Produits Diodes Incorporated

PDC500002

Diodes Incorporated

OSC XO 125.000MHZ PECL SMD

• Type: XO (Standard)
• Frequency: 125MHz
• Function: Enable/Disable
• Output: PECL
• Voltage - Supply: 3.3V
• Frequency Stability: ±25ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 88mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

paquet: 6-SMD, No Lead

FDSAS2062

Diodes Incorporated

OSCILLATOR XO 62.5MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 62.5MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 2.5V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.053" (1.35mm)

paquet: 4-SMD, No Lead

ZXT3M322TA

Diodes Incorporated

TRANS PNP 40V 3A 3-MLP

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
• Current - Collector Cutoff (Max): 25nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
• Power - Max: 3W
• Frequency - Transition: 190MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-PowerSMD, Flat Leads
• Supplier Device Package: 3-MLP/DFN (2x2)

paquet: 3-PowerSMD, Flat Leads

MMBTA92-7

Diodes Incorporated

TRANS PNP 300V 0.5A SOT23-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 250nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 300mW
• Frequency - Transition: 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

FZT591TA

Diodes Incorporated

TRANS PNP 60V 1A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
• Power - Max: 2W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

paquet: TO-261-4, TO-261AA

DDTC144EE-7-F

Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

paquet: SOT-523

BZX84C3V9-7-F

Diodes Incorporated

DIODE ZENER 3.9V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

SBR10B45P5-13D

Diodes Incorporated

DIODE SBR 45V 10A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 380µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI?5
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: PowerDI? 5

B0520LWQ-7-F

Diodes Incorporated

DIODE SCHOTTKY 20V 500MA SOD123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 385mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 20V
• Capacitance @ Vr, F: 170pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -65°C ~ 125°C

paquet: SOD-123

S2MA-13-F

Diodes Incorporated

DIODE GEN PURP 1KV 1.5A SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-214AC, SMA

PDS560-13

Diodes Incorporated

DIODE SCHOTTKY 60V 5A POWERDI5

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 670mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI? 5
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: PowerDI? 5

S5BC-13-F

Diodes Incorporated

DIODE GEN PURP 100V 5A SMC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-214AB, SMC

BAT54CW-7

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V SOT323

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Operating Temperature - Junction: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

paquet: SC-70, SOT-323

AP7343-18FS4-7B

Diodes Incorporated

IC REG LINEAR 1.8V 300MA 4DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.39V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4

paquet: 4-XDFN Exposed Pad

PT8A3515AWE

Diodes Incorporated

IRON CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

AP3031KTTR-G1

Diodes Incorporated

IC LED DRIVER RGLTR DIM

• Type: DC DC Regulator
• Topology: Step-Up (Boost)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 2.7V
• Voltage - Supply (Max): 16V
• Voltage - Output: -
• Current - Output / Channel: 1.4A (Switch)
• Frequency: 1MHz
• Dimming: PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSOT-23-6

paquet: SOT-23-6 Thin, TSOT-23-6

74AUP2G06FW3-7

Diodes Incorporated

IC INVERTER DUAL OD 6DFN

• Logic Type: Inverter
• Number of Circuits: 2
• Number of Inputs: 2
• Features: Open Drain
• Voltage - Supply: 0.8 V ~ 3.6 V
• Current - Quiescent (Max): 0.5µA
• Current - Output High, Low: -, 4mA
• Logic Level - Low: 0.7 V ~ 0.9 V
• Logic Level - High: 1.6 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN0910-6
• Package / Case: 6-XFDFN

paquet: 6-XFDFN

LM358S-13

Diodes Incorporated

IC OPAMP GP 1MHZ 8SOP

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: -
• Gain Bandwidth Product: 1MHz
• -3db Bandwidth: -
• Current - Input Bias: 45nA
• Voltage - Input Offset: 2mV
• Current - Supply: 1mA
• Current - Output / Channel: 40mA
• Voltage - Supply, Single/Dual (±): 3 V ~ 32 V, ±1.5 V ~ 16 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

paquet: 8-SOIC (0.154", 3.90mm Width)

ZXCD1000EQ16TA

Diodes Incorporated

IC CONTROLLER AUDIO AMP EQSOP-16

• Type: Class D
• Output Type: 2-Channel (Stereo)
• Max Output Power x Channels @ Load: 1W x 2 @ 8 Ohm
• Voltage - Supply: 12 V ~ 18 V
• Features: Depop, Short-Circuit and Thermal Protection
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 70°C (TA)
• Supplier Device Package: 16-QSOP-EP
• Package / Case: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad

paquet: 16-LSSOP (0.154", 3.90mm Width) Exposed Pad

TB1500M-13

Diodes Incorporated

THYRISTOR PROTECT BI-DIR 50A SMB

• Voltage - Breakover: 180V
• Voltage - Off State: 140V
• Voltage - On State: 3.5V
• Current - Peak Pulse (8/20µs): 250A
• Current - Peak Pulse (10/1000µs): 50A
• Current - Hold (Ih): 150mA
• Number of Elements: 1
• Capacitance: 90pF
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB

paquet: DO-214AA, SMB

SMCJ64A-13

Diodes Incorporated

TVS DIODE 64VWM 103VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 14.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC

paquet: DO-214AB, SMC

PAM3101AAA285

Diodes Incorporated

IC REG LIN 2.85V 300MA SOT23-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.85V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.45V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 90µA
• Current - Supply (Max): 90µA
• PSRR: 70dB ~ 65dB (100Hz ~ 1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

DMP1012USSQ-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V SO-8 T&R 2.

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12 V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 13.5mOhm @ 9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

paquet: -

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DMG6302UDW-13

Diodes Incorporated

MOSFET 2P-CH 25V 0.15A SOT363

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
• Rds On (Max) @ Id, Vgs: 10Ohm @ 140mA, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 30.7pF @ 10V
• Power - Max: 310mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

paquet: -

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BZX84C43Q-7-F

Diodes Incorporated

ZENER DIODE SOT23 T&R 3K

• Voltage - Zener (Nom) (Vz): 43 V
• Tolerance: ±6.98%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 30.1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

paquet: -

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DMT8007LPSW-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI5060-8 (Type UX)
• Package / Case: 8-PowerTDFN

paquet: -

DMC2710UDW-13

Diodes Incorporated

MOSFET N/P-CH 20V 0.75A SOT363

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
• Power - Max: 290mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

paquet: -

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DMT3020LDV-7

Diodes Incorporated

MOSFET 2N-CH 30V 32A POWERDI3333

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
• Power - Max: 900mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PowerDI3333-8 (Type UXC)

paquet: -