Page 9 - Produits Toshiba Semiconductor and Storage

Référence	Fabricant	Description	paquet	Stock
2SK2993(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 20A TO220SM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6 768
TK7P65W,RQ	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 6.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock16 554
2SA1837,S1CSF(J	Toshiba Semiconductor and Storage	TRANS PNP 1A 230V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	paquet: TO-220-3 Full Pack	Stock2 224
2SC3324GRTE85LF	Toshiba Semiconductor and Storage	TRANS NPN 120V 0.1A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	paquet: TO-236-3, SC-59, SOT-23-3	Stock2 368
RN1114(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	paquet: SC-75, SOT-416	Stock5 088
RN1306,LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W USM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	paquet: SC-70, SOT-323	Stock4 176
2SC5087-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SMQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	paquet: SC-61AA	Stock28 542
HN1B01FU-Y(L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 0.15A US6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 120MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: 6-TSSOP, SC-88, SOT-363	Stock533 208
RN1703JE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ESV Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	paquet: SOT-553	Stock6 992
TC74HC573APF	Toshiba Semiconductor and Storage	IC LATCH OCTAL D-TYPE 20-DIP Logic Type: D-Type Latch Circuit: 8:8 Output Type: Tri-State Voltage - Supply: 2 V ~ 6 V Independent Circuits: 1 Delay Time - Propagation: 17ns Current - Output High, Low: 7.8mA, 7.8mA Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: 20-DIP (0.300", 7.62mm) Supplier Device Package: 20-DIP	paquet: 20-DIP (0.300", 7.62mm)	Stock32 382
74HC4050D(BJ)	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 6V 16SOIC Logic Type: Buffer, Non-Inverting Number of Elements: 6 Number of Bits per Element: 1 Input Type: - Output Type: - Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	paquet: 16-SOIC (0.154", 3.90mm Width)	Stock23 376
TLP179D(F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET 50MA 4-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 50 Ohm Load Current: 50mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 200 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm) Relay Type: Relay	paquet: 4-SOP (0.173", 4.40mm)	Stock4 698
TB67B000FG,EL	Toshiba Semiconductor and Storage	BRUSHLESS MOTOR DRIVER IC SENSOR Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 42-SOP (0.330", 8.40mm Width), 34 Leads, Exposed Pad Supplier Device Package: 34-P-HSSOP	paquet: 42-SOP (0.330", 8.40mm Width), 34 Leads, Exposed Pad	Stock12 210
TB62208FTG,C8,EL	Toshiba Semiconductor and Storage	STEPPER MOTOR DRIVER IC 40V/1.8A Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2 Applications: General Purpose Current - Output: 1.8A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	paquet: 48-VFQFN Exposed Pad	Stock34 530
74HC139D	Toshiba Semiconductor and Storage	IC DECODER/DEMUX DUAL 16SOIC Type: Decoder/Demultiplexer Circuit: 1 x 2:4 Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	paquet: 16-SOIC (0.154", 3.90mm Width)	Stock16 080
74HCT04D	Toshiba Semiconductor and Storage	IC INVERTER 6CH 6-INP 14SOIC Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: - Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 1µA Current - Output High, Low: 4mA, 4mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 16ns @ 5.5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width)	paquet: 14-SOIC (0.154", 3.90mm Width)	Stock30 000
TCR4DG25,LF	Toshiba Semiconductor and Storage	X34 LDO REGULATORS VOUT: 2.5V IO Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.347V @ 420mA Current - Output: 420mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-WCSPE (0.65x0.65)	paquet: 4-XFBGA, CSPBGA	Stock97 134
CMG07-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -	paquet: -	Request a Quote
TCR2LE09-LM-CT	Toshiba Semiconductor and Storage	PB-F WCSP4 CMOS LDO DDRULATOR Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.9V Voltage - Output (Max): - Voltage Dropout (Max): 1.48V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	paquet: -	Request a Quote
TW015N120C-S1F	Toshiba Semiconductor and Storage	G3 1200V SIC-MOSFET TO-247 15MO FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 11.7mA Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 431W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	paquet: -	Stock81
CRF02-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 800V 500MA S-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 50 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	paquet: -	Stock8 454
TTA008B-Q	Toshiba Semiconductor and Storage	PB-F POWER TRANSISTOR TO-126 PC= Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Power - Max: 1.5 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126N	paquet: -	Stock69
SSM3J35CT-L3F	Toshiba Semiconductor and Storage	MOSFET P-CHANNEL 20V 100MA CST3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	paquet: -	Stock18 624
RN2901-LF-CT	Toshiba Semiconductor and Storage	PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: -	Stock18
TCR3LM33A-RF	Toshiba Semiconductor and Storage	LDO IOUT: 300MA PD: 420MW VIN: 6 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.251V @ 200mA Current - Output: 300mA Current - Quiescent (Iq): 2.2 µA Current - Supply (Max): - PSRR: - Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	paquet: -	Stock29 970
TCR5RG09A-LF	Toshiba Semiconductor and Storage	LDO REG, IOUT: 500MA VOUT:0.9V A Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.9V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): 13 µA Current - Supply (Max): - PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WCSPF (0.65x0.65)	paquet: -	Stock750
RN1410-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	paquet: -	Stock22 500
TPD4164K-F	Toshiba Semiconductor and Storage	600V; IPD; 2A; HDIP30 INTELLIGEN Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (3) Interface: PWM Technology: IGBT Step Resolution: - Applications: General Purpose Current - Output: 2A Voltage - Supply: 13.5V ~ 16.5V Voltage - Load: 50V ~ 450V Operating Temperature: -40°C ~ 135°C (TJ) Mounting Type: Through Hole Package / Case: 30-PowerDIP Module Supplier Device Package: 30-HDIP	paquet: -	Stock900

2SK2993(TE24L,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 20A TO220SM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-220SM
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6 768

TK7P65W,RQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 6.8A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock16 554

2SA1837,S1CSF(J

Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

paquet: TO-220-3 Full Pack

Stock2 224

2SC3324GRTE85LF

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236

paquet: TO-236-3, SC-59, SOT-23-3

Stock2 368

RN1114(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

paquet: SC-75, SOT-416

Stock5 088

RN1306,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

paquet: SC-70, SOT-323

Stock4 176

2SC5087-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SMQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ

paquet: SC-61AA

Stock28 542

HN1B01FU-Y(L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 120MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: 6-TSSOP, SC-88, SOT-363

Stock533 208

RN1703JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ESV

Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

paquet: SOT-553

Stock6 992

TC74HC573APF

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-DIP

Logic Type: D-Type Latch
Circuit: 8:8
Output Type: Tri-State
Voltage - Supply: 2 V ~ 6 V
Independent Circuits: 1
Delay Time - Propagation: 17ns
Current - Output High, Low: 7.8mA, 7.8mA
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-DIP

paquet: 20-DIP (0.300", 7.62mm)

Stock32 382

74HC4050D(BJ)

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 6V 16SOIC

Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Number of Bits per Element: 1
Input Type: -
Output Type: -
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

paquet: 16-SOIC (0.154", 3.90mm Width)

Stock23 376

TLP179D(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 50MA 4-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 50 Ohm
Load Current: 50mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 200 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SOP (0.173", 4.40mm)
Supplier Device Package: 4-SOP (2.54mm)
Relay Type: Relay

paquet: 4-SOP (0.173", 4.40mm)

Stock4 698

TB67B000FG,EL

Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC SENSOR

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 42-SOP (0.330", 8.40mm Width), 34 Leads, Exposed Pad
Supplier Device Package: 34-P-HSSOP

paquet: 42-SOP (0.330", 8.40mm Width), 34 Leads, Exposed Pad

Stock12 210

TB62208FTG,C8,EL

Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER IC 40V/1.8A

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: DMOS
Step Resolution: 1, 1/2
Applications: General Purpose
Current - Output: 1.8A
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

paquet: 48-VFQFN Exposed Pad

Stock34 530

74HC139D

Toshiba Semiconductor and Storage

IC DECODER/DEMUX DUAL 16SOIC

Type: Decoder/Demultiplexer
Circuit: 1 x 2:4
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

paquet: 16-SOIC (0.154", 3.90mm Width)

Stock16 080

74HCT04D

Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14SOIC

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: -
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 4mA, 4mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 16ns @ 5.5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)

paquet: 14-SOIC (0.154", 3.90mm Width)

Stock30 000

TCR4DG25,LF

Toshiba Semiconductor and Storage

X34 LDO REGULATORS VOUT: 2.5V IO

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.347V @ 420mA
Current - Output: 420mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-WCSPE (0.65x0.65)

paquet: 4-XFBGA, CSPBGA

Stock97 134

CMG07-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -

paquet: -

Request a Quote

TCR2LE09-LM-CT

Toshiba Semiconductor and Storage

PB-F WCSP4 CMOS LDO DDRULATOR

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.9V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.48V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

paquet: -

Request a Quote

TW015N120C-S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 15MO

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 431W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

paquet: -

Stock81

CRF02-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 500MA S-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: -

Stock8 454

TTA008B-Q

Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR TO-126 PC=

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 1.5 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126N

paquet: -

Stock69

SSM3J35CT-L3F

Toshiba Semiconductor and Storage

MOSFET P-CHANNEL 20V 100MA CST3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: CST3
Package / Case: SC-101, SOT-883

paquet: -

Stock18 624

RN2901-LF-CT

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: -

Stock18

TCR3LM33A-RF

Toshiba Semiconductor and Storage

LDO IOUT: 300MA PD: 420MW VIN: 6

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.251V @ 200mA
Current - Output: 300mA
Current - Quiescent (Iq): 2.2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

paquet: -

Stock29 970

TCR5RG09A-LF

Toshiba Semiconductor and Storage

LDO REG, IOUT: 500MA VOUT:0.9V A

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.9V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): 13 µA
Current - Supply (Max): -
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WCSPF (0.65x0.65)

paquet: -

Stock750

RN1410-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

paquet: -

Stock22 500

TPD4164K-F

Toshiba Semiconductor and Storage

600V; IPD; 2A; HDIP30 INTELLIGEN

Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (3)
Interface: PWM
Technology: IGBT
Step Resolution: -
Applications: General Purpose
Current - Output: 2A
Voltage - Supply: 13.5V ~ 16.5V
Voltage - Load: 50V ~ 450V
Operating Temperature: -40°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: 30-PowerDIP Module
Supplier Device Package: 30-HDIP

paquet: -

Stock900