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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A CST3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CST3
- Package / Case: SC-101, SOT-883
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paquet: SC-101, SOT-883 |
Stock960 000 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 2.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2 416 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 9A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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paquet: 8-PowerVDFN |
Stock3 312 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 9.3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 560 mOhm @ 4.6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock16 596 |
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Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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paquet: TO-220-3 Full Pack |
Stock4 720 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ESV
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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paquet: SOT-553 |
Stock7 184 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.2W US6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: US6
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paquet: SC-101, SOT-883 |
Stock23 706 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 150MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -30°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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paquet: TO-226-3, TO-92-3 Long Body |
Stock2 736 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 150MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -30°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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paquet: TO-226-3, TO-92-3 Long Body |
Stock3 184 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 15MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 15mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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paquet: TO-226-3, TO-92-3 Long Body |
Stock6 800 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 100MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 100mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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paquet: TO-226-3, TO-92-3 Long Body |
Stock7 456 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 100MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 100mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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paquet: TO-226-3, TO-92-3 Long Body |
Stock4 864 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 2.7V 200MA SMV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.7V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 2µA
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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paquet: SC-74A, SOT-753 |
Stock21 720 |
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Toshiba Semiconductor and Storage |
IC REG BUCK ADJ 2.5A SYNC 8SOPA
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.7V
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 5.5V
- Current - Output: 2.5A
- Frequency - Switching: 800kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-SOP Advance (5x5)
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paquet: 8-PowerVDFN |
Stock4 560 |
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Toshiba Semiconductor and Storage |
IC GATE NAND 4CH 2-INP 14TSSOP
- Logic Type: NAND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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paquet: 14-TSSOP (0.173", 4.40mm Width) |
Stock6 144 |
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Toshiba Semiconductor and Storage |
IC GATE AND 4CH 2-INP 14-TSSOP
- Logic Type: AND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 1.2 V ~ 3.6 V
- Current - Quiescent (Max): 20µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.8V
- Logic Level - High: 2V
- Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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paquet: 14-TSSOP (0.173", 4.40mm Width) |
Stock18 912 |
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Toshiba Semiconductor and Storage |
IC BUFF/DVR 8BIT LOW V 20TSSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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paquet: 20-TSSOP (0.173", 4.40mm Width) |
Stock4 640 |
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Toshiba Semiconductor and Storage |
IC MUX/DEMUX 4X1 TSSOP
- Switch Circuit: SP4T
- Multiplexer/Demultiplexer Circuit: 4:1
- Number of Circuits: 2
- On-State Resistance (Max): 160 Ohm
- Channel-to-Channel Matching (ΔRon): 4 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 18 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): -
- -3db Bandwidth: 30MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
- Current - Leakage (IS(off)) (Max): 100nA
- Crosstalk: -50dB @ 1.5MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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paquet: 16-TSSOP (0.173", 4.40mm Width) |
Stock15 966 |
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Toshiba Semiconductor and Storage |
TVS DIODE 5VWM 13VC SC2
- Type: Steering (Rail to Rail)
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5V (Max)
- Voltage - Breakdown (Min): 6V
- Voltage - Clamping (Max) @ Ipp: 13V (Typ)
- Current - Peak Pulse (10/1000µs): 1A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 0.2pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: SC2
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paquet: 0201 (0603 Metric) |
Stock3 528 |
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Toshiba Semiconductor and Storage |
IC RF TXRX BLUETOOTH 64-FBGA
- Type: TxRx Only
- RF Family/Standard: Bluetooth
- Protocol: Bluetooth v4.0
- Modulation: -
- Frequency: 2.4GHz
- Data Rate (Max): 2Mbps
- Power - Output: 2dBm
- Sensitivity: -90dBm
- Memory Size: -
- Serial Interfaces: I2C, SPI, UART
- GPIO: -
- Voltage - Supply: 1.8 V ~ 3.6 V
- Current - Receiving: 63mA
- Current - Transmitting: 63mA
- Operating Temperature: -40°C ~ 85°C
- Package / Case: 64-FBGA
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paquet: 64-FBGA |
Stock17 772 |
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Toshiba Semiconductor and Storage |
OPTOISOLATR 5KV TRANSISTOR 4-DIP
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Current Transfer Ratio (Min): 100% @ 1mA
- Current Transfer Ratio (Max): 1200% @ 1mA
- Turn On / Turn Off Time (Typ): 10µs, 8µs
- Rise / Fall Time (Typ): 8µs, 8µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 55V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 60mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: 4-DIP
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paquet: 4-DIP (0.300", 7.62mm) |
Stock18 132 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 50% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (4 Leads), Gull Wing
- Supplier Device Package: 6-SO, 4 Lead
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paquet: 6-SMD (4 Leads), Gull Wing |
Stock3 960 |
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Toshiba Semiconductor and Storage |
IC GATE AND 2CH 4-INP 14SOIC
- Logic Type: AND Gate
- Number of Circuits: 2
- Number of Inputs: 4
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOIC
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
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paquet: 14-SOIC (0.154", 3.90mm Width) |
Stock5 264 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 120A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 210W (Tc)
- Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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paquet: - |
Stock94 530 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q TR NPNX2 Q1BSR=22KOHM
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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paquet: - |
Stock24 000 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 30A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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paquet: - |
Stock11 886 |
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Toshiba Semiconductor and Storage |
TRANS NPN 375V 1.5A PW-MOLD2
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 375 V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA
- Current - Collector Cutoff (Max): 50µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 1.1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Stub Leads, IPAK
- Supplier Device Package: PW-MOLD2
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paquet: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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paquet: - |
Stock17 940 |
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