Produits Toshiba Semiconductor and Storage

SSM3J129TU(TE85L)

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4.6A UFM

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 46 mOhm @ 3A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UFM
• Package / Case: 3-SMD, Flat Leads

paquet: 3-SMD, Flat Leads

TPC8018-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 18A SOP8 2-6J1B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2265pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP (5.5x6.0)
• Package / Case: 8-SOIC (0.173", 4.40mm Width)

paquet: 8-SOIC (0.173", 4.40mm Width)

TJ80S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 80A DPAK-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 10V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 40A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

TK17N65W,S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 17.3A T0247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 900µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 165W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

paquet: TO-247-3

TK100E08N1,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 100A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 255W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

paquet: TO-220-3

2SA1020-Y(T6FJT,AF

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

paquet: TO-226-3, TO-92-3 Long Body

2SC3138-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN 200V 0.05A S-MINI

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 200V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
• Power - Max: 150mW
• Frequency - Transition: 100MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236

paquet: TO-236-3, SC-59, SOT-23-3

RN4981FE,LF(CB

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

paquet: SOT-563, SOT-666

TCK22972G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.1 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 25 mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Reverse Current
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UFBGA, WLCSP
• Supplier Device Package: 6-WCSPE (0.80x1.2)

paquet: 6-UFBGA, WLCSP

TB6549PG(O)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16DIP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: PWM, Serial
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 3.5A
• Voltage - Supply: 10 V ~ 27 V
• Voltage - Load: 10 V ~ 27 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

paquet: 16-DIP (0.300", 7.62mm)

TC7LX1102WBG(EL,AH

Toshiba Semiconductor and Storage

BUS TRANCEIVER 8WCSP

• Translator Type: Voltage Level
• Channel Type: Bidirectional
• Number of Circuits: 1
• Channels per Circuit: 2
• Voltage - VCCA: 1.2V ~ 3.6V
• Voltage - VCCB: 1.2V ~ 3.6V
• Input Signal: -
• Output Signal: -
• Output Type: -
• Data Rate: 200Mbps
• Operating Temperature: -40°C ~ 85°C (TA)
• Features: Auto-Direction Sensing
• Mounting Type: Surface Mount
• Package / Case: 8-UFBGA, WLCSP
• Supplier Device Package: 8-WCSP (0.80x1.6)

paquet: 8-UFBGA, WLCSP

TC7WPB9307FK(T5L,F

Toshiba Semiconductor and Storage

IC BUS SWITCH SPST DUAL US8

• Type: Bus Switch
• Circuit: 2 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Dual Supply
• Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: US8

paquet: 8-VFSOP (0.091", 2.30mm Width)

TC74VHC245F(EL,K,F

Toshiba Semiconductor and Storage

IC BUS TRANSCVR 8BIT 20SOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOP

paquet: 20-SOIC (0.295", 7.50mm Width)

TD62004AFG,N,EL

Toshiba Semiconductor and Storage

IC DRIVER DARL SINK 7-CH 16-SOP

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 7/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 0 V ~ 50 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 16-SOP

paquet: 16-SOIC (0.173", 4.40mm Width)

TL2FL-LL1,L

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 2700K 2SMD

• Color: White, Warm
• CCT (K): 2700K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 21 lm (19 lm ~ 22 lm)
• Current - Test: 65mA
• Voltage - Forward (Vf) (Typ): 2.82V
• Lumens/Watt @ Current - Test: 115 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 100mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3014 Metric)
• Supplier Device Package: 3014
• Size / Dimension: 0.118" L x 0.055" W (3.00mm x 1.40mm)
• Height - Seated (Max): 0.030" (0.77mm)

paquet: 1206 (3014 Metric)

TLP197GA(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 400V 6SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 400 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SOP (0.173", 4.40mm)
• Supplier Device Package: 6-SOP (2.54mm)
• Relay Type: Relay

paquet: 6-SOP (0.173", 4.40mm)

TLP185(YH-TPL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 75% @ 5mA
• Current Transfer Ratio (Max): 150% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead

paquet: 6-SMD (4 Leads), Gull Wing

TLP291(BL-TP,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 200% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

paquet: 4-SOIC (0.179", 4.55mm)

TLP2748(TP,E

Toshiba Semiconductor and Storage

OPTOISO 5KV PUSH PULL SO6L

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 30kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 50mA
• Data Rate: -
• Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
• Rise / Fall Time (Typ): 3ns, 3ns
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 15mA
• Voltage - Supply: 4.5 V ~ 30 V
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 6-SO

paquet: 6-SOIC (0.295", 7.50mm Width)

74VHC9595FT

Toshiba Semiconductor and Storage

X34 PB-F 8-BIT SHIFT REGISTER/LA

• Logic Type: Shift Register
• Output Type: Push-Pull
• Number of Elements: 1
• Number of Bits per Element: 8
• Function: Serial to Parallel
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOPB

paquet: 16-TSSOP (0.173", 4.40mm Width)

CRZ10-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 10V 700MW SFLAT

• Voltage - Zener (Nom) (Vz): 10 V
• Tolerance: ±10%
• Power - Max: 700 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 6 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)

paquet: -

SSM6K819R-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q SS MOS N-CH LOGIC-LEV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP-F
• Package / Case: 6-SMD, Flat Leads

paquet: -

SSM6N36TU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A UF6

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate, 1.5V Drive
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
• Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
• Power - Max: 500mW (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Leads
• Supplier Device Package: UF6

paquet: -

TK155U65Z-RQ

Toshiba Semiconductor and Storage

DTMOS VI TOLL PD=150W F=1MHZ

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 730µA
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: TOLL
• Package / Case: 8-PowerSFN

paquet: -

RN1908-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

paquet: -

TK22A65X-S5X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
• Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

paquet: -

TJ20A10M3-STA4-Q

Toshiba Semiconductor and Storage

TJ20A10M3(STA4,Q

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

paquet: -

Request a Quote

TPH1500CNH1-LQ

Toshiba Semiconductor and Storage

150V U-MOS VIII-H SOP-ADVANCE(N)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
• Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5.75)
• Package / Case: 8-PowerTDFN

paquet: -

Request a Quote