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Produits Vishay Siliconix

Dossiers 5 544
Page  85/198
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hot 2N4118A
Vishay Siliconix

MOSFET N-CH 40V 80UA TO-206AF

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-206AF (TO-72)
paquet: TO-206AF, TO-72-4 Metal Can
Stock71 940
hot SI2331DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 3.2A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 710mW (Ta)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock110 400
hot SI2302ADS-T1
Vishay Siliconix

MOSFET N-CH 20V 2.1A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock94 812
hot IRFB17N50L
Vishay Siliconix

MOSFET N-CH 500V 16A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 220W (Tc)
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock428 160
hot IRFR210TR
Vishay Siliconix

MOSFET N-CH 200V 2.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock23 484
hot SIHG17N60D-GE3
Vishay Siliconix

MOSFET N-CH 600V 17A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 277.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock5 040
SIHG33N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 31.6A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 31.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 171nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4026pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 313W (Tc)
  • Rds On (Max) @ Id, Vgs: 109 mOhm @ 16.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock10 296
hot IRFR9220PBF
Vishay Siliconix

MOSFET P-CH 200V 3.6A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock59 064
hot SI1422DH-T1-GE3
Vishay Siliconix

MOSFET N-CH 12V 4A SC70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
paquet: 6-TSSOP, SC-88, SOT-363
Stock38 400
hot SI7964DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 6.1A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
paquet: PowerPAK? SO-8 Dual
Stock6 224
hot SI1024X-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 0.485A SOT563F

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 485mA
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
paquet: SOT-563, SOT-666
Stock2 800 284
SI4618DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SO

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
  • Power - Max: 1.98W, 4.16W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock2 912
hot SI7949DP-T1-E3
Vishay Siliconix

MOSFET 2P-CH 60V 3.2A PPAK SO-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A
  • Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
paquet: PowerPAK? SO-8 Dual
Stock10 872
SIP11206DQP-T1-E3
Vishay Siliconix

IC REG CTRLR FWRD CONV 16TSSOP

  • Output Type: Transistor Driver
  • Function: Step-Up/Step-Down
  • Output Configuration: Positive, Isolation Capable
  • Topology: Forward Converter
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 10.5 V ~ 13.2 V
  • Frequency - Switching: 200kHz ~ 1MHz
  • Duty Cycle (Max): 47%
  • Synchronous Rectifier: Yes
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: Enable, Frequency Control, Soft Start
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
  • Supplier Device Package: 16-TSSOP
paquet: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Stock5 936
SIP2804DY-T1-E3
Vishay Siliconix

IC REG CTRLR PWM CM 8SOIC

  • Output Isolation: Isolated
  • Internal Switch(s): No
  • Voltage - Breakdown: -
  • Topology: Flyback
  • Voltage - Start Up: 12.5V
  • Voltage - Supply (Vcc/Vdd): 8.3 V ~ 12 V
  • Duty Cycle: 49%
  • Frequency - Switching: 46kHz
  • Power (Watts): -
  • Fault Protection: Current Limiting
  • Control Features: Frequency Control
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
  • Mounting Type: Surface Mount
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock6 400
hot DG309BDQ
Vishay Siliconix

IC SWITCH QUAD SPST 16TSSOP

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 85 Ohm
  • Channel-to-Channel Matching (ΔRon): 1.7 Ohm
  • Voltage - Supply, Single (V+): 4 V ~ 44 V
  • Voltage - Supply, Dual (V±): ±4 V ~ 22 V
  • Switch Time (Ton, Toff) (Max): 200ns, 150ns
  • -3db Bandwidth: -
  • Charge Injection: 1pC
  • Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -95dB @ 100kHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
paquet: 16-TSSOP (0.173", 4.40mm Width)
Stock12 756
DG211BDQ-E3
Vishay Siliconix

IC SWITCH QUAD SPST 16TSSOP

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 85 Ohm
  • Channel-to-Channel Matching (ΔRon): 2 Ohm
  • Voltage - Supply, Single (V+): 4.5 V ~ 25 V
  • Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V
  • Switch Time (Ton, Toff) (Max): 300ns, 200ns
  • -3db Bandwidth: -
  • Charge Injection: 1pC
  • Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -95dB @ 100kHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
paquet: 16-TSSOP (0.173", 4.40mm Width)
Stock4 224
DG721DQ-T1-GE3
Vishay Siliconix

IC SWITCH DUAL SPST 8MSOP

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 4.5 Ohm
  • Channel-to-Channel Matching (ΔRon): 200 mOhm
  • Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 30ns, 35ns
  • -3db Bandwidth: 366MHz
  • Charge Injection: 2.2pC
  • Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
  • Current - Leakage (IS(off)) (Max): 250pA
  • Crosstalk: -90dB @ 10MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
paquet: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Stock6 016
SIHFR430ATRR-GE3
Vishay Siliconix

MOSFET N-CH 500V 5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Request a Quote
SQ3427AEEV-T1_BE3
Vishay Siliconix

MOSFET P-CH 60V 5.3A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
paquet: -
Stock25 455
IRFR320PBF-BE3
Vishay Siliconix

N-CHANNEL 400V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Request a Quote
IRF9Z30PBF-BE3
Vishay Siliconix

MOSFET P-CH 50V 18A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 9.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: -
Stock26 580
SIDR680ADP-T1-RE3
Vishay Siliconix

MOSFET N-CH 80V 30.7A/137A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8DC
  • Package / Case: PowerPAK® SO-8
paquet: -
Request a Quote
IRFBC20PBF-BE3
Vishay Siliconix

MOSFET N-CH 600V 2.2A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: -
Stock2 925
SQ4284EY-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Power - Max: 3.9W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: -
Stock14 481
SQD50P06-15L_T4GE3
Vishay Siliconix

P-CHANNEL 60-V (D-S) 175C MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock14 175
SQS966ENW-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 6A PWRPAK1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
  • Power - Max: 27.8W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: PowerPAK® 1212-8W Dual
  • Supplier Device Package: PowerPAK® 1212-8W Dual
paquet: -
Stock26 310
SQJ460AEP-T2_GE3
Vishay Siliconix

MOSFET N-CH 60V 58A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2654 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
paquet: -
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