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Produits Infineon Technologies - Transistors - FET, MOSFET - Simples

Dossiers 8 381
Page  66/300
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Description
paquet
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSZ0602LSATMA1
Infineon Technologies

MOSFET N-CH 80V 13A/40A TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 36µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
paquet: -
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MOSFET (Metal Oxide)
80 V
13A (Ta), 40A (Tc)
4.5V, 10V
2.3V @ 36µA
18 nC @ 4.5 V
2340 pF @ 40 V
±20V
-
69W (Tc)
7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
IPB80P03P4L07ATMA2
Infineon Technologies

MOSFET_(20V 40V) PG-TO263-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
Stock4 536
MOSFET (Metal Oxide)
30 V
80A (Tc)
4.5V, 10V
2V @ 130µA
80 nC @ 10 V
5700 pF @ 25 V
+5V, -16V
-
88W (Tc)
6.9mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IQE046N08LM5CGATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 47µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TTFN-9-3
  • Package / Case: 9-PowerTDFN
paquet: -
Stock14 670
MOSFET (Metal Oxide)
80 V
15.6A (Ta), 99A (Tc)
4.5V, 10V
2.3V @ 47µA
38 nC @ 10 V
3250 pF @ 40 V
±20V
-
2.5W (Ta), 100W (Tc)
4.6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TTFN-9-3
9-PowerTDFN
IPP040N06NF2SAKMA1
Infineon Technologies

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
paquet: -
Stock126
MOSFET (Metal Oxide)
60 V
80A (Tc)
6V, 10V
3.3V @ 50µA
44 nC @ 10 V
3375 pF @ 30 V
±20V
-
3W (Ta), 107W (Tc)
4mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
ISK024NE2LM5AULA1
Infineon Technologies

TRENCH <= 40V PG-VSON-6

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-PQFN Dual (2x2)
  • Package / Case: 6-PowerVDFN
paquet: -
Stock23 865
MOSFET (Metal Oxide)
40 V
-
-
-
-
-
±16V
-
-
-
-
Surface Mount
6-PQFN Dual (2x2)
6-PowerVDFN
IPD50P04P4L11ATMA2
Infineon Technologies

MOSFET P-CH 40V 50A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock17 070
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
2.2V @ 85µA
59 nC @ 10 V
3900 pF @ 25 V
+5V, -16V
-
58W (Tc)
10.6mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC0805LSATMA1
Infineon Technologies

MOSFET N-CH 100V 79A TDSON-8-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 49µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-6
  • Package / Case: 8-PowerTDFN
paquet: -
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MOSFET (Metal Oxide)
100 V
79A (Tc)
4.5V, 10V
2.3V @ 49µA
20 nC @ 4.5 V
2700 pF @ 50 V
±20V
-
83W (Tc)
7mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
IPDD60R075CFD7XTMA1
Infineon Technologies

MOSFET N-CH 600V 40A HDSOP-10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 570µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 266W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-10-1
  • Package / Case: 10-PowerSOP Module
paquet: -
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MOSFET (Metal Oxide)
600 V
40A (Tc)
-
4.5V @ 570µA
51 nC @ 10 V
2102 pF @ 400 V
±20V
-
266W (Tc)
75mOhm @ 11.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
IPDQ65R040CFD7XTMA1
Infineon Technologies

HIGH POWER_NEW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
  • Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22-1
  • Package / Case: 22-PowerBSOP Module
paquet: -
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MOSFET (Metal Oxide)
650 V
64A (Tc)
10V
4.5V @ 1.24mA
97 nC @ 10 V
4975 pF @ 400 V
±20V
-
357W (Tc)
40mOhm @ 24.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
64-2144PBF
Infineon Technologies

MOSFET N-CH 200V 9.3A D2PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPB011N04NF2SATMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 249µA
  • Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
Stock2 199
MOSFET (Metal Oxide)
40 V
43A (Ta), 201A (Tc)
6V, 10V
3.4V @ 249µA
315 nC @ 10 V
15000 pF @ 20 V
±20V
-
3.8W (Ta), 375W (Tc)
1.15mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA65R660CFDXKSA2
Infineon Technologies

MOSFET N-CH 700V 6A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 27.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock1 500
MOSFET (Metal Oxide)
700 V
6A (Tc)
10V
4.5V @ 200µA
22 nC @ 10 V
615 pF @ 100 V
±20V
-
27.8W (Tc)
660mOhm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
IRFP4332PBFXKMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
paquet: -
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MOSFET (Metal Oxide)
250 V
57A (Tc)
10V
5V @ 250µA
150 nC @ 10 V
5860 pF @ 25 V
±30V
-
360W (Tc)
33mOhm @ 35A, 10V
-40°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
IMZA65R039M1HXKSA1
Infineon Technologies

SILICON CARBIDE MOSFET, PG-TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
  • Vgs (Max): +20V, -2V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-3
  • Package / Case: TO-247-4
paquet: -
Stock306
SiCFET (Silicon Carbide)
650 V
50A (Tc)
18V
5.7V @ 7.5mA
41 nC @ 18 V
1393 pF @ 400 V
+20V, -2V
-
176W (Tc)
50mOhm @ 25A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-3
TO-247-4
IPTC015N10NM5ATMA1
Infineon Technologies

MOSFET N-CH 100V 35A/354A HDSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 354A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-16-2
  • Package / Case: 16-PowerSOP Module
paquet: -
Request a Quote
MOSFET (Metal Oxide)
100 V
35A (Ta), 354A (Tc)
6V, 10V
3.8V @ 275µA
208 nC @ 10 V
16000 pF @ 50 V
±20V
-
3.8W (Ta), 375W (Tc)
1.5mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HDSOP-16-2
16-PowerSOP Module
ISP12DP06NMXTSA1
Infineon Technologies

MOSFET P-CH 60V 2.8A SOT223-4

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 520µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
paquet: -
Stock4 914
MOSFET (Metal Oxide)
60 V
2.8A (Ta)
10V
4V @ 520µA
20.2 nC @ 10 V
790 pF @ 30 V
±20V
-
1.8W (Ta), 4.2W (Tc)
125mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
IPD079N06L3GBTMA1
Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 34µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
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MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
2.2V @ 34µA
29 nC @ 4.5 V
4900 pF @ 30 V
±20V
-
79W (Tc)
7.9mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
98-0193
Infineon Technologies

IC MOSFET HS PWR SW 35A D2PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
-
-
-
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IPD040N08NF2SATMA1
Infineon Technologies

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock11 061
MOSFET (Metal Oxide)
80 V
20A (Ta), 129A (Tc)
6V, 10V
3.8V @ 85µA
81 nC @ 10 V
3800 pF @ 40 V
±20V
-
3W (Ta), 150W (Tc)
4mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
ISC800P06LMATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 724µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
paquet: -
Stock13 305
MOSFET (Metal Oxide)
60 V
19.6A (Tc)
4.5V, 10V
2V @ 724µA
14.8 nC @ 10 V
1400 pF @ 30 V
±20V
-
83W (Tc)
80mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
IPI65R190CFDXKSA2
Infineon Technologies

MOSFET N-CH 650V 17.5A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
paquet: -
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MOSFET (Metal Oxide)
650 V
17.5A (Tc)
10V
4.5V @ 700µA
68 nC @ 10 V
1850 pF @ 100 V
±20V
-
151W (Tc)
190mOhm @ 7.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
SPI16N50C3
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 675µA
  • Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
paquet: -
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MOSFET (Metal Oxide)
500 V
16A (Tc)
10V
3.9V @ 675µA
66 nC @ 10 V
1600 pF @ 25 V
±20V
-
160W (Tc)
280mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2PAK, TO-262AA
BSZ058N03LSGATMA1
Infineon Technologies

MOSFET N-CH 30V 15A/40A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
paquet: -
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MOSFET (Metal Oxide)
30 V
15A (Ta), 40A (Tc)
4.5V, 10V
2.2V @ 250µA
30 nC @ 10 V
2400 pF @ 15 V
±20V
-
2.1W (Ta), 45W (Tc)
5.8mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
IPD85P04P407ATMA2
Infineon Technologies

MOSFET P-CH 40V 85A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock79 641
MOSFET (Metal Oxide)
40 V
85A (Tc)
-
4V @ 150µA
89 nC @ 10 V
6085 pF @ 25 V
±20V
-
88W (Tc)
7.3mOhm @ 85A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR3910
Infineon Technologies

MOSFET N-CH 100V 16A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
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MOSFET (Metal Oxide)
100 V
16A (Tc)
-
4V @ 250µA
44 nC @ 10 V
640 pF @ 25 V
-
-
-
115mOhm @ 10A, 10V
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD60R360CFD7ATMA1
Infineon Technologies

MOSFET N-CH 600V 7A TO252-3-313

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock4 608
MOSFET (Metal Oxide)
600 V
7A (Tc)
10V
4.5V @ 140µA
14 nC @ 10 V
679 pF @ 400 V
±20V
-
43W (Tc)
360mOhm @ 2.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB60R385CPATMA1
Infineon Technologies

MOSFET N-CH 600V 9A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
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MOSFET (Metal Oxide)
600 V
9A (Tc)
10V
3.5V @ 340µA
22 nC @ 10 V
790 pF @ 100 V
±20V
-
83W (Tc)
385mOhm @ 5.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AIMZA75R016M1HXKSA1
Infineon Technologies

IGBT

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Request a Quote
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