Produits Rohm Semiconductor

2SK3050TL

Rohm Semiconductor

MOSFET N-CH 600V 2A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 25.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: CPT3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

KDZVTR9.1B

Rohm Semiconductor

DIODE ZENER 9.1V 1W PMDU

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: -
• Power - Max: 1W
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 20µA @ 6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU

paquet: SOD-123F

RSX301LA-30TR

Rohm Semiconductor

DIODE SCHOTTKY 30V 3A PMDT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 420mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDT
• Operating Temperature - Junction: 150°C (Max)

paquet: SOD-128

RBR3LAM30ATR

Rohm Semiconductor

DIODE SCHOTTKY 30V 3A PMDTM

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM
• Operating Temperature - Junction: 150°C (Max)

paquet: SOD-128

BR24C32A-10TU-1.8

Rohm Semiconductor

IC EEPROM 32KBIT 400KHZ 8TSSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 32Kb (4K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

paquet: 8-TSSOP (0.173", 4.40mm Width)

BR24S32FJ-WE2

Rohm Semiconductor

IC EEPROM 32KBIT 400KHZ 8SOP-J

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 32Kb (4K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

paquet: 8-SOIC (0.154", 3.90mm Width)

SLI-560DT3F

Rohm Semiconductor

LED ORANGE CLEAR 5MM ROUND T/H

• Color: Orange
• Configuration: -
• Lens Color: Colorless
• Lens Transparency: Clear
• Millicandela Rating: 1000mcd
• Lens Style/Size: Round with Domed Top, 5mm (T-1 3/4), 5.00mm
• Voltage - Forward (Vf) (Typ): 1.9V
• Current - Test: 20mA
• Viewing Angle: 40°
• Mounting Type: Through Hole
• Wavelength - Dominant: 611nm
• Wavelength - Peak: -
• Features: -
• Package / Case: Radial
• Supplier Device Package: T-1 3/4
• Size / Dimension: -
• Height (Max): 7.70mm

paquet: Radial

MNR14E0ABJ910

Rohm Semiconductor

RES ARRAY 4 RES 91 OHM 1206

• Circuit Type: Isolated
• Resistance (Ohms): 91
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

paquet: 1206 (3216 Metric), Convex, Long Side Terminals

MCR25JZHF69R8

Rohm Semiconductor

RES SMD 69.8 OHM 1% 1/4W 1210

• Resistance: 69.8 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 1210 (3225 Metric)

MCR18EZPF1782

Rohm Semiconductor

RES SMD 17.8K OHM 1% 1/4W 1206

• Resistance: 17.8 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 1206 (3216 Metric)

MCR10EZPF15R0

Rohm Semiconductor

RES SMD 15 OHM 1% 1/8W 0805

• Resistance: 15 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0805 (2012 Metric)

MCR006YZPF73R2

Rohm Semiconductor

RES SMD 73.2 OHM 1% 1/20W 0201

• Resistance: 73.2 Ohms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0201 (0603 Metric)

LTR50UZPJ181

Rohm Semiconductor

RES SMD 180 OHM 1W 2010 WIDE

• Resistance: 180 Ohms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 2010 (5025 Metric), 1020
• Supplier Device Package: 2010
• Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: Wide 2010 (5025 Metric), 1020

KTR03EZPJ8R2

Rohm Semiconductor

RES SMD 8.2 OHM 5% 1/10W 0603

• Resistance: 8.2 Ohms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0603 (1608 Metric)

MCR50JZHJ363

Rohm Semiconductor

RES SMD 36K OHM 5% 1/2W 2010

• Resistance: 36 kOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 2010 (5025 Metric)

MCR03ERTF2740

Rohm Semiconductor

RES SMD 274 OHM 1% 1/10W 0603

• Resistance: 274 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0603 (1608 Metric)

MCR03ERTJ912

Rohm Semiconductor

RES SMD 9.1K OHM 5% 1/10W 0603

• Resistance: 9.1 kOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0603 (1608 Metric)

KTR10EZPF4704

Rohm Semiconductor

RES SMD 4.7M OHM 1% 1/8W 0805

• Resistance: 4.7 MOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0805 (2012 Metric)

MCR100JZHF8060

Rohm Semiconductor

RES SMD 806 OHM 1% 1W 2512

• Resistance: 806 Ohms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 2512 (6432 Metric)

MCR100JZHF86R6

Rohm Semiconductor

RES SMD 86.6 OHM 1% 1W 2512

• Resistance: 86.6 Ohms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 2512 (6432 Metric)

MCR03EZPJ241

Rohm Semiconductor

RES SMD 240 OHM 5% 1/10W 0603

• Resistance: 240 Ohms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0603 (1608 Metric)

BDJ0GA3WNUX-TR

Rohm Semiconductor

300MA FIXED OUTPUT LDO REGULATOR

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 14V
• Voltage - Output (Min/Fixed): 10V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.9V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 900µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Soft Start
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN Exposed Pad
• Supplier Device Package: VSON008X2030

paquet: 8-UFDFN Exposed Pad

1SS380VMTE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 nA @ 80 V
• Capacitance @ Vr, F: 5pF @ 500mV, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: UMD2
• Operating Temperature - Junction: 150°C (Max)

paquet: -

SP8M5FRATB

Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
• Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

paquet: -

RFN5TF6SFHC9

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO220NFM

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220NFM
• Operating Temperature - Junction: 150°C (Max)

paquet: -

RB521S-30FJTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

paquet: -

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EMZ6-8EFHT2R

Rohm Semiconductor

ROHM'S ZENER DIODES ARE AVAILABL

• Configuration: 2 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 6.8 V
• Tolerance: ±4.93%
• Power - Max: 150 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: EMD5

paquet: -

RD3L08BGNTL

Rohm Semiconductor

MOSFET N-CH 60V 80A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 119W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

paquet: -