Page 114 - Produits Toshiba Semiconductor and Storage

Référence	Fabricant	Description	paquet	Stock
TPCC8066-H,LQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 11A 8TSON-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 17W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	paquet: 8-PowerVDFN	Stock3 184
TPC6110(TE85L,F,M)	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 4.5A VS6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	paquet: SOT-23-6 Thin, TSOT-23-6	Stock3 248
TK4R3E06PL,S1X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 48.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 4.5V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	paquet: TO-220-3	Stock17 868
SSM3K7002KF,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 0.4A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	paquet: TO-236-3, SC-59, SOT-23-3	Stock23 076
TK31V60X,LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 9.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (8x8) Package / Case: 4-VSFN Exposed Pad	paquet: 4-VSFN Exposed Pad	Stock19 080
2SA1869-Y(JKT,Q,M)	Toshiba Semiconductor and Storage	TRANS PNP 3A 50V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	paquet: TO-220-3 Full Pack	Stock4 688
2SA1837,F(J	Toshiba Semiconductor and Storage	TRANS PNP 1A 230V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	paquet: TO-220-3 Full Pack	Stock2 544
RN2318(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W USM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	paquet: SC-70, SOT-323	Stock2 784
RN2118MFV(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.15W VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	paquet: SOT-723	Stock7 136
RN2608(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.3W SM6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	paquet: SC-74, SOT-457	Stock4 448
RN2511(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.3W SMV Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	paquet: SC-74A, SOT-753	Stock26 274
CLS02(T6L,CANO-O,Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 420pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	paquet: L-FLAT?	Stock7 632
CUS08F30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 800MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 220mV @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	paquet: SC-76, SOD-323	Stock329 892
1SS402TE85LF	Toshiba Semiconductor and Storage	DIODE ARRAY SCHOTTKY 20V USQ Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 50mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 20V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: SC-82 Supplier Device Package: USQ	paquet: SC-82	Stock7 056
1SS423(TE85L,F)	Toshiba Semiconductor and Storage	DIODE ARRAY SCHOTTKY 40V SSM Diode Configuration: 1 Pair Series Connection Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 40V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	paquet: SC-75, SOT-416	Stock97 896
TA78DS10BP(6MB1,FM	Toshiba Semiconductor and Storage	IC REG LINEAR 30MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 30mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	paquet: TO-226-3, TO-92-3 Long Body	Stock7 728
TCR2EE18,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1.8V 200MA ESV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	paquet: SOT-553	Stock4 352
TB6560AFTG,8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48QFN Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4, 1/8, 1/16 Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 4.5 V ~ 34 V Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	paquet: 48-VFQFN Exposed Pad	Stock5 088
TC74LCX573F(EL,K,F	Toshiba Semiconductor and Storage	IC LATCH OCTAL D-TYPE 20SOP Logic Type: D-Type Transparent Latch Circuit: 8:8 Output Type: Tri-State Voltage - Supply: 1.65 V ~ 3.6 V Independent Circuits: 1 Delay Time - Propagation: 1.5ns Current - Output High, Low: 24mA, 24mA Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.209", 5.30mm Width) Supplier Device Package: 20-SOP	paquet: 20-SOIC (0.209", 5.30mm Width)	Stock34 134
TC74LCX14FT-ELK	Toshiba Semiconductor and Storage	IC INVERTER HEX SCHMITT 14-TSSOP Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: Schmitt Trigger Voltage - Supply: 1.65 V ~ 3.6 V Current - Quiescent (Max): 10µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.3 V ~ 0.6 V Logic Level - High: 1.35 V ~ 2.2 V Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	paquet: 14-TSSOP (0.173", 4.40mm Width)	Stock6 672
TC74HC273APF	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 20DIP Function: Reset Type: D-Type Output Type: Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 66MHz Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Iq): 40µA Input Capacitance: 5pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 20-DIP (0.300", 7.62mm)	paquet: 20-DIP (0.300", 7.62mm)	Stock10 920
TC7W126FUTE12LF	Toshiba Semiconductor and Storage	IC BUS BUFFER DUAL N-INV SM8 Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: SM8	paquet: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	Stock25 122
TLP185(BLL-TL,SE	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	paquet: 6-SMD (4 Leads), Gull Wing	Stock7 866
TLP716(TP,F)	Toshiba Semiconductor and Storage	OPTOISO 5KV PUSH PULL 6DIP GW Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 10kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 15MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 15ns, 15ns Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.268", 6.80mm Width) Supplier Device Package: 6-SDIP Gull Wing	paquet: 6-SOIC (0.268", 6.80mm Width)	Stock3 384
TK110A10PL-S4X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 18A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	paquet: -	Stock207
RN1310-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	paquet: -	Stock690
TPW3R70APL-L1Q	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerWDFN	paquet: -	Stock15 000
TCR2LN36-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=3.6V I=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.6V Voltage - Output (Max): - Voltage Dropout (Max): 0.28V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	paquet: -	Stock29 940

TPCC8066-H,LQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A 8TSON-ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

paquet: 8-PowerVDFN

Stock3 184

TPC6110(TE85L,F,M)

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 4.5A VS6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VS-6 (2.9x2.8)
Package / Case: SOT-23-6 Thin, TSOT-23-6

paquet: SOT-23-6 Thin, TSOT-23-6

Stock3 248

TK4R3E06PL,S1X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 48.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 4.5V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

paquet: TO-220-3

Stock17 868

SSM3K7002KF,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.4A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 270mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

Stock23 076

TK31V60X,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 98 mOhm @ 9.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (8x8)
Package / Case: 4-VSFN Exposed Pad

paquet: 4-VSFN Exposed Pad

Stock19 080

2SA1869-Y(JKT,Q,M)

Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

paquet: TO-220-3 Full Pack

Stock4 688

2SA1837,F(J

Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

paquet: TO-220-3 Full Pack

Stock2 544

RN2318(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

paquet: SC-70, SOT-323

Stock2 784

RN2118MFV(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.15W VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

paquet: SOT-723

Stock7 136

RN2608(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SM6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

paquet: SC-74, SOT-457

Stock4 448

RN2511(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

paquet: SC-74A, SOT-753

Stock26 274

CLS02(T6L,CANO-O,Q

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 420pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

paquet: L-FLAT?

Stock7 632

CUS08F30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 800MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 220mV @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

paquet: SC-76, SOD-323

Stock329 892

1SS402TE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 20V USQ

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 50mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 20V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-82
Supplier Device Package: USQ

paquet: SC-82

Stock7 056

1SS423(TE85L,F)

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 40V SSM

Diode Configuration: 1 Pair Series Connection
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 40V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

paquet: SC-75, SOT-416

Stock97 896

TA78DS10BP(6MB1,FM

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 30mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

paquet: TO-226-3, TO-92-3 Long Body

Stock7 728

TCR2EE18,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA ESV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

paquet: SOT-553

Stock4 352

TB6560AFTG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 4.5 V ~ 34 V
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

paquet: 48-VFQFN Exposed Pad

Stock5 088

TC74LCX573F(EL,K,F

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20SOP

Logic Type: D-Type Transparent Latch
Circuit: 8:8
Output Type: Tri-State
Voltage - Supply: 1.65 V ~ 3.6 V
Independent Circuits: 1
Delay Time - Propagation: 1.5ns
Current - Output High, Low: 24mA, 24mA
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 20-SOP

paquet: 20-SOIC (0.209", 5.30mm Width)

Stock34 134

TC74LCX14FT-ELK

Toshiba Semiconductor and Storage

IC INVERTER HEX SCHMITT 14-TSSOP

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: Schmitt Trigger
Voltage - Supply: 1.65 V ~ 3.6 V
Current - Quiescent (Max): 10µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.3 V ~ 0.6 V
Logic Level - High: 1.35 V ~ 2.2 V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

paquet: 14-TSSOP (0.173", 4.40mm Width)

Stock6 672

TC74HC273APF

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20DIP

Function: Reset
Type: D-Type
Output Type: Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 66MHz
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Iq): 40µA
Input Capacitance: 5pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)

paquet: 20-DIP (0.300", 7.62mm)

Stock10 920

TC7W126FUTE12LF

Toshiba Semiconductor and Storage

IC BUS BUFFER DUAL N-INV SM8

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: SM8

paquet: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

Stock25 122

TLP185(BLL-TL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Current Transfer Ratio (Max): 400% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

paquet: 6-SMD (4 Leads), Gull Wing

Stock7 866

TLP716(TP,F)

Toshiba Semiconductor and Storage

OPTOISO 5KV PUSH PULL 6DIP GW

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 10kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 10mA
Data Rate: 15MBd
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Rise / Fall Time (Typ): 15ns, 15ns
Voltage - Forward (Vf) (Typ): 1.65V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Supplier Device Package: 6-SDIP Gull Wing

paquet: 6-SOIC (0.268", 6.80mm Width)

Stock3 384

TK110A10PL-S4X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 18A, 10V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

paquet: -

Stock207

RN1310-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

paquet: -

Stock690

TPW3R70APL-L1Q

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DSO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-DSOP Advance
Package / Case: 8-PowerWDFN

paquet: -

Stock15 000

TCR2LN36-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.6V I=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.6V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.28V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

paquet: -

Stock29 940