Page 38 - Produits Taiwan Semiconductor Corporation

Référence	Fabricant	Description	paquet	Stock
BZD27C75PHRUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 75V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 74.5V Tolerance: ±6.04% Power - Max: 1W Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 1µA @ 56V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock4 224
BZD27C16PHRUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 16V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 16.2V Tolerance: ±5.55% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 12V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock7 200
1SMB5949 R5G	Taiwan Semiconductor Corporation	DIODE, ZENER, 100V, 3000MW, 5%, Voltage - Zener (Nom) (Vz): 100V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 250 Ohms Current - Reverse Leakage @ Vr: 1µA @ 76V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	paquet: DO-214AA, SMB	Stock2 336
2M6.8Z A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.8V, 2000MW, %, D Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 1.5 Ohms Current - Reverse Leakage @ Vr: 1mA @ 5.5V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	paquet: DO-204AC, DO-15, Axial	Stock5 088
BZD27C15P RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 14.7V Tolerance: ±6.12% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1µA @ 11V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock4 816
BZD27C33PHMTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 33V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 33V Tolerance: ±6.06% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 24V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock4 592
BZD27C51PHMQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 51V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 51V Tolerance: ±5.88% Power - Max: 1W Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1µA @ 39V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock3 408
MMSZ5260B RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 43V, 500MW, 5%, SO Voltage - Zener (Nom) (Vz): 43V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 93 Ohms Current - Reverse Leakage @ Vr: 100nA @ 33V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	paquet: SOD-123F	Stock6 544
BZS55B3V3 RXG	Taiwan Semiconductor Corporation	DIODE, ZENER, 3.3V, 500MW, 2%, 1 Voltage - Zener (Nom) (Vz): 3.3V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 2µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206	paquet: 1206 (3216 Metric)	Stock7 328
TS25P05GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 25A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	paquet: 4-SIP, TS-6P	Stock2 736
GBU602HD2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 6A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	paquet: 4-SIP, GBU	Stock6 544
BZD27C16PW	Taiwan Semiconductor Corporation	DIODE ZENER 16V 1W SOD123W Voltage - Zener (Nom) (Vz): 16 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 12 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W	paquet: -	Stock60 000
MBR20150PT	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 150V 20A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P)	paquet: -	Request a Quote
PE4DC	Taiwan Semiconductor Corporation	20NS, 4A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 72pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock9 000
BZD27C18PWH	Taiwan Semiconductor Corporation	DIODE ZENER 18V 1W SOD123W Voltage - Zener (Nom) (Vz): 18 V Tolerance: ±6.4% Power - Max: 1 W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 13 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W	paquet: -	Stock133 029
BZY55B27-RBG	Taiwan Semiconductor Corporation	DIODE ZENER 27V 500MW 0805 Voltage - Zener (Nom) (Vz): 27 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 20 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	paquet: -	Request a Quote
RS1BL	Taiwan Semiconductor Corporation	DIODE GP 100V 800MA SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock73 683
BZX79B18	Taiwan Semiconductor Corporation	DO-35, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 18 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 0.05 µA @ 12.6 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	paquet: -	Request a Quote
TS40P05G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 40A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	paquet: -	Stock3 585
BZX584B4V3-RSG	Taiwan Semiconductor Corporation	SOD-523F, 150MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 4.3 V Tolerance: ±2% Power - Max: 150 mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 3 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	paquet: -	Stock24 000
1SMA160ZH	Taiwan Semiconductor Corporation	DIODE ZENER 160V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 160 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 1100 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	paquet: -	Request a Quote
HER3003PT	Taiwan Semiconductor Corporation	DIODE ARRAY GP 200V 30A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io) (per Diode): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P)	paquet: -	Request a Quote
KBP155G-C2	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 1.5A KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	paquet: -	Request a Quote
TST30U45C	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 15A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote
UDZS13B	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 13 V Tolerance: ±2% Power - Max: 200 mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 10 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	paquet: -	Request a Quote
UF1DLW	Taiwan Semiconductor Corporation	20NS, 1A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock60 000
KBP104G-C2	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 1A KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	paquet: -	Request a Quote
TSM035NB04LCZ-C0G	Taiwan Semiconductor Corporation	40V, 157A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	paquet: -	Stock11 964