Produits GeneSiC Semiconductor

MBRH20035L

GeneSiC Semiconductor

DIODE MODULE 35V 200A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

paquet: D-67

GKR240/12

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 320A DO205

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 320A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 60mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -40°C ~ 180°C

paquet: DO-205AB, DO-9, Stud

MBR7540R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 40V DO5

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 75A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 75A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-203AB, DO-5, Stud

1N5834

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 40A DO5

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 590mV @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 10V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-203AB, DO-5, Stud

MUR2520

GeneSiC Semiconductor

DIODE GEN PURP 200V 25A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-203AA, DO-4, Stud

FR70K05

GeneSiC Semiconductor

DIODE GEN PURP 800V 70A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 25µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -40°C ~ 125°C

paquet: DO-203AB, DO-5, Stud

FR16J02

GeneSiC Semiconductor

DIODE GEN PURP 600V 16A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 25µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-203AA, DO-4, Stud

1N1183R

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 35A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 190°C

paquet: DO-203AB, DO-5, Stud

FR6AR05

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 16A DO4

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-203AA, DO-4, Stud

MBRH20045

GeneSiC Semiconductor

DIODE MODULE 45V 200A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

paquet: D-67

1N3768R

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 35A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 190°C

paquet: DO-203AB, DO-5, Stud

GB20SLT12-247

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 20A TO247AC

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 2V @ 20A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Capacitance @ Vr, F: 968pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AC
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-247-2

MBRTA60020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io) (per Diode): 300A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 20V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

paquet: Three Tower

MBRTA500150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 250A 3TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 250A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4mA @ 150V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

paquet: Three Tower

MBRTA40030L

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 30V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

paquet: Three Tower

MBRF200150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 100A TO244AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 150V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

paquet: TO-244AB

MBRF12080R

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 60A TO244AB

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 80V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

paquet: TO-244AB

MBRT60020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A 3 TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io) (per Diode): 300A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 20V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

paquet: Three Tower

FST100100

GeneSiC Semiconductor

DIODE MODULE 100V 100A TO249AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 20V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: TO-249AB
• Supplier Device Package: TO-249AB

paquet: TO-249AB

MBR2X050A060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 50A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 50A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 50A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

paquet: SOT-227-4, miniBLOC

MBR200100CTS

GeneSiC Semiconductor

DIODE MODULE 100V 200A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 200A (DC)
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 80V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Screw Mount
• Package / Case: SOT-227-4
• Supplier Device Package: SOT-227

paquet: SOT-227-4

BR101

GeneSiC Semiconductor

DIODE BRIDGE 100V 10A BR-10

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, BR-10
• Supplier Device Package: BR-10

paquet: 4-Square, BR-10

BR32

GeneSiC Semiconductor

DIODE BRIDGE 200V 3A BR-3

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Operating Temperature: -65°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, BR-3
• Supplier Device Package: BR-3

paquet: 4-Square, BR-3

MSRTA500160A

GeneSiC Semiconductor

DIODE MODULE GP 1.6KV 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io) (per Diode): 500A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25 µA @ 600 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

paquet: -

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GBJ30B

GeneSiC Semiconductor

100V 30A GBJ SINGLE PHASE BRIDGE

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100 V
• Current - Average Rectified (Io): 30 A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

paquet: -

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G3R45MT17K

GeneSiC Semiconductor

SIC MOSFET N-CH 61A TO247-4

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1700 V
• Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 2.7V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 438W (Tc)
• Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4
• Package / Case: TO-247-4

paquet: -

GD05MPS17J-TR

GeneSiC Semiconductor

1700V 5A TO-247-2 SIC SCHOTTKY M

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1700 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 20 µA @ 1.7 kV
• Capacitance @ Vr, F: 361pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Supplier Device Package: TO-263-7
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

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G2R1000MT17D

GeneSiC Semiconductor

SIC MOSFET N-CH 4A TO247-3

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1700 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 5.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 1000 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 44W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

paquet: -