Page 149 - Produits Toshiba Semiconductor and Storage

Référence	Fabricant	Description	paquet	Stock
TK4A60DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 3.5A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	paquet: TO-220-3 Full Pack	Stock7 680
TPCP8004(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 8.3A PS-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 4.2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PS-8 (2.9x2.4) Package / Case: 8-SMD, Flat Lead	paquet: 8-SMD, Flat Lead	Stock2 720
TK13A55DA(STA4,QM)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 12.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	paquet: TO-220-3 Full Pack	Stock7 216
SSM6L39TU,LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.8A UF6 FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Rds On (Max) @ Id, Vgs: 143 mOhm @ 600MA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	paquet: 6-SMD, Flat Leads	Stock2 256
2SC6042,T2HOSH1Q(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 375V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 375V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	paquet: SC-71	Stock2 688
TTC0002(Q)	Toshiba Semiconductor and Storage	TRANS NPN 160V 18A TO-3PL Transistor Type: NPN Current - Collector (Ic) (Max): 18A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 180W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	paquet: TO-3PL	Stock5 424
2SC6026CT-Y(TPL3)	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.1A CST3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	paquet: SC-101, SOT-883	Stock3 376
RN1313(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.15W USM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	paquet: SC-70, SOT-323	Stock5 312
RN1115MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SOT723 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	paquet: SOT-723	Stock79 776
RN4987FE,LF(CB	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	paquet: SOT-563, SOT-666	Stock6 448
1SV307(TPH3,F)	Toshiba Semiconductor and Storage	SWITCHING DIODE 30V 2 USC Diode Type: Standard - Single Voltage - Peak Reverse (Max): 30V Current - Max: 50mA Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Resistance @ If, F: 1.5 Ohm @ 10mA, 100MHz Power Dissipation (Max): - Operating Temperature: 125°C (TJ) Package / Case: SC-76, SOD-323 Supplier Device Package: USC	paquet: SC-76, SOD-323	Stock103 566
CMF01(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 600V 2A MFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 2V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	paquet: SOD-128	Stock2 256
THGBMHG9C8LBAWG	Toshiba Semiconductor and Storage	IC FLASH 512GBIT 52MHZ 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	paquet: 153-WFBGA	Stock6 480
TC7WH123FKTE85LF	Toshiba Semiconductor and Storage	IC MULTIVIBRATOR MONOSTABLE US8 Logic Type: Monostable Independent Circuits: 1 Schmitt Trigger Input: No Propagation Delay: 10.3ns Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: US8	paquet: 8-VFSOP (0.091", 2.30mm Width)	Stock6 640
TC74HC592APF	Toshiba Semiconductor and Storage	IC COUNTER/REG CMOS 8-BIT 16DIP Logic Type: Binary Counter Direction: Up Number of Elements: 1 Number of Bits per Element: 8 Reset: Asynchronous Timing: - Count Rate: 35MHz Trigger Type: Positive Edge Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	paquet: 16-DIP (0.300", 7.62mm)	Stock6 592
TC75S58FUTE85LF	Toshiba Semiconductor and Storage	IC COMP SNGL GP PP CMOS USV Type: General Purpose Number of Elements: 1 Output Type: Open Drain Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA Current - Quiescent (Max): 20µA CMRR, PSRR (Typ): - Propagation Delay (Max): 800ns Hysteresis: - Operating Temperature: -40°C ~ 85°C Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Supplier Device Package: USV	paquet: 5-TSSOP, SC-70-5, SOT-353	Stock44 142
DF3D6.8MFV,L3F	Toshiba Semiconductor and Storage	TVS DIODE 5VWM 15VC VESM Type: Steering (Rail to Rail) Unidirectional Channels: 2 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V (Typ) Current - Peak Pulse (10/1000µs): 1A (8/20µs) Power - Peak Pulse: - Power Line Protection: Yes Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	paquet: SOT-723	Stock5 994
TLP109(IGM-TPR,E)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 5 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 25% @ 10mA Current Transfer Ratio (Max): 75% @ 10mA Turn On / Turn Off Time (Typ): 450ns, 450ns Rise / Fall Time (Typ): - Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.64V Current - DC Forward (If) (Max): 20mA Vce Saturation (Max): - Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	paquet: 6-SOIC (0.179", 4.55mm Width) 5 Leads	Stock8 262
TC7MPB9326FT(EL)	Toshiba Semiconductor and Storage	PB-F LOW VOLTAGE/LOW POWER DUAL Type: Bus Switch Circuit: 2 x 1:2 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Dual Supply Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	paquet: 14-TSSOP (0.173", 4.40mm Width)	Stock3 312
TCR2LE28,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT2.8V DROPOUT220MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock5 616
TK1K2A60F-S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 6A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	paquet: -	Request a Quote
TCK126BG-LF	Toshiba Semiconductor and Storage	LOAD SWITCH IC, V=1.0V-5.5V, IOU Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Rds On (Typ): 343mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-WCSPG (0.65x0.65)	paquet: -	Stock10 014
2SA2060-TE12L-ZF	Toshiba Semiconductor and Storage	TRANS PNP 50V 2A PW-MINI Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	paquet: -	Request a Quote
SSM3J375F-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 2A S-MINI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V Vgs (Max): +6V, -8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	paquet: -	Stock68 580
TCR2EN30-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=3.0V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3V Voltage - Output (Max): - Voltage Dropout (Max): 0.18V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	paquet: -	Stock59 850
2SC4116-GR-LXHF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A SC70 Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100 mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	paquet: -	Stock17 790
CRS20I40B-TE85L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 2A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 62pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	paquet: -	Stock2 514
TKR74F04PB-LXGQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 250A TO220SM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 250A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-220SM(W) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	paquet: -	Stock6 852

TK4A60DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.5A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

paquet: TO-220-3 Full Pack

Stock7 680

TPCP8004(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 8.3A PS-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 4.2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PS-8 (2.9x2.4)
Package / Case: 8-SMD, Flat Lead

paquet: 8-SMD, Flat Lead

Stock2 720

TK13A55DA(STA4,QM)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 12.5A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

paquet: TO-220-3 Full Pack

Stock7 216

SSM6L39TU,LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A UF6

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Rds On (Max) @ Id, Vgs: 143 mOhm @ 600MA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Power - Max: 500mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

paquet: 6-SMD, Flat Leads

Stock2 256

2SC6042,T2HOSH1Q(J

Toshiba Semiconductor and Storage

TRANS NPN 1A 375V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 375V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

paquet: SC-71

Stock2 688

TTC0002(Q)

Toshiba Semiconductor and Storage

TRANS NPN 160V 18A TO-3PL

Transistor Type: NPN
Current - Collector (Ic) (Max): 18A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 180W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)

paquet: TO-3PL

Stock5 424

2SC6026CT-Y(TPL3)

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.1A CST3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

paquet: SC-101, SOT-883

Stock3 376

RN1313(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W USM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

paquet: SC-70, SOT-323

Stock5 312

RN1115MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT723

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

paquet: SOT-723

Stock79 776

RN4987FE,LF(CB

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

paquet: SOT-563, SOT-666

Stock6 448

1SV307(TPH3,F)

Toshiba Semiconductor and Storage

SWITCHING DIODE 30V 2 USC

Diode Type: Standard - Single
Voltage - Peak Reverse (Max): 30V
Current - Max: 50mA
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5 Ohm @ 10mA, 100MHz
Power Dissipation (Max): -
Operating Temperature: 125°C (TJ)
Package / Case: SC-76, SOD-323
Supplier Device Package: USC

paquet: SC-76, SOD-323

Stock103 566

CMF01(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 2A MFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 2V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: SOD-128

Stock2 256

THGBMHG9C8LBAWG

Toshiba Semiconductor and Storage

IC FLASH 512GBIT 52MHZ 153WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: MMC
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

paquet: 153-WFBGA

Stock6 480

TC7WH123FKTE85LF

Toshiba Semiconductor and Storage

IC MULTIVIBRATOR MONOSTABLE US8

Logic Type: Monostable
Independent Circuits: 1
Schmitt Trigger Input: No
Propagation Delay: 10.3ns
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Supplier Device Package: US8

paquet: 8-VFSOP (0.091", 2.30mm Width)

Stock6 640

TC74HC592APF

Toshiba Semiconductor and Storage

IC COUNTER/REG CMOS 8-BIT 16DIP

Logic Type: Binary Counter
Direction: Up
Number of Elements: 1
Number of Bits per Element: 8
Reset: Asynchronous
Timing: -
Count Rate: 35MHz
Trigger Type: Positive Edge
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

paquet: 16-DIP (0.300", 7.62mm)

Stock6 592

TC75S58FUTE85LF

Toshiba Semiconductor and Storage

IC COMP SNGL GP PP CMOS USV

Type: General Purpose
Number of Elements: 1
Output Type: Open Drain
Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Current - Quiescent (Max): 20µA
CMRR, PSRR (Typ): -
Propagation Delay (Max): 800ns
Hysteresis: -
Operating Temperature: -40°C ~ 85°C
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Supplier Device Package: USV

paquet: 5-TSSOP, SC-70-5, SOT-353

Stock44 142

DF3D6.8MFV,L3F

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 15VC VESM

Type: Steering (Rail to Rail)
Unidirectional Channels: 2
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V (Typ)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: Yes
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

paquet: SOT-723

Stock5 994

TLP109(IGM-TPR,E)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 5 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 25% @ 10mA
Current Transfer Ratio (Max): 75% @ 10mA
Turn On / Turn Off Time (Typ): 450ns, 450ns
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 20V
Current - Output / Channel: 8mA
Voltage - Forward (Vf) (Typ): 1.64V
Current - DC Forward (If) (Max): 20mA
Vce Saturation (Max): -
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

paquet: 6-SOIC (0.179", 4.55mm Width) 5 Leads

Stock8 262

TC7MPB9326FT(EL)

Toshiba Semiconductor and Storage

PB-F LOW VOLTAGE/LOW POWER DUAL

Type: Bus Switch
Circuit: 2 x 1:2
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Dual Supply
Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

paquet: 14-TSSOP (0.173", 4.40mm Width)

Stock3 312

TCR2LE28,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT2.8V DROPOUT220MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock5 616

TK1K2A60F-S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 6A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

paquet: -

Request a Quote

TCK126BG-LF

Toshiba Semiconductor and Storage

LOAD SWITCH IC, V=1.0V-5.5V, IOU

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-WCSPG (0.65x0.65)

paquet: -

Stock10 014

2SA2060-TE12L-ZF

Toshiba Semiconductor and Storage

TRANS PNP 50V 2A PW-MINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

paquet: -

Request a Quote

SSM3J375F-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A S-MINI

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Vgs (Max): +6V, -8V
FET Feature: -
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: -

Stock68 580

TCR2EN30-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.0V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.18V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

paquet: -

Stock59 850

2SC4116-GR-LXHF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SC70

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100 mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

paquet: -

Stock17 790

CRS20I40B-TE85L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 2A S-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)

paquet: -

Stock2 514

TKR74F04PB-LXGQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 250A TO220SM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: TO-220SM(W)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

paquet: -

Stock6 852