Page 1044 - Produits Vishay Semiconductor Diodes Division | Heisener Electronics
Contactez nous
SalesDept@heisener.com +86-755-83210559 ext. 706
Language Translation

* Please refer to the English Version as our Official Version.

Produits Vishay Semiconductor Diodes Division

Dossiers 39 746
Page  1 044/1 420
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
IRKH42/10A
Vishay Semiconductor Diodes Division

SCR MOD PWR 1000V 40A ADD-A-PAK

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1000V
  • Current - On State (It (AV)) (Max): 45A
  • Current - On State (It (RMS)) (Max): 100A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ADD-A-PAK (3 + 2)
paquet: ADD-A-PAK (3 + 2)
Stock6 432
VLZ15A-GS08
Vishay Semiconductor Diodes Division

DIODE ZENER 13.79V 500MW SOD80

  • Voltage - Zener (Nom) (Vz): 13.79V
  • Tolerance: -
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 16 Ohms
  • Current - Reverse Leakage @ Vr: 40µA @ 12.8V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: SOD-80 QuadroMELF
paquet: SOD-80 Variant
Stock3 520
BZT52B4V3-G3-08
Vishay Semiconductor Diodes Division

DIODE ZENER 4.3V 410MW SOD123

  • Voltage - Zener (Nom) (Vz): 4.3V
  • Tolerance: ±2%
  • Power - Max: 410mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
paquet: SOD-123
Stock7 968
SB050-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V DO-201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 600mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-201AD, Axial
Stock4 720
1N4005GP-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -50°C ~ 150°C
paquet: DO-204AL, DO-41, Axial
Stock6 816
S1MA-E3/5AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1µs
  • Current - Reverse Leakage @ Vr: 3µA @ 1000V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock5 728
VS-41HF60
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 40A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 190°C
paquet: DO-203AB, DO-5, Stud
Stock7 760
BYW29-100HE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: TO-220-2
Stock7 264
SE70PB-M3/87A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2.9A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2.9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 20µA @ 100V
  • Capacitance @ Vr, F: 76pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-277, 3-PowerDFN
Stock4 560
AU2PD-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-277, 3-PowerDFN
Stock3 968
SS32HE3_A/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 125°C
paquet: DO-214AB, SMC
Stock6 016
SB1H90-E3/54
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: 175°C (Max)
paquet: DO-204AL, DO-41, Axial
Stock3 536
GPP10G-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-204AL, DO-41, Axial
Stock2 528
VS-30CTQ100GPBF
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 100V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: TO-220-3
Stock7 280
VS-30CTQ060SPBF
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 60V D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 60V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock7 860
VS-112MT120KPBF
Vishay Semiconductor Diodes Division

POWER MOD 3PH BRIDGE 110A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MT-K Module
  • Supplier Device Package: MT-K
paquet: MT-K Module
Stock5 984
GSIB640N-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 6A 400V GSIB-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
paquet: 4-SIP, GSIB-5S
Stock5 456
1N6293AHE3/51
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE 1.5KE

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 70.1V
  • Voltage - Breakdown (Min): 77.9V
  • Voltage - Clamping (Max) @ Ipp: 113V
  • Current - Peak Pulse (10/1000µs): 13.3A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: 1.5KE
paquet: DO-201AA, DO-27, Axial
Stock4 248
1.5KA24AHE3/54
Vishay Semiconductor Diodes Division

TVS DIODE 20.5VWM 33.2VC 1.5KA

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 20.5V
  • Voltage - Breakdown (Min): 22.8V
  • Voltage - Clamping (Max) @ Ipp: 33.2V
  • Current - Peak Pulse (10/1000µs): 45.2A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 185°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: 1.5KA
paquet: DO-201AA, DO-27, Axial
Stock2 502
BZW04P11HE3/73
Vishay Semiconductor Diodes Division

TVS DIODE 11.1VWM DO204AL

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 11.1V
  • Voltage - Breakdown (Min): 12.4V
  • Voltage - Clamping (Max) @ Ipp: 18.2V
  • Current - Peak Pulse (10/1000µs): 22A
  • Power - Peak Pulse: 400W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
paquet: DO-204AL, DO-41, Axial
Stock8 028
BZT03C30-TR
Vishay Semiconductor Diodes Division

TVS DIODE 24VWM 42.2VC SOD57

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 24V
  • Voltage - Breakdown (Min): 28V
  • Voltage - Clamping (Max) @ Ipp: 42.2V
  • Current - Peak Pulse (10/1000µs): 7.1A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
paquet: SOD-57, Axial
Stock6 768
TMPG06-30AHE3_A/D
Vishay Semiconductor Diodes Division

TVS DIODE 41.4VC 9.7A MPG06

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 25.6V
  • Voltage - Breakdown (Min): 28.5V
  • Voltage - Clamping (Max) @ Ipp: 41.4V
  • Current - Peak Pulse (10/1000µs): 9.7A
  • Power - Peak Pulse: 400W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 185°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
paquet: MPG06, Axial
Stock3 636
SMCJ110A-M3/57T
Vishay Semiconductor Diodes Division

TVS DIODE 110VWM 177VC DO214AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 110V
  • Voltage - Breakdown (Min): 122V
  • Voltage - Clamping (Max) @ Ipp: 177V
  • Current - Peak Pulse (10/1000µs): 8.5A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
paquet: DO-214AB, SMC
Stock7 740
1.5SMC100A-M3/9AT
Vishay Semiconductor Diodes Division

TVS DIODE 85.5VWM 137VC SMCJ

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 85.5V
  • Voltage - Breakdown (Min): 95V
  • Voltage - Clamping (Max) @ Ipp: 137V
  • Current - Peak Pulse (10/1000µs): 10.9A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
paquet: DO-214AB, SMC
Stock6 228
SMB8J10CA-E3/52
Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 17VC SMB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 10V
  • Voltage - Breakdown (Min): 11.1V
  • Voltage - Clamping (Max) @ Ipp: 17V
  • Current - Peak Pulse (10/1000µs): 47.1A
  • Power - Peak Pulse: 800W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
paquet: DO-214AA, SMB
Stock4 284
TGL41-120A-E3/96
Vishay Semiconductor Diodes Division

TVS DIODE 102VWM 165VC MELF

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 102V
  • Voltage - Breakdown (Min): 114V
  • Voltage - Clamping (Max) @ Ipp: 165V
  • Current - Peak Pulse (10/1000µs): 1.21A
  • Power - Peak Pulse: 200W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
paquet: DO-213AB, MELF
Stock3 726
hot 5KP48A-E3/54
Vishay Semiconductor Diodes Division

TVS DIODE 48VWM 77.4VC P600

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 48V
  • Voltage - Breakdown (Min): 53.3V
  • Voltage - Clamping (Max) @ Ipp: 77.4V
  • Current - Peak Pulse (10/1000µs): 64.6A
  • Power - Peak Pulse: 5000W (5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
paquet: P600, Axial
Stock14 400
P4SMA13A-E3/61
Vishay Semiconductor Diodes Division

TVS DIODE 11.1VWM 18.2VC SMA

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 11.1V
  • Voltage - Breakdown (Min): 12.4V
  • Voltage - Clamping (Max) @ Ipp: 18.2V
  • Current - Peak Pulse (10/1000µs): 22A
  • Power - Peak Pulse: 400W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
paquet: DO-214AC, SMA
Stock3 492