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Produits Vishay Semiconductor Diodes Division

Dossiers 39 746
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VS-ST180S06P1V
Vishay Semiconductor Diodes Division

SCR 600V 314A TO-93

  • Voltage - Off State: 600V
  • Voltage - Gate Trigger (Vgt) (Max): 3V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Voltage - On State (Vtm) (Max): 1.75V
  • Current - On State (It (AV)) (Max): 200A
  • Current - On State (It (RMS)) (Max): 314A
  • Current - Hold (Ih) (Max): 600mA
  • Current - Off State (Max): 30mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 4200A, 4400A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: TO-209AB, TO-93-4, Stud
  • Supplier Device Package: TO-209AB (TO-93)
paquet: TO-209AB, TO-93-4, Stud
Stock3 232
VSKTF200-12HK
Vishay Semiconductor Diodes Division

SCR DBL 2SCR 1200V 200A MAGNAPAK

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): 200A
  • Current - On State (It (RMS)) (Max): 444A
  • Voltage - Gate Trigger (Vgt) (Max): 3V
  • Current - Gate Trigger (Igt) (Max): 200mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 7600A, 8000A
  • Current - Hold (Ih) (Max): 600mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
paquet: 3-MAGN-A-PAK?
Stock3 600
VS-P424
Vishay Semiconductor Diodes Division

MODULE BRIDGE DBLR 40A 1000V D-1

  • Structure: Bridge, Single Phase - SCRs/Diodes (Layout 3)
  • Number of SCRs, Diodes: 2 SCRs, 2 Diodes
  • Voltage - Off State: 1000V
  • Current - On State (It (AV)) (Max): -
  • Current - On State (It (RMS)) (Max): 40A
  • Voltage - Gate Trigger (Vgt) (Max): 2V
  • Current - Gate Trigger (Igt) (Max): 60mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 385A, 400A
  • Current - Hold (Ih) (Max): 130mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 8-PACE-PAK
paquet: 8-PACE-PAK
Stock6 304
hot SML4734A-E3/61
Vishay Semiconductor Diodes Division

DIODE ZENER 5.6V 1W DO214AC

  • Voltage - Zener (Nom) (Vz): 5.6V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 5 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
paquet: DO-214AC, SMA
Stock600 000
SMPZ3924B-M3/84A
Vishay Semiconductor Diodes Division

DIODE ZENER 9.1V 500MW DO220AA

  • Voltage - Zener (Nom) (Vz): 9.1V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 4 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 7V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
paquet: DO-220AA
Stock3 520
BZD27C91P-M3-08
Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219-M3

  • Voltage - Zener (Nom) (Vz): 91V
  • Tolerance: -
  • Power - Max: 800mW
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 68V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
paquet: DO-219AB
Stock2 864
BZD27C110P-HE3-18
Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219

  • Voltage - Zener (Nom) (Vz): 110V
  • Tolerance: -
  • Power - Max: 800mW
  • Impedance (Max) (Zzt): 250 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 82V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
paquet: DO-219AB
Stock4 576
BZT52C68-G3-08
Vishay Semiconductor Diodes Division

DIODE ZENER 68V 410MW SOD123

  • Voltage - Zener (Nom) (Vz): 68V
  • Tolerance: ±5%
  • Power - Max: 410mW
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
paquet: SOD-123
Stock7 088
BZT55B7V5-GS08
Vishay Semiconductor Diodes Division

DIODE ZENER 7.5V 500MW SOD80

  • Voltage - Zener (Nom) (Vz): 7.5V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 5V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: SOD-80 QuadroMELF
paquet: SOD-80 Variant
Stock3 376
BZT52C4V3-E3-08
Vishay Semiconductor Diodes Division

DIODE ZENER 4.3V 410MW SOD123

  • Voltage - Zener (Nom) (Vz): 4.3V
  • Tolerance: ±5%
  • Power - Max: 410mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
paquet: SOD-123
Stock2 304
BZT55B27-GS18
Vishay Semiconductor Diodes Division

DIODE ZENER 27V 500MW SOD80

  • Voltage - Zener (Nom) (Vz): 27V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 20V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: SOD-80 QuadroMELF
paquet: SOD-80 Variant
Stock3 680
MMBZ5227B-E3-18
Vishay Semiconductor Diodes Division

DIODE ZENER 3.6V 225MW SOT23-3

  • Voltage - Zener (Nom) (Vz): 3.6V
  • Tolerance: ±5%
  • Power - Max: 225mW
  • Impedance (Max) (Zzt): 24 Ohms
  • Current - Reverse Leakage @ Vr: 15µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock6 032
hot VS-50WQ10FNTRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 5.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 770mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Capacitance @ Vr, F: 183pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock78 096
SRP300B-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 28pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -50°C ~ 125°C
paquet: DO-201AD, Axial
Stock2 592
VB30120SG-E3/8W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 30A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3 056
V15P45-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15A 45V TO-277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 4.8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-277, 3-PowerDFN
Stock4 672
V12P10HM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 3.9A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-277, 3-PowerDFN
Stock6 080
ES2D-E3/5BT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 18pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AA, SMB
Stock5 744
BAS33-TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 30V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1nA @ 15V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
paquet: DO-204AH, DO-35, Axial
Stock6 176
V35PW12HM3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 35A 120V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 120V
  • Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock3 840
EGP20A-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 2A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-204AC, DO-15, Axial
Stock5 392
hot VT2045C-M3/4W
Vishay Semiconductor Diodes Division

RECT SCHOTTKY 45V 10A TO-220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 45V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: TO-220-3
Stock4 864
SS10P2CLHM3_A/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 20V TO277A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 850µA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
paquet: TO-277, 3-PowerDFN
Stock5 152
3KASMC28AHM3/57T
Vishay Semiconductor Diodes Division

TVS DIODE 28VWM 45.4VC DO214AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 28V
  • Voltage - Breakdown (Min): 31.1V
  • Voltage - Clamping (Max) @ Ipp: 45.4V
  • Current - Peak Pulse (10/1000µs): 66.1A
  • Power - Peak Pulse: 3000W (3kW)
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 185°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
paquet: DO-214AB, SMC
Stock6 120
SMA5J9.0HE3/61
Vishay Semiconductor Diodes Division

TVS DIODE 9VWM 16.9VC SMA

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 9V
  • Voltage - Breakdown (Min): 10V
  • Voltage - Clamping (Max) @ Ipp: 16.9V
  • Current - Peak Pulse (10/1000µs): 29.6A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
paquet: DO-214AC, SMA
Stock7 506
TMPG06-30AHE3_A/B
Vishay Semiconductor Diodes Division

TVS DIODE 41.4VC 9.7A MPG06

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 25.6V
  • Voltage - Breakdown (Min): 28.5V
  • Voltage - Clamping (Max) @ Ipp: 41.4V
  • Current - Peak Pulse (10/1000µs): 9.7A
  • Power - Peak Pulse: 400W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 185°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
paquet: MPG06, Axial
Stock2 106
SMCG10AHE3/57T
Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 17VC SMC

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 10V
  • Voltage - Breakdown (Min): 11.1V
  • Voltage - Clamping (Max) @ Ipp: 17V
  • Current - Peak Pulse (10/1000µs): 88.2A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB (SMCG)
paquet: DO-215AB, SMC Gull Wing
Stock4 842
VTVS17GSMF-M3-08
Vishay Semiconductor Diodes Division

TVS DIODE 28VC 14.21A DO219AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 16.9V
  • Voltage - Breakdown (Min): 19.6V
  • Voltage - Clamping (Max) @ Ipp: 28V
  • Current - Peak Pulse (10/1000µs): 14.21A
  • Power - Peak Pulse: 400W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 606pF @ 1MHz
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
paquet: DO-219AB
Stock4 896