Produits Vishay Semiconductor Diodes Division

VS-ST180S04P0V

Vishay Semiconductor Diodes Division

SCR PHASE CONT 400V 200A TO-93

• Voltage - Off State: 400V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 150mA
• Voltage - On State (Vtm) (Max): 1.75V
• Current - On State (It (AV)) (Max): 200A
• Current - On State (It (RMS)) (Max): 314A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 30mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A, 5230A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-209AB, TO-93-4, Stud
• Supplier Device Package: TO-209AB (TO-93)

paquet: TO-209AB, TO-93-4, Stud

VS-110RKI40PBF

Vishay Semiconductor Diodes Division

SCR 400V 172A TO-94 TO-209AC

• Voltage - Off State: 400V
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 120mA
• Voltage - On State (Vtm) (Max): 1.57V
• Current - On State (It (AV)) (Max): 110A
• Current - On State (It (RMS)) (Max): 172A
• Current - Hold (Ih) (Max): 200mA
• Current - Off State (Max): 20mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1750A, 1830A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-209AC, TO-94-4, Stud
• Supplier Device Package: TO-209AC (TO-94)

paquet: TO-209AC, TO-94-4, Stud

IRKH42/12A

Vishay Semiconductor Diodes Division

SCR MOD PWR 1200V 40A ADD-A-PAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 45A
• Current - On State (It (RMS)) (Max): 100A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 2)

paquet: ADD-A-PAK (3 + 2)

PTV15B-M3/84A

Vishay Semiconductor Diodes Division

DIODE ZENER 15.6V 600MW DO220AA

• Voltage - Zener (Nom) (Vz): 15.6V
• Tolerance: ±6%
• Power - Max: 600mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

paquet: DO-220AA

PLZ22B-HG3/H

Vishay Semiconductor Diodes Division

DIODE ZENER 22V 500MW DO219AC

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 17V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AC
• Supplier Device Package: DO-219AC (microSMF)

paquet: DO-219AC

AZ23B22-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 22V 300MW SOT23

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 17V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

paquet: TO-236-3, SC-59, SOT-23-3

VS-20ETF06STRL-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 20A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 160ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)
• Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NSB8ATHE3_A/P

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: 55pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VS-HFA04SD60SHM3

Vishay Semiconductor Diodes Division

DIODE HEXFRED 4A 600V DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 42ns
• Current - Reverse Leakage @ Vr: 3µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)
• Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

RS2B-E3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.5A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AA, SMB

ESH2C-E3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 2µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-214AA, SMB

VS-10BQ060HM3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Capacitance @ Vr, F: 80pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AA, SMB

RS1PGHM3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-220AA

BAS283-GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 60V 30MA SOD80

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 30mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200nA @ 200V
• Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF
• Operating Temperature - Junction: 125°C (Max)

paquet: SOD-80 Variant

SBLB25L25CT-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY DUAL TO-263AB

• Diode Configuration: -
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

VS-6CWQ04FNTRLPBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 40V DPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 40V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

GBL06-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 600V GBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBL
• Supplier Device Package: GBL

paquet: 4-SIP, GBL

1.5KE7.5CHE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 6.05VWM 11.7VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 6.05V
• Voltage - Breakdown (Min): 6.75V
• Voltage - Clamping (Max) @ Ipp: 11.7V
• Current - Peak Pulse (10/1000µs): 128A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

paquet: DO-201AA, DO-27, Axial

SMBG5.0CHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 5VWM 9.6VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5V
• Voltage - Breakdown (Min): 6.4V
• Voltage - Clamping (Max) @ Ipp: 9.6V
• Current - Peak Pulse (10/1000µs): 62.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

paquet: DO-215AA, SMB Gull Wing

3KASMC28HE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 28VWM 50VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28V
• Voltage - Breakdown (Min): 31.1V
• Voltage - Clamping (Max) @ Ipp: 50V
• Current - Peak Pulse (10/1000µs): 60A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

paquet: DO-214AB, SMC

1.5KE43CAHE3_A/C

Vishay Semiconductor Diodes Division

TVS DIODE 36.8VWM 59.3VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 36.8V
• Voltage - Breakdown (Min): 40.9V
• Voltage - Clamping (Max) @ Ipp: 59.3V
• Current - Peak Pulse (10/1000µs): 25.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

paquet: DO-201AA, DO-27, Axial

P6KE350A-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 300VWM 482VC DO204AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 300V
• Voltage - Breakdown (Min): 333V
• Voltage - Clamping (Max) @ Ipp: 482V
• Current - Peak Pulse (10/1000µs): 1.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

paquet: DO-204AC, DO-15, Axial

1N6294A-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 77.8VWM 125VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 77.8V
• Voltage - Breakdown (Min): 86.5V
• Voltage - Clamping (Max) @ Ipp: 125V
• Current - Peak Pulse (10/1000µs): 12A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

paquet: DO-201AA, DO-27, Axial

1.5SMC13CA-M3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 11.1VWM 18.2VC SMCJ

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11.1V
• Voltage - Breakdown (Min): 12.4V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 82.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

paquet: DO-214AB, SMC

SMB10J33A-E3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 33VWM 53.3VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 18.8A
• Power - Peak Pulse: 1000W (1kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

paquet: DO-214AA, SMB

P6SMB27AHE3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 23.1VWM 37.5VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 23.1V
• Voltage - Breakdown (Min): 25.7V
• Voltage - Clamping (Max) @ Ipp: 37.5V
• Current - Peak Pulse (10/1000µs): 16A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

paquet: DO-214AA, SMB

TPSMP24AHM3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 33.2VC 12A DO220AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 20.5V
• Voltage - Breakdown (Min): 22.8V
• Voltage - Clamping (Max) @ Ipp: 33.2V
• Current - Peak Pulse (10/1000µs): 12A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

paquet: DO-220AA

SMBJ45D-M3/I

Vishay Semiconductor Diodes Division

TVS DIODE 45VWM 71.6VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 45V
• Voltage - Breakdown (Min): 50.8V
• Voltage - Clamping (Max) @ Ipp: 71.6V
• Current - Peak Pulse (10/1000µs): 8.4A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

paquet: DO-214AA, SMB