Page 21 - Produits STMicroelectronics - Diodes - Redresseurs - Simples

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
STPSC12H065DY	STMicroelectronics	DIODE SCHOTTKY 650V 12A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 120µA @ 650V Capacitance @ Vr, F: 600pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-220-2	Stock7 464	650V	12A	1.75V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 650V	600pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
SPV1001N30	STMicroelectronics	DIODE GEN PURP 30V 12.5A 8PQFN Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 12.5A Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (5x6) Operating Temperature - Junction: -45°C ~ 150°C	paquet: 8-PowerVDFN	Stock43 572	30V	12.5A	850mV @ 5A	-	-	1µA @ 30V	-	Surface Mount	8-PowerVDFN	8-PQFN (5x6)	-45°C ~ 150°C
STTH50W06SW	STMicroelectronics	DIODE GEN PURP 600V 50A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 2.4V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max)	paquet: TO-247-3	Stock6 816	600V	50A	2.4V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	50µA @ 600V	-	Through Hole	TO-247-3	TO-247	175°C (Max)
STPSC12C065DY	STMicroelectronics	DIODE SCHOTTKY 650V 12A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 120µA @ 650V Capacitance @ Vr, F: 530pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-220-2	Stock9 792	650V	12A	1.75V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 650V	530pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
STTH8T06DI	STMicroelectronics	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.95V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-220-2 Insulated, TO-220AC	Stock4 880	600V	8A	2.95V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 600V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	-40°C ~ 175°C
STPSC10H065DY	STMicroelectronics	DIODE SCHOTTKY 650V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 650V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-220-2	Stock7 116	650V	10A	1.75V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 650V	480pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
STTH30S06W	STMicroelectronics	DIODE GEN PURP 600V 30A DO247-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.6V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 175°C	paquet: DO-247-2 (Straight Leads)	Stock7 740	600V	30A	3.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	-	-40°C ~ 175°C
STPSC806G-TR	STMicroelectronics	DIODE SCHOTTKY 600V 8A D2PAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 450pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2 416	600V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	450pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
STPSC10H065DI	STMicroelectronics	DIODE SCHOTTKY 650V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-220-2 Insulated, TO-220AC	Stock15 492	650V	10A	1.75V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 650V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	-40°C ~ 175°C
STPSC806D	STMicroelectronics	DIODE SCHOTTKY 600V 8A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 450pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-220-2	Stock71 268	600V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	450pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
STTH3002W	STMicroelectronics	DIODE GEN PURP 200V 30A DO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 20µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Supplier Device Package: DO-247 Operating Temperature - Junction: 175°C (Max)	paquet: DO-247-2 (Straight Leads)	Stock4 832	200V	30A	1.05V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 200V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
STTH30R04WY	STMicroelectronics	DIODE GEN PURP 400V 30A DO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 15µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C	paquet: DO-247-2 (Straight Leads)	Stock15 624	400V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 400V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
STPSC6H12B-TR1	STMicroelectronics	DIODE SCHOTTKY 1.2KV 6A DPAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 400µA @ 1200V Capacitance @ Vr, F: 330pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7 152	1200V	6A	1.9V @ 6A	No Recovery Time > 500mA (Io)	0ns	400µA @ 1200V	330pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-40°C ~ 175°C
STTH30L06G-TR	STMicroelectronics	DIODE GEN PURP 600V 30A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max)	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock8 844	600V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	25µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
STPSC10H065D	STMicroelectronics	DIODE SCHOTTKY 650V 10A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 650V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-220-2	Stock5 616	650V	10A	1.75V @ 10A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	480pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
STTH30R04G-TR	STMicroelectronics	DIODE GEN PURP 400V 30A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 15µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7 648	400V	30A	1.45V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
STPSC8H065DI	STMicroelectronics	DIODE SCHOTTKY 650V 8A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-220-2 Insulated, TO-220AC	Stock15 936	650V	8A	1.75V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	80µA @ 650V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	-40°C ~ 175°C
STTH30R02DJF-TR	STMicroelectronics	DIODE GEN 200V 30A POWERFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6) Operating Temperature - Junction: 175°C (Max)	paquet: 8-PowerVDFN	Stock6 000	200V	30A	1.15V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)	175°C (Max)
STPSC8H065G-TR	STMicroelectronics	DIODE SCHOTTKY 650V 8A D2PAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 80µA @ 650V Capacitance @ Vr, F: 414pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2 736	650V	8A	1.75V @ 8A	No Recovery Time > 500mA (Io)	0ns	80µA @ 650V	414pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
STPSC606G-TR	STMicroelectronics	DIODE SCHOTTKY 600V 6A D2PAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 75µA @ 600V Capacitance @ Vr, F: 375pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5 040	600V	6A	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	75µA @ 600V	375pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
STPSC8H065D	STMicroelectronics	DIODE SCHOTTKY 650V 8A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 80µA @ 650V Capacitance @ Vr, F: 414pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-220-2	Stock5 312	650V	8A	1.75V @ 8A	No Recovery Time > 500mA (Io)	0ns	80µA @ 650V	414pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
STPSC8H065B-TR	STMicroelectronics	DIODE SCHOTTKY 650V 8A DPAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 80µA @ 650V Capacitance @ Vr, F: 414pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7 712	650V	8A	1.75V @ 8A	No Recovery Time > 500mA (Io)	0ns	80µA @ 650V	414pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	-40°C ~ 175°C
FERD30S50DJF-TR	STMicroelectronics	DIODE GEN PURP 50V 30A POWERFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 470mV @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6) Operating Temperature - Junction: 150°C (Max)	paquet: 8-PowerVDFN	Stock211 440	50V	30A	470mV @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	800µA @ 50V	-	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)	150°C (Max)
STPS3045DJF-TR	STMicroelectronics	DIODE SCHOTTKY 45V 30A POWERFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 640mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6) Operating Temperature - Junction: 150°C (Max)	paquet: 8-PowerVDFN	Stock16 080	45V	30A	640mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)	150°C (Max)
STPS30SM100SG-TR	STMicroelectronics	DIODE SCHOTTKY 100V 30A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 870mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 45µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max)	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18 972	100V	30A	870mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	45µA @ 100V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	150°C (Max)
STTH15L06G-TR	STMicroelectronics	DIODE GEN PURP 600V 20A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85ns Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max)	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19 632	600V	20A	1.55V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	15µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
STPSC6H065D	STMicroelectronics	DIODE SCHOTTKY 650V 6A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Capacitance @ Vr, F: 300pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-220-2	Stock19 944	650V	6A	1.75V @ 6A	No Recovery Time > 500mA (Io)	0ns	60µA @ 650V	300pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
STPSC6H065B-TR	STMicroelectronics	DIODE SCHOTTKY 650V 6A DPAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Capacitance @ Vr, F: 300pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: -40°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2 512	650V	6A	1.75V @ 6A	No Recovery Time > 500mA (Io)	0ns	60µA @ 650V	300pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	-40°C ~ 175°C

STPSC12H065DY

STMicroelectronics

DIODE SCHOTTKY 650V 12A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 120µA @ 650V
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-220-2

Stock7 464

650V

12A

1.75V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

120µA @ 650V

600pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC

-40°C ~ 175°C

SPV1001N30

STMicroelectronics

DIODE GEN PURP 30V 12.5A 8PQFN

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 12.5A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN (5x6)
Operating Temperature - Junction: -45°C ~ 150°C

paquet: 8-PowerVDFN

Stock43 572

30V

12.5A

850mV @ 5A

-

1µA @ 30V

-

Surface Mount

8-PowerVDFN

8-PQFN (5x6)

-45°C ~ 150°C

STTH50W06SW

STMicroelectronics

DIODE GEN PURP 600V 50A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 2.4V @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)

paquet: TO-247-3

Stock6 816

600V

50A

2.4V @ 50A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

50µA @ 600V

-

Through Hole

TO-247-3

TO-247

175°C (Max)

STPSC12C065DY

STMicroelectronics

DIODE SCHOTTKY 650V 12A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 120µA @ 650V
Capacitance @ Vr, F: 530pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-220-2

Stock9 792

650V

12A

1.75V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

120µA @ 650V

530pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC

-40°C ~ 175°C

STTH8T06DI

STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.95V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-220-2 Insulated, TO-220AC

Stock4 880

600V

8A

2.95V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 600V

-

Through Hole

TO-220-2 Insulated, TO-220AC

TO-220AC ins

-40°C ~ 175°C

STPSC10H065DY

STMicroelectronics

DIODE SCHOTTKY 650V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 650V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-220-2

Stock7 116

650V

10A

1.75V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 650V

480pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC

-40°C ~ 175°C

STTH30S06W

STMicroelectronics

DIODE GEN PURP 600V 30A DO247-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3.6V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 175°C

paquet: DO-247-2 (Straight Leads)

Stock7 740

600V

30A

3.6V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

50µA @ 600V

-

Through Hole

DO-247-2 (Straight Leads)

-

-40°C ~ 175°C

STPSC806G-TR

STMicroelectronics

DIODE SCHOTTKY 600V 8A D2PAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2 416

600V

8A

1.7V @ 8A

No Recovery Time > 500mA (Io)

0ns

100µA @ 600V

450pF @ 0V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-40°C ~ 175°C

STPSC10H065DI

STMicroelectronics

DIODE SCHOTTKY 650V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-220-2 Insulated, TO-220AC

Stock15 492

650V

10A

1.75V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 650V

-

Through Hole

TO-220-2 Insulated, TO-220AC

TO-220AC ins

-40°C ~ 175°C

STPSC806D

STMicroelectronics

DIODE SCHOTTKY 600V 8A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-220-2

Stock71 268

600V

8A

1.7V @ 8A

No Recovery Time > 500mA (Io)

0ns

100µA @ 600V

450pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC

-40°C ~ 175°C

STTH3002W

STMicroelectronics

DIODE GEN PURP 200V 30A DO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 20µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)

paquet: DO-247-2 (Straight Leads)

Stock4 832

200V

30A

1.05V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

20µA @ 200V

-

Through Hole

DO-247-2 (Straight Leads)

DO-247

175°C (Max)

STTH30R04WY

STMicroelectronics

DIODE GEN PURP 400V 30A DO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 15µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C

paquet: DO-247-2 (Straight Leads)

Stock15 624

400V

30A

1.55V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

15µA @ 400V

-

Through Hole

DO-247-2 (Straight Leads)

DO-247

-40°C ~ 175°C

STPSC6H12B-TR1

STMicroelectronics

DIODE SCHOTTKY 1.2KV 6A DPAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7 152

1200V

6A

1.9V @ 6A

No Recovery Time > 500mA (Io)

0ns

400µA @ 1200V

330pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-40°C ~ 175°C

STTH30L06G-TR

STMicroelectronics

DIODE GEN PURP 600V 30A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 25µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock8 844

600V

30A

1.55V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

90ns

25µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

175°C (Max)

STPSC10H065D

STMicroelectronics

DIODE SCHOTTKY 650V 10A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 650V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-220-2

Stock5 616

650V

10A

1.75V @ 10A

No Recovery Time > 500mA (Io)

0ns

100µA @ 650V

480pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC

-40°C ~ 175°C

STTH30R04G-TR

STMicroelectronics

DIODE GEN PURP 400V 30A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 15µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7 648

400V

30A

1.45V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

15µA @ 400V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-40°C ~ 175°C

STPSC8H065DI

STMicroelectronics

DIODE SCHOTTKY 650V 8A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-220-2 Insulated, TO-220AC

Stock15 936

650V

8A

1.75V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

80µA @ 650V

-

Through Hole

TO-220-2 Insulated, TO-220AC

TO-220AC ins

-40°C ~ 175°C

STTH30R02DJF-TR

STMicroelectronics

DIODE GEN 200V 30A POWERFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)
Operating Temperature - Junction: 175°C (Max)

paquet: 8-PowerVDFN

Stock6 000

200V

30A

1.15V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 200V

-

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

175°C (Max)

STPSC8H065G-TR

STMicroelectronics

DIODE SCHOTTKY 650V 8A D2PAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 80µA @ 650V
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2 736

650V

8A

1.75V @ 8A

No Recovery Time > 500mA (Io)

0ns

80µA @ 650V

414pF @ 0V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-40°C ~ 175°C

STPSC606G-TR

STMicroelectronics

DIODE SCHOTTKY 600V 6A D2PAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 75µA @ 600V
Capacitance @ Vr, F: 375pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5 040

600V

6A

1.7V @ 6A

No Recovery Time > 500mA (Io)

0ns

75µA @ 600V

375pF @ 0V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-40°C ~ 175°C

STPSC8H065D

STMicroelectronics

DIODE SCHOTTKY 650V 8A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 80µA @ 650V
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-220-2

Stock5 312

650V

8A

1.75V @ 8A

No Recovery Time > 500mA (Io)

0ns

80µA @ 650V

414pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC

-40°C ~ 175°C

STPSC8H065B-TR

STMicroelectronics

DIODE SCHOTTKY 650V 8A DPAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 80µA @ 650V
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7 712

650V

8A

1.75V @ 8A

No Recovery Time > 500mA (Io)

0ns

80µA @ 650V

414pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

-40°C ~ 175°C

FERD30S50DJF-TR

STMicroelectronics

DIODE GEN PURP 50V 30A POWERFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)
Operating Temperature - Junction: 150°C (Max)

paquet: 8-PowerVDFN

Stock211 440

50V

30A

470mV @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

800µA @ 50V

-

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

150°C (Max)

STPS3045DJF-TR

STMicroelectronics

DIODE SCHOTTKY 45V 30A POWERFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 640mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)
Operating Temperature - Junction: 150°C (Max)

paquet: 8-PowerVDFN

Stock16 080

45V

30A

640mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 45V

-

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

150°C (Max)

STPS30SM100SG-TR

STMicroelectronics

DIODE SCHOTTKY 100V 30A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 870mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 45µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18 972

100V

30A

870mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

45µA @ 100V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

150°C (Max)

STTH15L06G-TR

STMicroelectronics

DIODE GEN PURP 600V 20A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19 632

600V

20A

1.55V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

85ns

15µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

175°C (Max)

STPSC6H065D

STMicroelectronics

DIODE SCHOTTKY 650V 6A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-220-2

Stock19 944

650V

6A

1.75V @ 6A

No Recovery Time > 500mA (Io)

0ns

60µA @ 650V

300pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC

-40°C ~ 175°C

STPSC6H065B-TR

STMicroelectronics

DIODE SCHOTTKY 650V 6A DPAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: -40°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2 512

650V

6A

1.75V @ 6A

No Recovery Time > 500mA (Io)

0ns

60µA @ 650V

300pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

-40°C ~ 175°C