Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 1A DP
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock72 000 |
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MOSFET (Metal Oxide) | 900V | 1A (Ta) | 10V | 4V @ 1mA | 15nC @ 10V | 350pF @ 25V | ±30V | - | 40W (Tc) | 9 Ohm @ 500mA, 10V | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 45A TO-3PN
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paquet: TO-3P-3, SC-65-3 |
Stock6 608 |
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MOSFET (Metal Oxide) | 50V | 45A (Ta) | 10V | 3.5V @ 1mA | 68nC @ 10V | 2300pF @ 10V | ±20V | - | 125W (Tc) | 20 mOhm @ 25A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 6A TO-220AB
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paquet: TO-220-3 |
Stock2 032 |
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MOSFET (Metal Oxide) | 600V | 6A (Ta) | 10V | 4V @ 1mA | 30nC @ 10V | 1300pF @ 10V | ±30V | - | 80W (Tc) | 1.25 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 25A TO220NIS
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paquet: TO-220-3 Full Pack |
Stock6 464 |
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MOSFET (Metal Oxide) | 50V | 25A (Ta) | 4V, 10V | 2V @ 1mA | 25nC @ 10V | 900pF @ 10V | ±20V | - | 30W (Tc) | 46 mOhm @ 12A, 10V | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 1000V 4A TO-220AB
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paquet: TO-220-3 |
Stock4 768 |
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MOSFET (Metal Oxide) | 1000V | 4A (Ta) | 10V | 3.5V @ 1mA | 60nC @ 10V | 700pF @ 25V | ±20V | - | 100W (Tc) | 3.8 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 5A PW-MOLD
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paquet: TO-251-3 Stub Leads, IPak |
Stock11 880 |
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MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 2V @ 1mA | 15nC @ 10V | 700pF @ 10V | ±20V | - | 20W (Ta) | 170 mOhm @ 2.5A, 10V | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 250V 2A PW-MOLD
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3 200 |
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MOSFET (Metal Oxide) | 250V | 2A (Ta) | 10V | 3.5V @ 1mA | 24nC @ 10V | 381pF @ 10V | ±20V | - | 20W (Ta) | 2.55 Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 100V 12A TO220NIS
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paquet: TO-220-3 Full Pack |
Stock3 360 |
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MOSFET (Metal Oxide) | 100V | 12A (Ta) | 4V, 10V | 2V @ 1mA | 48nC @ 10V | 1100pF @ 10V | ±20V | - | 35W (Tc) | 210 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 1A SC-62
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paquet: TO-243AA |
Stock21 480 |
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MOSFET (Metal Oxide) | 60V | 1A (Ta) | 4V, 10V | 2V @ 1mA | 6.5nC @ 10V | 155pF @ 10V | ±20V | - | 500mW (Ta) | 730 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | PW-MINI | TO-243AA |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 1A SC-62
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paquet: TO-243AA |
Stock7 328 |
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MOSFET (Metal Oxide) | 60V | 1A (Ta) | 4V, 10V | 2V @ 1mA | 6.5nC @ 10V | 155pF @ 10V | ±20V | - | 500mW (Ta) | 730 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | PW-MINI | TO-243AA |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 14A TO220NIS
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paquet: TO-220-3 Full Pack |
Stock6 992 |
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MOSFET (Metal Oxide) | 60V | 14A (Ta) | 4V, 10V | 2V @ 1mA | 45nC @ 10V | 1200pF @ 10V | ±20V | - | 40W (Tc) | 120 mOhm @ 7A, 10V | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A TO-3PN
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paquet: TO-3P-3, SC-65-3 |
Stock5 808 |
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MOSFET (Metal Oxide) | 30V | 60A (Ta) | 10V | 3V @ 1mA | 66nC @ 10V | 2300pF @ 10V | ±20V | - | 150W (Tc) | 12 mOhm @ 30A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 7.2A PS-8
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paquet: 8-SMD, Flat Lead |
Stock2 608 |
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MOSFET (Metal Oxide) | 30V | 7.2A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 11nC @ 10V | 640pF @ 10V | ±20V | - | 1W (Ta), 30W (Tc) | 16 mOhm @ 3.6A, 10V | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A VS8 2-3U1A
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paquet: 8-SMD, Flat Lead |
Stock5 312 |
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MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 4.5V | 1.2V @ 200µA | 19nC @ 5V | 1550pF @ 10V | ±8V | - | 700mW (Ta) | 30 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 36A SOP8 ADV
|
paquet: 8-PowerVDFN |
Stock6 848 |
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MOSFET (Metal Oxide) | 30V | 36A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 35nC @ 10V | 1970pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 5.6 mOhm @ 18A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 6A SOP-8 ADV
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paquet: 8-PowerVDFN |
Stock3 232 |
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MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 4.5V | 1.2V @ 200µA | 18nC @ 5V | 1600pF @ 10V | ±8V | - | 1.6W (Ta), 20W (Tc) | 33 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 40A SOP-8 ADV
|
paquet: 8-PowerVDFN |
Stock4 752 |
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MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4V, 10V | 2V @ 1mA | 184nC @ 10V | 7880pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 4.2 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 40A SOP-8 ADV
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paquet: 8-PowerVDFN |
Stock7 088 |
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MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4V, 10V | 2V @ 1mA | 109nC @ 10V | 4600pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 6 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A SOP-8 ADV
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paquet: 8-PowerVDFN |
Stock3 120 |
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MOSFET (Metal Oxide) | 30V | 24A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | ±20V | - | 1.6W (Ta), 30W (Tc) | 11 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 20A SOP-8 ADV
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paquet: 8-PowerVDFN |
Stock108 000 |
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MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | ±20V | - | 1.6W (Ta), 30W (Tc) | 12.9 mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 27A SOP-8 ADV
|
paquet: 8-PowerVDFN |
Stock5 120 |
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MOSFET (Metal Oxide) | 30V | 27A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 23nC @ 10V | 1395pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 9 mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 30A SOP-8 ADV
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paquet: 8-PowerVDFN |
Stock5 504 |
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MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 34nC @ 10V | 2846pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 6.2 mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A SOP-8 ADV
|
paquet: 8-PowerVDFN |
Stock7 216 |
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MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 42nC @ 10V | 3713pF @ 10V | ±20V | - | - | 4.9 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 40A SOP-8 ADV
|
paquet: 8-PowerVDFN |
Stock6 384 |
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MOSFET (Metal Oxide) | 20V | 40A (Ta) | 2.5V, 4.5V | 1.3V @ 200µA | 32nC @ 5V | 2900pF @ 10V | ±12V | - | 1.6W (Ta), 45W (Tc) | 3.5 mOhm @ 20A, 4.5V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 5.5A SOP-8 ADV
|
paquet: 8-PowerVDFN |
Stock3 216 |
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MOSFET (Metal Oxide) | 200V | 5.5A (Ta) | 10V | 4V @ 1mA | 10nC @ 10V | 600pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 450 mOhm @ 2.7A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4A SOP-8 ADV
|
paquet: 8-PowerVDFN |
Stock4 832 |
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MOSFET (Metal Oxide) | 250V | 4A (Ta) | 10V | 4V @ 1mA | 10nC @ 10V | 600pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 580 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 27A SOP-8 ADV
|
paquet: 8-PowerVDFN |
Stock4 224 |
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MOSFET (Metal Oxide) | 30V | 27A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 24nC @ 10V | 1395pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 9 mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 35A SOP-8 ADV
|
paquet: 8-PowerVDFN |
Stock3 664 |
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MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 25nC @ 10V | 1465pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 6.6 mOhm @ 18A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |