet: TO-220-3

SLMD960H12

IXYS

MONO SOLAR CELL 42MM X 35MM

• Power (Watts) - Max: 218mW
• Current @ Pmpp: 36mA
• Voltage @ Pmpp: 6.06V
• Current Short Circuit (Isc): 40mA
• Type: Monocrystalline
• Voltage - Open Circuit: 7.56V
• Operating Temperature: -
• Package / Case: Cell (12)
• Size / Dimension: 1.378" L x 1.654" W x 0.079" H (35.00mm x 42.00mm x 2.00mm)

paquet: Cell (12)

DVRFD631-375/475

IXYS

IXRFD631 DE-375/DE-475 DEV BOARD

• Type: MOSFET Driver
• Frequency: -
• For Use With/Related Products: IXRFD631
• Supplied Contents: Board

paquet: -

MDNA380P2200KC

IXYS

DIODE MODULE GP 2200V 380A Y1-CU

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200 V
• Current - Average Rectified (Io) (per Diode): 380A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 300 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 2200 V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU
• Supplier Device Package: Y1-CU

paquet: -

Request a Quote

N1806QK180

IXYS

SCR 1.8KV 3571A WP2

• Voltage - Off State: 1.8 kV
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 2.4 V
• Current - On State (It (AV)) (Max): 1806 A
• Current - On State (It (RMS)) (Max): 3571 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, B-PuK
• Supplier Device Package: WP2

paquet: -

Request a Quote

IXFH150N25X3

IXYS

MOSFET N-CH 250V 150A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250 V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 780W (Tc)
• Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

paquet: -

Request a Quote

IXFH80N65X2-4

IXYS

MOSFET N-CH 650V 80A TO247-4L

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 890W (Tc)
• Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4L
• Package / Case: TO-247-4

paquet: -

Request a Quote

DSA15IM45UC-TRL

IXYS

DIODE SCHOTTKY 45V 15A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250 µA @ 45 V
• Capacitance @ Vr, F: 227pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

Request a Quote

DSSK18-0025BS-TUB

IXYS

DIODE ARR SCHOTT 25V 10A TO263

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 25 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 mA @ 25 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

paquet: -

Request a Quote

IXFH40N80XA

IXYS

MOSFET N-CH 4A TO247

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

paquet: -

Request a Quote

IXFX52N100X

IXYS

MOSFET N-CH 1000V 52A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000 V
• Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247™-3
• Package / Case: TO-247-3 Variant

paquet: -

Request a Quote