Produits Diodes Incorporated

PBF620010

Diodes Incorporated

OSCILLATOR XO 156.25MHZ PECL SMD

• Type: XO (Standard)
• Frequency: 156.25MHz
• Function: Enable/Disable
• Output: PECL
• Voltage - Supply: 3.3V
• Frequency Stability: ±20ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 88mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.079" (2.00mm)

paquet: 6-SMD, No Lead

FKC500001

Diodes Incorporated

OSC XO 125.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 125MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): -
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.045" (1.15mm)

paquet: 4-SMD, No Lead

FN6600055

Diodes Incorporated

OSCILLATOR XO 66.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 66MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 40mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

paquet: 4-SMD, No Lead

DMG7401SFGQ-13

Diodes Incorporated

MOSFET P-CH 30V 9.8A POWERDI3333

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2987pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 940mW (Ta)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerWDFN

paquet: 8-PowerWDFN

ZTX692BSTOA

Diodes Incorporated

TRANS NPN 70V 1A E-LINE

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 70V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

paquet: E-Line-3, Formed Leads

FMMT560TC

Diodes Incorporated

TRANS PNP 500V 0.15A SOT23-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 500V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
• Power - Max: 500mW
• Frequency - Transition: 60MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

2DB1132R-13

Diodes Incorporated

TRANS PNP 32V 1A SOT89-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 32V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
• Power - Max: 1W
• Frequency - Transition: 190MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

paquet: TO-243AA

BZX84C3V9T-7-F

Diodes Incorporated

DIODE ZENER 3.9V 150MW SOT523

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

paquet: SOT-523

DDZ2V7ASF-7

Diodes Incorporated

DIODE ZENER 2.65V 500MW SOD323F

• Voltage - Zener (Nom) (Vz): 2.65V
• Tolerance: ±4%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 110 Ohms
• Current - Reverse Leakage @ Vr: 120µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

paquet: SC-90, SOD-323F

BZX84C30S-7

Diodes Incorporated

DIODE ZENER ARRAY 30V SOT363

• Configuration: 2 Independent
• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

paquet: 6-TSSOP, SC-88, SOT-363

BZX84C10TS-7-F

Diodes Incorporated

DIODE ZENER ARRAY 10V SOT363

• Configuration: 3 Independent
• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 7V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

paquet: 6-TSSOP, SC-88, SOT-363

DZ23C18-7-F

Diodes Incorporated

DIODE ZENER ARRAY 18V SOT23-3

• Configuration: 1 Pair Common Cathode
• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

MSB25MH-13

Diodes Incorporated

BRIDGE RECTIFIER MSBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 2.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-MSBL

paquet: 4-SMD, Flat Leads

ZM33164CSTZ

Diodes Incorporated

IC MONITOR 2.68V SUPPLY TO92-3

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 2 µs Typical Propagation Delay
• Voltage - Threshold: 4.3V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

AP2820FMMTR-G1

Diodes Incorporated

IC USB POWER SWITCH 8MSOP

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.5A
• Rds On (Typ): 60 mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

paquet: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

AP9101CK6-BPTRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT26

• Function: -
• Battery Chemistry: -
• Number of Cells: -
• Fault Protection: -
• Interface: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

74AHC1G14W5-7

Diodes Incorporated

IC SCHMIT-TRIGG INV GATE SOT25

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.9 V ~ 1.65 V
• Logic Level - High: 2.2 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-25
• Package / Case: SC-74A, SOT-753

paquet: SC-74A, SOT-753

TB3100H-13-F

Diodes Incorporated

THYRISTOR BIDIRECT 100A SMB

• Voltage - Breakover: 350V
• Voltage - Off State: 275V
• Voltage - On State: 3.5V
• Current - Peak Pulse (8/20µs): 400A
• Current - Peak Pulse (10/1000µs): 100A
• Current - Hold (Ih): 150mA
• Number of Elements: 1
• Capacitance: 80pF
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB

paquet: DO-214AA, SMB

SMAJ110A-13

Diodes Incorporated

TVS DIODE 110VWM 177VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 177V
• Current - Peak Pulse (10/1000µs): 2.3A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA

paquet: DO-214AC, SMA

P6SMAJ16ADF

Diodes Incorporated

TRANSIENTVOLTAGESUPPRESSORD-FLAT

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 16V
• Voltage - Breakdown (Min): 17.8V
• Voltage - Clamping (Max) @ Ipp: 26V
• Current - Peak Pulse (10/1000µs): 23.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: D-Flat

paquet: 2-SMD, Flat Lead

AH3382-W-7

Diodes Incorporated

MAGNETIC SWITCH UNIPOLAR SC59

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 55mT Trip, 35mT Release
• Test Condition: -40°C ~ 125°C
• Voltage - Supply: 3 V ~ 28 V
• Current - Supply (Max): 4mA
• Current - Output (Max): 55mA
• Output Type: Open Drain
• Features: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59

paquet: TO-236-3, SC-59, SOT-23-3

PI3EQX8908A2ZFEX

Diodes Incorporated

PCIE EQX W-QFN55100-54 T&R 3.5K

• Type: Buffer, ReDriver
• Applications: PCIe
• Input: CML
• Output: CML
• Data Rate (Max): 8Gbps
• Number of Channels: 8
• Delay Time: -
• Signal Conditioning: Input Equalization, Output De-Emphasis
• Capacitance - Input: -
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: -
• Package / Case: 54-WFQFN Exposed Pad
• Supplier Device Package: 54-TQFN (10x5.5)

paquet: 54-WFQFN Exposed Pad

DMT10H017LPD-13

Diodes Incorporated

MOSFET 2N-CH 100V 54.7A PWRDI50

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
• Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
• Power - Max: 2.2W (Ta), 78W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8

paquet: -

BAS40DW-04-7-F-2477

Diodes Incorporated

DIODE ARR SCHOT 40V 200MA SOT363

• Diode Configuration: 2 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io) (per Diode): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 200 nA @ 30 V
• Operating Temperature - Junction: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

paquet: -

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ZR431F005-7

Diodes Incorporated

IC VREF SHUNT ADJ 0.5% SOT23

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 20 V
• Current - Output: 100 mA
• Tolerance: ±0.5%
• Temperature Coefficient: 55ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 50 µA
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

paquet: -

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DMTH47M2LFVW-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V PowerDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 881 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.9W (Ta), 37.5W (Tc)
• Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI3333-8 (SWP) Type UX
• Package / Case: 8-PowerVDFN

paquet: -

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SDT2U40CP3-7

Diodes Incorporated

SCHOTTKY RECTIFIER X3-DSN1406-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 µA @ 40 V
• Capacitance @ Vr, F: 180pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-DFN
• Supplier Device Package: X3-DSN1406-2
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

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DMP2065UQ-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 1

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 900mW
• Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: -

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