Produits Taiwan Semiconductor Corporation

BZD27C100PHMTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 100V, 1000MW, %, A

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±6%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

paquet: DO-219AB

BZD27C160P RTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 160V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 162V
• Tolerance: ±5.55%
• Power - Max: 1W
• Impedance (Max) (Zzt): 350 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 120V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

paquet: DO-219AB

ZM4747A L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 1000MW, 5%, M

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF

paquet: DO-213AB, MELF

BZT52C33 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 500MW, 5%, SO

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

paquet: SOD-123F

BZT52B5V1-G RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 5.1V, 410MW, 2%, S

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

paquet: SOD-123

BZX84C6V8 RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 6.8V, 300MW, 5%, S

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 4V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

paquet: TO-236-3, SC-59, SOT-23-3

BZD27C7V5P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 7.5V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 7.45V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

paquet: DO-219AB

TS8P05GHD2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

paquet: 4-SIP, TS-6P

TS6P06G D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

paquet: 4-SIP, TS-6P

GBLA06 D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBL
• Supplier Device Package: GBL

paquet: 4-SIP, GBL

TQM070NH04CR-RLG

Taiwan Semiconductor Corporation

40V, 54A, SINGLE N-CHANNEL POWER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 46.8W (Tc)
• Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (5x6)
• Package / Case: 8-PowerTDFN

paquet: -

BZT52C13S-R9G

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 13 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 90 nA @ 8 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

paquet: -

TSD3GALH

Taiwan Semiconductor Corporation

3A, 600V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 18pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -40°C ~ 175°C

paquet: -

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TS20P03G

Taiwan Semiconductor Corporation

DIODE BRIDGE 200V 20A TS-6P

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200 V
• Current - Average Rectified (Io): 20 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

paquet: -

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1N5406GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

MBR30L100CT

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 100V 30A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 100 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

paquet: -

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BZT52C2V7S

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 2.7 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 18 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

paquet: -

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TSM210N02CX

Taiwan Semiconductor Corporation

20V, 6.7A, SINGLE N-CHANNEL POWE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 0.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Tc)
• Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: -

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BZD27C22PW

Taiwan Semiconductor Corporation

DIODE ZENER 22V 1W SOD123W

• Voltage - Zener (Nom) (Vz): 22 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 16 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W

paquet: -

1SMA5941H

Taiwan Semiconductor Corporation

DIODE ZENER 47V 1.5W DO214AC

• Voltage - Zener (Nom) (Vz): 47 V
• Tolerance: ±5%
• Power - Max: 1.5 W
• Impedance (Max) (Zzt): 67 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

paquet: -

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TS34063CS

Taiwan Semiconductor Corporation

IC REG BUCK BOOST ADJ 1.5A 8SOP

• Function: Step-Up, Step-Down
• Output Configuration: Positive
• Topology: Boost, Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 3V
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): 40V
• Current - Output: 1.5A (Switch)
• Frequency - Switching: Up to 100kHz
• Synchronous Rectifier: No
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

paquet: -

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TSSE3H45

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 3A SOD123HE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 45 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123H
• Supplier Device Package: SOD-123HE
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

HER3005PT

Taiwan Semiconductor Corporation

DIODE ARRAY GP 400V 30A TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (TO-3P)

paquet: -

TSZU52C9V1

Taiwan Semiconductor Corporation

603, 150MW, 5%, SMALL SIGNAL ZEN

• Voltage - Zener (Nom) (Vz): 9.1 V
• Tolerance: ±4.99%
• Power - Max: 150 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 7 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603

paquet: -

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BZT55C36

Taiwan Semiconductor Corporation

QMMELF, 500MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 36 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 27 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: QMMELF

paquet: -

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BZT55B27

Taiwan Semiconductor Corporation

MMELF, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 27 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 20 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: QMMELF

paquet: -

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1N4757AH

Taiwan Semiconductor Corporation

DIODE ZENER 51V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 51 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 38.8 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: -

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SR520H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 5A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

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