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Produits Infineon Technologies - Transistors - FET, MOSFET - Matrices

Dossiers 506
Page  12/19
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AUIRFN8459TR
Infineon Technologies

MOSFET 2N-CH 40V 50A 8PQFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PQFN (5x6)
paquet: 8-PowerTDFN
Stock6 864
Standard
40V
50A
5.9 mOhm @ 40A, 10V
3.9V @ 50µA
60nC @ 10V
2250pF @ 25V
50W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PQFN (5x6)
BSG0810NDIATMA1
Infineon Technologies

MOSFET 2N-CH 25V 19A/39A 8TISON

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 19A, 39A
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TISON-8
paquet: 8-PowerTDFN
Stock6 256
Logic Level Gate, 4.5V Drive
25V
19A, 39A
3 mOhm @ 20A, 10V
2V @ 250µA
8.4nC @ 4.5V
1040pF @ 12V
2.5W
-55°C ~ 155°C (TJ)
Surface Mount
8-PowerTDFN
PG-TISON-8
BSG0813NDIATMA1
Infineon Technologies

MOSFET 2N-CH 25V 19A/33A 8TISON

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 19A, 33A
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TISON-8
paquet: 8-PowerTDFN
Stock3 024
Logic Level Gate, 4.5V Drive
25V
19A, 33A
3 mOhm @ 20A, 10V
2V @ 250µA
8.4nC @ 4.5V
1100pF @ 12V
2.5W
-55°C ~ 155°C (TJ)
Surface Mount
8-PowerTDFN
PG-TISON-8
hot IRF8910PBF
Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock5 376
Logic Level Gate
20V
10A
13.4 mOhm @ 10A, 10V
2.55V @ 250µA
11nC @ 4.5V
960pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BSC0910NDIATMA1
Infineon Technologies

MOSFET 2N-CH 25V 16A/31A TISON8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 11A, 31A
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TISON-8
paquet: 8-PowerTDFN
Stock3 136
Logic Level Gate, 4.5V Drive
25V
11A, 31A
4.6 mOhm @ 25A, 10V
2V @ 250µA
6.6nC @ 4.5V
4500pF @ 12V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PG-TISON-8
AUIRFN8458TR
Infineon Technologies

MOSFET 2N-CH 40V 43A 8PQFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PQFN (5x6)
paquet: 8-PowerTDFN
Stock3 120
Standard
40V
43A (Tc)
10 mOhm @ 26A, 10V
3.9V @ 25µA
33nC @ 10V
1060pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PQFN (5x6)
IRF7341GTRPBF
Infineon Technologies

MOSFET N-CH 55V 5.1A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock2 720
Standard
55V
5.1A
50 mOhm @ 5.1A, 10V
1V @ 250µA (Min)
44nC @ 10V
780pF @ 25V
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRFHM792TRPBF
Infineon Technologies

MOSFET 2N-CH 100V 2.3A 8PQFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
paquet: 8-PowerVDFN
Stock167 280
Standard
100V
2.3A
195 mOhm @ 2.9A, 10V
4V @ 10µA
6.3nC @ 10V
251pF @ 25V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-PQFN (3.3x3.3), Power33
AUIRF7319QTR
Infineon Technologies

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
paquet: 8-SOIC
Stock4 400
Logic Level Gate
30V
6.5A, 4.9A
29 mOhm @ 5.8A, 10V
3V @ 250µA
33nC @ 10V
650pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SO
AUIRF7316QTR
Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
paquet: 8-SOIC
Stock3 312
Logic Level Gate
30V
-
58 mOhm @ 4.9A, 10V
3V @ 250µA
34nC @ 10V
710pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SO
IPG20N06S4L11AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 28µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
  • Power - Max: 65W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
paquet: 8-PowerVDFN
Stock4 096
Logic Level Gate
60V
20A
11.2 mOhm @ 17A, 10V
2.2V @ 28µA
53nC @ 10V
4020pF @ 25V
65W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
IPG20N06S4L11ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 28µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
  • Power - Max: 65W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
paquet: 8-PowerVDFN
Stock7 744
Logic Level Gate
60V
20A
11.2 mOhm @ 17A, 10V
2.2V @ 28µA
53nC @ 10V
4020pF @ 25V
65W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
AUIRF7379QTR
Infineon Technologies

MOSFET N/P-CH 30V 5.8A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock5 696
Logic Level Gate
30V
5.8A, 4.3A
45 mOhm @ 5.8A, 10V
3V @ 250µA
25nC @ 10V
520pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AUIRF7304QTR
Infineon Technologies

MOSFET 2P-CH 20V 4A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
paquet: 8-SOIC
Stock4 480
Logic Level Gate
20V
4.3A
90 mOhm @ 2.2A, 4.5V
1.5V @ 250µA
22nC @ 4.5V
610pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SO
AUIRF7303QTR
Infineon Technologies

MOSFET 2N-CH 30V 5.3A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
paquet: 8-SOIC
Stock3 520
Logic Level Gate
30V
5.3A
50 mOhm @ 2.7A, 10V
3V @ 100µA
21nC @ 10V
515pF @ 25V
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SO
IPG20N04S4L07AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
  • Power - Max: 65W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
paquet: 8-PowerVDFN
Stock2 752
Logic Level Gate
40V
20A
7.2 mOhm @ 17A, 10V
2.2V @ 30µA
50nC @ 10V
3980pF @ 25V
65W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
BSO203PHXUMA1
Infineon Technologies

MOSFET 2P-CH 20V 7A 8DSO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-8
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock6 256
Logic Level Gate
20V
7A
21 mOhm @ 8.2A, 4.5V
1.2V @ 100µA
39nC @ 4.5V
3750pF @ 15V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-DSO-8
IPG20N06S415ATMA2
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
paquet: 8-PowerVDFN
Stock3 808
Standard
60V
20A
15.5 mOhm @ 17A, 10V
4V @ 20µA
29nC @ 10V
2260pF @ 25V
50W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
hot IRF7328PBF
Infineon Technologies

MOSFET 2P-CH 30V 8A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock15 120
Logic Level Gate
30V
8A
21 mOhm @ 8A, 10V
2.5V @ 250µA
78nC @ 10V
2675pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BSC0923NDIATMA1
Infineon Technologies

MOSFET 2N-CH 30V 17A/32A TISON8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A, 32A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TISON-8
paquet: 8-PowerTDFN
Stock5 408
Logic Level Gate, 4.5V Drive
30V
17A, 32A
5 mOhm @ 20A, 10V
2V @ 250µA
10nC @ 4.5V
1160pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PG-TISON-8
BSC0924NDIATMA1
Infineon Technologies

MOSFET 2N-CH 30V 17A/32A TISON8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A, 32A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TISON-8
paquet: 8-PowerTDFN
Stock7 456
Logic Level Gate, 4.5V Drive
30V
17A, 32A
5 mOhm @ 20A, 10V
2V @ 250µA
10nC @ 4.5V
1160pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PG-TISON-8
AUIRF9952QTR
Infineon Technologies

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock4 240
Logic Level Gate
30V
3.5A, 2.3A
100 mOhm @ 2.2A, 10V
3V @ 250µA
14nC @ 10V
190pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IPG20N06S4L14AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
paquet: 8-PowerVDFN
Stock7 104
Logic Level Gate
60V
20A
13.7 mOhm @ 17A, 10V
2.2V @ 20µA
39nC @ 10V
2890pF @ 25V
50W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
IPG20N06S4L14ATMA2
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
paquet: 8-PowerVDFN
Stock6 944
Logic Level Gate
60V
20A
13.7 mOhm @ 17A, 10V
2.2V @ 20µA
39nC @ 10V
2890pF @ 25V
50W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
IPG20N04S4L08AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 22µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
  • Power - Max: 54W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
paquet: 8-PowerVDFN
Stock6 992
Logic Level Gate
40V
20A
8.2 mOhm @ 17A, 10V
2.2V @ 22µA
39nC @ 10V
3050pF @ 25V
54W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
IPG20N10S436AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 16µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
  • Power - Max: 43W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
paquet: 8-PowerVDFN
Stock7 920
Standard
100V
20A
36 mOhm @ 17A, 10V
3.5V @ 16µA
15nC @ 10V
990pF @ 25V
43W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
IPG20N06S2L50AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 19µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
  • Power - Max: 51W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
paquet: 8-PowerVDFN
Stock7 376
Logic Level Gate
55V
20A
50 mOhm @ 15A, 10V
2V @ 19µA
17nC @ 10V
560pF @ 25V
51W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
BSZ215CHXTMA1
Infineon Technologies

MOSFET N/P-CH 20V 8TDSON

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TSDSON-8-FL
paquet: 8-PowerTDFN
Stock4 944
Logic Level Gate, 2.5V Drive
20V
5.1A, 3.2A
55 mOhm @ 5.1A, 4.5V
1.4V @ 110µA
2.8nC @ 4.5V
419pF @ 10V
2.5W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PG-TSDSON-8-FL