Produits Toshiba Semiconductor and Storage

2SJ168TE85LF

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 0.2A S-MINI

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200mW (Ta)
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-59
• Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

2SK209-Y(TE85L,F)

Toshiba Semiconductor and Storage

JFET N-CH SOT23

• Transistor Type: N-Channel JFET
• Frequency: 1kHz
• Gain: -
• Voltage - Test: 10V
• Current Rating: -
• Noise Figure: 1dB
• Current - Test: 500µA
• Power - Output: -
• Voltage - Rated: -
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59

paquet: TO-236-3, SC-59, SOT-23-3

2SC5549,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 1A 400V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 400V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 25mA, 200mA
• Current - Collector Cutoff (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 40mA, 5V
• Power - Max: 900mW
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

paquet: TO-226-3, TO-92-3 Long Body

2SA1930,CKQ(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 180V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 180V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
• Current - Collector Cutoff (Max): 5µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 2W
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

paquet: TO-220-3 Full Pack

2SC2705-O(TE6,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 150V 0.05A TO-92MOD

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

paquet: TO-226-3, TO-92-3 Long Body

TTC012(Q)

Toshiba Semiconductor and Storage

TRANS NPN 375V 2A PW MOLD2

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 375V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
• Power - Max: 1.1W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: PW-MOLD2

paquet: TO-251-3 Short Leads, IPak, TO-251AA

2SC4117-BL,LF

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A SOT323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 100MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

paquet: SC-70, SOT-323

RN4908(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

paquet: 6-TSSOP, SC-88, SOT-363

RN1971FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

paquet: SOT-563, SOT-666

HN1D01F(TE85L,F)

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SM6

• Diode Configuration: 2 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SM6

paquet: SC-74, SOT-457

1SS398TE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 400V 100MA SMINI

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 100nA @ 400V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

paquet: TO-236-3, SC-59, SOT-23-3

TA76432S,T6F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 15MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 15mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

paquet: TO-226-3, TO-92-3 Long Body

TCR3DM36,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3.6V 300MA 4DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.6V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 65µA ~ 78µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

paquet: 4-UDFN Exposed Pad

TB67H400AFTG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48WQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel, PWM
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 6A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 47 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-WFQFN Exposed Pad
• Supplier Device Package: 48-WQFN (7x7)

paquet: 48-WFQFN Exposed Pad

TC78B002FNG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PWM 16SSOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: PWM
• Technology: DMOS
• Step Resolution: -
• Applications: Fan Motor Driver
• Current - Output: 1.5A
• Voltage - Supply: 3.5 V ~ 16 V
• Voltage - Load: 3.5 V ~ 16 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-SSOP

paquet: 16-LSSOP (0.173", 4.40mm Width)

TC62D749CFG,C,EL,B

Toshiba Semiconductor and Storage

IC LED DRVR CONST CURR 24SSOP

• Type: Linear
• Topology: Shift Register
• Internal Switch(s): Yes
• Number of Outputs: 16
• Voltage - Supply (Min): 3V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 17V
• Current - Output / Channel: 90mA
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-SOP (0.236", 6.00mm Width)
• Supplier Device Package: 24-SSOP

paquet: 24-SOP (0.236", 6.00mm Width)

DF3A5.6F,LF

Toshiba Semiconductor and Storage

TVS DIODE 2.5VWM S-MINI

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 2.5V
• Voltage - Breakdown (Min): 5.3V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 65pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

paquet: TO-236-3, SC-59, SOT-23-3

TB67H410NG

Toshiba Semiconductor and Storage

BRUSHED MOTOR DRIVER IC 2-CHANNE

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: 24-SDIP (0.300", 7.62mm)
• Supplier Device Package: 24-SDIP

paquet: 24-SDIP (0.300", 7.62mm)

74HC132D

Toshiba Semiconductor and Storage

IC GATE NAND SCHMITT 4CH 14SOIC

• Logic Type: NAND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: Schmitt Trigger
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 19ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOIC
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

paquet: 14-SOIC (0.154", 3.90mm Width)

TCR2LN285,LF

Toshiba Semiconductor and Storage

200MA LDO VOUT=2.85V DROPOUT=200

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.85V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.36V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

paquet: 4-XFDFN Exposed Pad

TCR2LN085,LF

Toshiba Semiconductor and Storage

200MA LDO VOUT=0.85V DROPOUT=200

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.85V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.56V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

paquet: 4-XFDFN Exposed Pad

TK1K9A60F-S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.7A TO220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 400µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.9A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

paquet: -

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TCR2DG19-LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.17V @ 100mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 70 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UFBGA, WLCSP
• Supplier Device Package: 4-WCSP (0.79x0.79)

paquet: -

Request a Quote

TDTC143E-LM

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 320 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

paquet: -

CMC02-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)
• Operating Temperature - Junction: -40°C ~ 150°C

paquet: -

Request a Quote

TK17A65W5-S5X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 900µA
• Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 230mOhm @ 8.7A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

paquet: -

CMS04-TE12L

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 370 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 8 mA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)
• Operating Temperature - Junction: -40°C ~ 125°C

paquet: -

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TPD4163K-F

Toshiba Semiconductor and Storage

600V; IPD; 1A; HDIP30 INTELLIGEN

• Motor Type - Stepper: Multiphase
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (3)
• Interface: PWM
• Technology: IGBT
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1A
• Voltage - Supply: 13.5V ~ 16.5V
• Voltage - Load: 50V ~ 450V
• Operating Temperature: -40°C ~ 135°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 30-PowerDIP Module
• Supplier Device Package: 30-HDIP

paquet: -