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Produits Fairchild/ON Semiconductor - Transistors - FET, MOSFET - Simples

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Description
paquet
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FDD4685TF_SB82135
Fairchild/ON Semiconductor

MOSFET P-CH 40V DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 20V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock4 896
MOSFET (Metal Oxide)
40V
8.4A (Ta), 32A (Tc)
-
3V @ 250µA
27nC @ 5V
2380pF @ 20V
-
-
-
27 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS2510SDC
Fairchild/ON Semiconductor

MOSFET N-CH 25V 28A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool?56
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock4 176
MOSFET (Metal Oxide)
25V
28A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
45nC @ 10V
2780pF @ 13V
±20V
-
3.3W (Ta), 60W (Tc)
2.9 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool?56
8-PowerTDFN
hot FDMS2508SDC
Fairchild/ON Semiconductor

MOSFET N-CH 25V 34A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4515pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool?56
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock3 744
MOSFET (Metal Oxide)
25V
34A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
69nC @ 10V
4515pF @ 13V
±20V
-
3.3W (Ta), 78W (Tc)
1.95 mOhm @ 28A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool?56
8-PowerTDFN
FDMS2506SDC
Fairchild/ON Semiconductor

MOSFET N-CH 25V 39A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5945pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool?56
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock3 024
MOSFET (Metal Oxide)
25V
39A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
93nC @ 10V
5945pF @ 13V
±20V
-
3.3W (Ta), 89W (Tc)
1.45 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool?56
8-PowerTDFN
FDMS2504SDC
Fairchild/ON Semiconductor

MOSFET N-CH 25V 42A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool?56
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock5 008
MOSFET (Metal Oxide)
25V
42A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
119nC @ 10V
7770pF @ 13V
±20V
-
3.3W (Ta), 104W (Tc)
1.25 mOhm @ 32A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool?56
8-PowerTDFN
FDFMA2P859T
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3A MICROFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MicroFET 2x2 Thin
  • Package / Case: 6-UDFN Exposed Pad
paquet: 6-UDFN Exposed Pad
Stock2 368
MOSFET (Metal Oxide)
20V
3A (Ta)
1.8V, 4.5V
1.3V @ 250µA
6nC @ 4.5V
435pF @ 10V
±8V
Schottky Diode (Isolated)
1.4W (Ta)
120 mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
MicroFET 2x2 Thin
6-UDFN Exposed Pad
hot FDB039N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8235pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock42 180
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4.5V @ 250µA
133nC @ 10V
8235pF @ 25V
±20V
-
231W (Tc)
3.9 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDP040N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 120A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8235pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock95 988
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4.5V @ 250µA
133nC @ 10V
8235pF @ 25V
±20V
-
231W (Tc)
4 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FDI040N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8235pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK (TO-262)
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock4 656
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4.5V @ 250µA
133nC @ 10V
8235pF @ 25V
±20V
-
231W (Tc)
4 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK (TO-262)
TO-262-3 Long Leads, I2Pak, TO-262AA
TLC530TU
Fairchild/ON Semiconductor

MOSFET N-CH 330V 7A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 330V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock7 264
MOSFET (Metal Oxide)
330V
7A (Ta)
-
-
-
-
-
-
-
-
-
Through Hole
TO-220-3
TO-220-3
TLC530FTU
Fairchild/ON Semiconductor

MOSFET N-CH 330V 7A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 330V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock7 168
MOSFET (Metal Oxide)
330V
7A (Ta)
-
-
-
-
-
-
-
-
-
Through Hole
TO-220-3
TO-220-3
SSR1N60BTM_F080
Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.9A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5 072
MOSFET (Metal Oxide)
600V
900mA (Tc)
10V
4V @ 250µA
7.7nC @ 10V
215pF @ 25V
±30V
-
2.5W (Ta), 28W (Tc)
12 Ohm @ 450mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SSR1N60BTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.9A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock63 648
MOSFET (Metal Oxide)
600V
900mA (Tc)
10V
4V @ 250µA
7.7nC @ 10V
215pF @ 25V
±30V
-
2.5W (Ta), 28W (Tc)
12 Ohm @ 450mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
SSP45N20B_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 200V 35A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock3 664
MOSFET (Metal Oxide)
200V
35A (Tc)
10V
4V @ 250µA
173nC @ 10V
4300pF @ 25V
±30V
-
176W (Tc)
65 mOhm @ 17.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
hot SSH70N10A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 70A TO-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
paquet: TO-3P-3, SC-65-3
Stock819 420
MOSFET (Metal Oxide)
100V
70A (Tc)
10V
4V @ 250µA
195nC @ 10V
4870pF @ 25V
-
-
300W (Tc)
23 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
hot SI4420DY
Fairchild/ON Semiconductor

MOSFET N-CH 30V 12.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock145 284
MOSFET (Metal Oxide)
30V
12.5A (Ta)
4.5V, 10V
1V @ 250µA
53nC @ 5V
2180pF @ 15V
±20V
-
2.5W (Ta)
9 mOhm @ 12.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SFW9Z34TM
Fairchild/ON Semiconductor

MOSFET P-CH 60V 18A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 82W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock841 284
MOSFET (Metal Oxide)
60V
18A (Tc)
10V
4V @ 250µA
38nC @ 10V
1155pF @ 25V
±30V
-
3.8W (Ta), 82W (Tc)
140 mOhm @ 9A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFW9640TM
Fairchild/ON Semiconductor

MOSFET P-CH 200V 11A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 123W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock6 144
MOSFET (Metal Oxide)
200V
11A (Tc)
10V
4V @ 250µA
59nC @ 10V
1585pF @ 25V
±30V
-
3.1W (Ta), 123W (Tc)
500 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFW9530TM
Fairchild/ON Semiconductor

MOSFET P-CH 100V 10.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock5 120
MOSFET (Metal Oxide)
100V
10.5A (Tc)
10V
4V @ 250µA
38nC @ 10V
1035pF @ 25V
±30V
-
3.8W (Ta), 66W (Tc)
300 mOhm @ 5.3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFU9220TU_F080
Fairchild/ON Semiconductor

MOSFET P-CH 200V 3.1A IPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock5 152
MOSFET (Metal Oxide)
200V
3.1A (Tc)
10V
4V @ 250µA
19nC @ 10V
540pF @ 25V
±30V
-
2.5W (Ta), 30W (Tc)
1.5 Ohm @ 1.6A, 10V
-
Through Hole
TO-251-3
TO-251-3 Short Leads, IPak, TO-251AA
SFU9220TU_AM002
Fairchild/ON Semiconductor

MOSFET P-CH 200V 3.1A IPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock2 320
MOSFET (Metal Oxide)
200V
3.1A (Tc)
10V
4V @ 250µA
19nC @ 10V
540pF @ 25V
±30V
-
2.5W (Ta), 30W (Tc)
1.5 Ohm @ 1.6A, 10V
-
Through Hole
TO-251-3
TO-251-3 Short Leads, IPak, TO-251AA
hot SFR9110TF
Fairchild/ON Semiconductor

MOSFET P-CH 100V 2.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock143 340
MOSFET (Metal Oxide)
100V
2.8A (Tc)
10V
4V @ 250µA
10nC @ 10V
335pF @ 25V
±30V
-
2.5W (Ta), 20W (Tc)
1.2 Ohm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SFR9034TF
Fairchild/ON Semiconductor

MOSFET P-CH 60V 14A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock127 452
MOSFET (Metal Oxide)
60V
14A (Tc)
10V
4V @ 250µA
38nC @ 10V
1155pF @ 25V
±25V
-
2.5W (Ta), 49W (Tc)
140 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SFR9024TM
Fairchild/ON Semiconductor

MOSFET P-CH 60V 7.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock213 888
MOSFET (Metal Oxide)
60V
7.8A (Tc)
10V
4V @ 250µA
19nC @ 10V
600pF @ 25V
±30V
-
2.5W (Ta), 32W (Tc)
280 mOhm @ 3.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SFR9014TF
Fairchild/ON Semiconductor

MOSFET P-CH 60V 5.3A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock24 000
MOSFET (Metal Oxide)
60V
5.3A (Tc)
10V
4V @ 250µA
11nC @ 10V
350pF @ 25V
±30V
-
2.5W (Ta), 24W (Tc)
500 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SFP9Z34
Fairchild/ON Semiconductor

MOSFET P-CH 60V 18A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 82W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock15 432
MOSFET (Metal Oxide)
60V
18A (Tc)
10V
4V @ 250µA
38nC @ 10V
1155pF @ 25V
±30V
-
82W (Tc)
140 mOhm @ 7A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot SFP9Z24
Fairchild/ON Semiconductor

MOSFET P-CH 60V 9.7A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 49W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock48 000
MOSFET (Metal Oxide)
60V
9.7A (Tc)
10V
4V @ 250µA
19nC @ 10V
600pF @ 25V
±30V
-
49W (Tc)
280 mOhm @ 4.9A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot SFP9640
Fairchild/ON Semiconductor

MOSFET P-CH 200V 11A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 123W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock18 000
MOSFET (Metal Oxide)
200V
11A (Tc)
10V
4V @ 250µA
59nC @ 10V
1585pF @ 25V
±30V
-
123W (Tc)
500 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3