Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3-11
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5 776 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 2.2V @ 20µA | 40nC @ 10V | 2890pF @ 25V | ±16V | - | 50W (Tc) | 12 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 90A PG-TO220-3
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paquet: TO-220-3 |
Stock5 600 |
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MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4V @ 90µA | 128nC @ 10V | 10400pF @ 25V | ±20V | - | 150W (Tc) | 4 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A PG-TO220-3
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paquet: TO-220-3 |
Stock4 720 |
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MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 120µA | 160nC @ 10V | 13150pF @ 25V | ±20V | - | 167W (Tc) | 3.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A PG-TO220-3
|
paquet: TO-220-3 |
Stock4 272 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 140µA | 195nC @ 10V | 15750pF @ 25V | ±20V | - | 188W (Tc) | 2.8 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 18A
|
paquet: 8-PowerVDFN |
Stock7 600 |
|
MOSFET (Metal Oxide) | 100V | 18A (Ta), 105A (Tc) | 10V | 3.6V @ 150µA | 50nC @ 10V | 2116pF @ 50V | ±20V | - | 3.8W (Ta), 132W (Tc) | 6 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 25V 25A
|
paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock6 496 |
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MOSFET (Metal Oxide) | 25V | 25A (Ta) | 4.5V, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 5305pF @ 13V | ±20V | - | 2.5W (Ta) | 2.7 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO-220-3
|
paquet: TO-220-3 |
Stock5 408 |
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MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 25nC @ 4.5V | 5300pF @ 15V | ±20V | - | 94W (Tc) | 3.4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-220
|
paquet: TO-220-3 |
Stock7 440 |
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MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 500µA | 64nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 440 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 21A I2PAK
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2 384 |
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MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 190 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 20.7A TO-262
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2 672 |
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MOSFET (Metal Oxide) | 600V | 20.7A (Tc) | 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 190 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO262-3
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7 568 |
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MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 3.9V @ 675µA | 63nC @ 10V | 1600pF @ 25V | ±20V | - | 156W (Tc) | 280 mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 500V 11.6A TO-262
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7 104 |
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MOSFET (Metal Oxide) | 500V | 11.6A (Tc) | 10V | 3.9V @ 500µA | 49nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 380 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-262
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7 600 |
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MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 380 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-262
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3 200 |
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MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 380 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 500V 7.6A TO-262
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3 152 |
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MOSFET (Metal Oxide) | 500V | 7.6A (Tc) | 10V | 3.9V @ 350µA | 32nC @ 10V | 750pF @ 25V | ±20V | - | 83W (Tc) | 600 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 80V 26A
|
paquet: 8-VQFN |
Stock4 720 |
|
MOSFET (Metal Oxide) | 80V | 26A (Ta) | 10V | 3.6V @ 250µA | 74nC @ 10V | 3186pF @ 40V | ±20V | - | 4W (Ta), 195W (Tc) | 3.1 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | - | 8-PQFN (5x6) | 8-VQFN |
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Infineon Technologies |
MOSFET N-CH 80V 22A
|
paquet: 8-VQFN |
Stock2 624 |
|
MOSFET (Metal Oxide) | 80V | 22A (Ta) | 10V | 3.6V @ 150µA | 54nC @ 10V | 2311pF @ 40V | ±20V | - | 3.6W (Ta), 156W (Tc) | 3.9 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-VQFN |
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Infineon Technologies |
MOSFET N-CH 40V PQFN
|
paquet: 8-TQFN Exposed Pad |
Stock6 416 |
|
MOSFET (Metal Oxide) | 40V | 95A (Tc) | 10V | 3.9V @ 100µA | 98nC @ 10V | 3174pF @ 25V | ±20V | - | 94W (Tc) | 3.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-TQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 100V DPAK
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paquet: - |
Stock2 960 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 40V 46A DIRECTFET2
|
paquet: DirectFET? Isometric L8 |
Stock3 472 |
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MOSFET (Metal Oxide) | 40V | 46A (Ta), 270A (Tc) | 10V | 4V @ 250µA | 330nC @ 10V | 11880pF @ 25V | ±20V | - | 3.8W (Ta), 125W (Tc) | 1 mOhm @ 160A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 100V DPAK
|
paquet: - |
Stock4 672 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V TO-220AB
|
paquet: TO-220-3 |
Stock3 904 |
|
MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 220 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO-220AB
|
paquet: TO-220-3 |
Stock6 864 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.9V @ 350µA | 27nC @ 10V | 790pF @ 25V | ±20V | - | 83W (Tc) | 600 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V TO220-3
|
paquet: TO-220-3 |
Stock3 264 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2V @ 45µA | 78nC @ 10V | 6100pF @ 25V | ±20V | - | 94W (Tc) | 3.9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET COOL MOS SAWED WAFER
|
paquet: - |
Stock2 560 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO220-3
|
paquet: TO-220-3 |
Stock7 856 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | ±20V | - | 250W (Tc) | 2.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3
|
paquet: TO-220-3 |
Stock7 792 |
|
MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3.5V @ 275µA | 206nC @ 10V | 14800pF @ 50V | ±20V | - | 300W (Tc) | 3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO220-3
|
paquet: TO-220-3 |
Stock4 560 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | ±20V | - | 188W (Tc) | 3.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |