Page 92 - Produits Taiwan Semiconductor Corporation

Référence	Fabricant	Description	paquet	Stock
BZD27C8V2PHRVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 8.2V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 8.2V Tolerance: ±6.09% Power - Max: 1W Impedance (Max) (Zzt): 2 Ohms Current - Reverse Leakage @ Vr: 10µA @ 3V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock5 360
1N4740AHB0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 10V, 1000MW, 5%, A Voltage - Zener (Nom) (Vz): 10V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 8 Ohms Current - Reverse Leakage @ Vr: 5µA @ 8.4V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	paquet: DO-204AL, DO-41, Axial	Stock2 064
BZD17C15P RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 15V Tolerance: ±6% Power - Max: 800mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1µA @ 11V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock4 592
1M120Z B0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 120V, 1000MW, 5%, Voltage - Zener (Nom) (Vz): 120V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 550 Ohms Current - Reverse Leakage @ Vr: 5µA @ 91.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	paquet: DO-204AL, DO-41, Axial	Stock3 760
BZT52C2V7-G RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 2.7V, 350MW, 5%, S Voltage - Zener (Nom) (Vz): 2.7V Tolerance: ±5% Power - Max: 350mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 20µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	paquet: SOD-123	Stock5 152
BZT52C36S RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 36V, 200MW, 5%, SO Voltage - Zener (Nom) (Vz): 36V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 45nA @ 25.2V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	paquet: SC-90, SOD-323F	Stock7 104
BZX585B16 RSG	Taiwan Semiconductor Corporation	DIODE, ZENER, 16V, 200MW, 2%, SO Voltage - Zener (Nom) (Vz): 16V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 45nA @ 11.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	paquet: SC-79, SOD-523	Stock4 112
BZX85C11 R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 11V, 1300MW, 5%, D Voltage - Zener (Nom) (Vz): 11V Tolerance: ±5% Power - Max: 1.3W Impedance (Max) (Zzt): 8 Ohms Current - Reverse Leakage @ Vr: 500nA @ 8.2V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	paquet: DO-204AL, DO-41, Axial	Stock7 664
BZV55C39 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 39V, 500MW, 5%, MM Voltage - Zener (Nom) (Vz): 39V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 100nA @ 28V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	paquet: DO-213AC, MINI-MELF, SOD-80	Stock6 400
GBU404HD2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 4A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	paquet: 4-SIP, GBU	Stock2 928
DBLS106G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 1A DBLS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	paquet: -	Stock13 440
HS1MAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A THIN SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock18 504
2M14ZH	Taiwan Semiconductor Corporation	DIODE ZENER 14V 2W DO204AC Voltage - Zener (Nom) (Vz): 14 V Tolerance: ±5% Power - Max: 2 W Impedance (Max) (Zzt): 5.5 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 10.6 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	paquet: -	Request a Quote
SDLW	Taiwan Semiconductor Corporation	0.8A, 200V, STANDARD RECOVERY RE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock60 000
UDZS7V5B	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 7.5 V Tolerance: ±2% Power - Max: 200 mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 900 nA @ 4 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	paquet: -	Request a Quote
SS26LW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock77 187
GBL206	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 2A GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	paquet: -	Stock3 600
SS32-R6	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 125°C	paquet: -	Request a Quote
TST20L120CW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 120V 10A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 120 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote
TSPB15U50S	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 15A SMPC4.0 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.0 Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote
S4B-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock3 756
TS2937CP50	Taiwan Semiconductor Corporation	0.5A 5V ULTRA LOW DROPOUT VOLTAG Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 26V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.7V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): 25 mA PSRR: - Control Features: Current Limit Protection Features: Over Current, Over Temperature, Over Voltage Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	paquet: -	Request a Quote
SIMLRHG	Taiwan Semiconductor Corporation	GLASS PASSIVATED SMD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Request a Quote
UF1DLWH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock38 700
S5J-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote
1SMA4759H	Taiwan Semiconductor Corporation	DIODE ZENER 62V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 62 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 125 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 47.1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	paquet: -	Request a Quote
HS1BL	Taiwan Semiconductor Corporation	50NS, 1A, 100V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote
HS1GH	Taiwan Semiconductor Corporation	50NS, 1A, 400V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock45 000