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Produits Toshiba Semiconductor and Storage

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2SK3670(T6CANO,F,M
Toshiba Semiconductor and Storage

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92MOD
  • Package / Case: TO-226-3, TO-92-3 Long Body
paquet: TO-226-3, TO-92-3 Long Body
Stock6 816
TPC6010-H(TE85L,FM
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 6.1A VS6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VS-6 (2.9x2.8)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
paquet: SOT-23-6 Thin, TSOT-23-6
Stock6 688
TPCA8008-H(TE12L,Q
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 4A 8-SOPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 580 mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: 8-PowerVDFN
Stock6 416
SSM3K7002KFU,LF
Toshiba Semiconductor and Storage

LOAD SWITCH CURRENT REDUCTION

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Stock3 712
TK100E10N1,S1X
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 100A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 255W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock19 974
2SC2235-Y,T6KEHF(M
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock6 560
2SC2235-Y(T6FJT,FM
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock7 472
RN1441ATE85LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 5.6K
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 30MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: TO-236-3, SC-59, SOT-23-3
Stock27 936
TCK303G,LF
Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH 9WCSP

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 2.3 V ~ 28 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 3A
  • Rds On (Typ): 73 mOhm
  • Input Type: -
  • Features: Slew Rate Controlled, Status Flag
  • Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 9-UFBGA, WLCSP
  • Supplier Device Package: 9-WCSP
paquet: 9-UFBGA, WLCSP
Stock36 534
TB62752BFUG,EL
Toshiba Semiconductor and Storage

IC LED DRIVER RGLTR DIM SOT23-6

  • Type: DC DC Regulator
  • Topology: Step-Up (Boost)
  • Internal Switch(s): Yes
  • Number of Outputs: 1
  • Voltage - Supply (Min): 2.8V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: -
  • Current - Output / Channel: 20mA
  • Frequency: 1MHz
  • Dimming: PWM
  • Applications: Backlight
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
paquet: SOT-23-6
Stock5 088
TC74LCX08FTELM
Toshiba Semiconductor and Storage

IC GATE AND 4CH 2-INP 14-TSSOP

  • Logic Type: AND Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 3.6 V
  • Current - Quiescent (Max): 10µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.8V
  • Logic Level - High: 2V
  • Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
paquet: 14-TSSOP (0.173", 4.40mm Width)
Stock4 480
74LCX05FT(AE)
Toshiba Semiconductor and Storage

IC INVERTER HEX 14TSSOP

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: Open Drain
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 10µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.7 V ~ 0.8 V
  • Logic Level - High: 1.7 V ~ 2 V
  • Max Propagation Delay @ V, Max CL: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
paquet: 14-TSSOP (0.173", 4.40mm Width)
Stock26 604
TC7WH241FUTE12LF
Toshiba Semiconductor and Storage

IC BUS BUFFER TRI-ST DUAL SM8

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: SM8
paquet: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Stock2 864
DF2S20FS,L3M
Toshiba Semiconductor and Storage

TVS DIODE 15VWM

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 15V (Max)
  • Voltage - Breakdown (Min): 18.8V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 9pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-923
  • Supplier Device Package: SOD-923
paquet: SOD-923
Stock105 096
TLP592G(F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 3MA 6-DIP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 50 Ohm
  • Load Current: 110mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 350 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 6-DIP (0.300", 7.62mm)
  • Supplier Device Package: 6-DIP
  • Relay Type: Relay
paquet: 6-DIP (0.300", 7.62mm)
Stock2 502
TLP291(TP,E)
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 400% @ 5mA
  • Turn On / Turn Off Time (Typ): 7µs, 7µs
  • Rise / Fall Time (Typ): 4µs, 7µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOIC (0.179", 4.55mm)
  • Supplier Device Package: 4-SO
paquet: 4-SOIC (0.179", 4.55mm)
Stock45 252
TLP2362(TPR,E
Toshiba Semiconductor and Storage

OPTOISO 3.75KV OPEN COLL SO6-5

  • Number of Channels: 1
  • Inputs - Side 1/Side 2: 1/0
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 20kV/µs
  • Input Type: DC
  • Output Type: Open Collector
  • Current - Output / Channel: 25mA
  • Data Rate: 10MBd
  • Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
  • Rise / Fall Time (Typ): 30ns, 30ns
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 25mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
  • Supplier Device Package: 6-SO, 5 Lead
paquet: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Stock3 924
TCR15AG33,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 1.5A 6WCSP

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.648V @ 1.5A
  • Current - Output: 1.5A
  • Current - Quiescent (Iq): 40µA
  • Current - Supply (Max): -
  • PSRR: 95dB ~ 60dB (1kHz)
  • Control Features: Enable
  • Protection Features: Current Limit, Thermal Shutdown, UVLO
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: 6-WCSP (1.2x0.80)
paquet: 6-XFBGA, WLCSP
Stock5 664
TCR3DG31,LF
Toshiba Semiconductor and Storage

300MA LDO VOUT=3.1V DROPOUT=195M

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.235V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Inrush Current, Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, CSPBGA
  • Supplier Device Package: 4-WCSPE (0.65x0.65)
paquet: 4-XFBGA, CSPBGA
Stock5 152
TCR2LN27,LF
Toshiba Semiconductor and Storage

200MA LDO VOUT=2.7V DROPOUT=200M

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.7V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.36V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 2µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
paquet: 4-XFDFN Exposed Pad
Stock85 224
TMPM4G9FEFG(DBB)
Toshiba Semiconductor and Storage

TXZ FAMILY MCU

  • Core Processor: ARM® Cortex®-M4F
  • Core Size: 32-Bit
  • Speed: 160MHz
  • Connectivity: CEC, EBI/EMI, I²C, IrDA, SIO, SPI, SMIF, UART/USART
  • Peripherals: DMA, LVD, POR, WDT
  • Number of I/O: 150
  • Program Memory Size: 768KB (768K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 32K x 8
  • RAM Size: 128K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
  • Data Converters: A/D 24x12b; D/A 2x8b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x14)
paquet: 100-LQFP
Stock4 816
RN1417-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: -
Stock3 210
TW015Z120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247-4L 1

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 11.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 431W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
paquet: -
Stock360
TC7SET17FTE85LF
Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 5.5V SMV

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: Schmitt Trigger
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
paquet: -
Stock2 277
SSM3J377R-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET PCH 20V 3.9A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: -
Stock16 590
TCR2EF125-LM-CT
Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.25V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.57V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 60 µA
  • Current - Supply (Max): -
  • PSRR: 73dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
paquet: -
Stock3 735
TPH4R008QM-LQ
Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR SOP8-ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
paquet: -
Stock11 634
RN1104-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
paquet: -
Stock13 470