Produits Rohm Semiconductor

SP8M7FU6TB

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/7A 8SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5A, 7A
• Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

paquet: 8-SOIC (0.154", 3.90mm Width)

DTA014YEBTL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 70mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-89, SOT-490
• Supplier Device Package: EMT3F (SOT-416FL)

paquet: SC-89, SOT-490

EMF21T2R

Rohm Semiconductor

TRANS NPN PREBIAS/PNP 0.15W EMT6

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (Ic) (Max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V, 12V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 270 @ 10mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz, 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: EMT6

paquet: SOT-563, SOT-666

MTZJT-728.2B

Rohm Semiconductor

DIODE ZENER 8.2V 500MW DO34

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: MSD

paquet: DO-204AG, DO-34, Axial

RFN5BM6STL

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO252

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252
• Operating Temperature - Junction: 150°C (Max)

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

BU34TD2WNVX-TL

Rohm Semiconductor

IC REG LINEAR 3.4V 200MA 4SSON

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 3.4V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.42V @ 200mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: SSON004X1010

paquet: 4-UDFN Exposed Pad

BU4242F-TR

Rohm Semiconductor

IC DETECTOR VOLT 4.2V ODRN 4SOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: 4.2V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-82
• Supplier Device Package: 4-SOP

paquet: SC-82

BR24G128FVT-3AGE2

Rohm Semiconductor

IC EEPROM 128KBIT 1MHZ 8TSSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 128Kb (16K x 8)
• Memory Interface: I2C
• Clock Frequency: 1MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP-B

paquet: 8-TSSOP (0.173", 4.40mm Width)

BU2508FV-E2

Rohm Semiconductor

IC DAC 10BIT 4-CHAN SSOP14

• Number of Bits: 10
• Number of D/A Converters: 4
• Settling Time: 20µs
• Output Type: Voltage - Buffered
• Differential Output: No
• Data Interface: SPI
• Reference Type: Supply
• Voltage - Supply, Analog: 5V
• Voltage - Supply, Digital: 5V
• INL/DNL (LSB): ±3.5 (Max), ±1 (Max)
• Architecture: R-2R
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 14-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-SSOP
• Mounting Type: -

paquet: 14-LSSOP (0.173", 4.40mm Width)

MNR18ERAPJ150

Rohm Semiconductor

RES ARRAY 8 RES 15 OHM 1606

• Circuit Type: Isolated
• Resistance (Ohms): 15
• Tolerance: ±5%
• Number of Resistors: 8
• Number of Pins: 16
• Power Per Element: 62.5mW
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 1606, Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
• Height - Seated (Max): 0.020" (0.50mm)

paquet: 1606, Convex, Long Side Terminals

MCR006YRTJ434

Rohm Semiconductor

RES SMD 430K OHM 5% 1/20W 0201

• Resistance: 430 kOhms
• Tolerance: ±5%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0201 (0603 Metric)

MCR004YZPF3902

Rohm Semiconductor

RES SMD 39K OHM 1% 1/32W 01005

• Resistance: 39 kOhms
• Tolerance: ±1%
• Power (Watts): 0.03W, 1/32W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 01005 (0402 Metric)
• Supplier Device Package: 01005
• Size / Dimension: 0.016" L x 0.008" W (0.40mm x 0.20mm)
• Height - Seated (Max): 0.006" (0.15mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 01005 (0402 Metric)

MCR18EZHF22R0

Rohm Semiconductor

RES SMD 22 OHM 1% 1/4W 1206

• Resistance: 22 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 1206 (3216 Metric)

MCR03EZPFX18R2

Rohm Semiconductor

RES SMD 18.2 OHM 1% 1/10W 0603

• Resistance: 18.2 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0603 (1608 Metric)

ESR10EZPF1962

Rohm Semiconductor

RES SMD 19.6K OHM 1% 0.4W 0805

• Resistance: 19.6 kOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0805 (2012 Metric)

ESR18EZPF6492

Rohm Semiconductor

RES SMD 64.9K OHM 1% 1/3W 1206

• Resistance: 64.9 kOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 1206 (3216 Metric)

TRR01MZPJ680

Rohm Semiconductor

RES SMD 68 OHM 5% 1/16W 0402

• Resistance: 68 Ohms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0402 (1005 Metric)

ESR03EZPJ1R5

Rohm Semiconductor

RES SMD 1.5 OHM 5% 1/4W 0603

• Resistance: 1.5 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0603 (1608 Metric)

MCR10ERTF1744

Rohm Semiconductor

RES SMD 1.74M OHM 1% 1/8W 0805

• Resistance: 1.74 MOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0805 (2012 Metric)

KTR03EZPJ475

Rohm Semiconductor

RES SMD 4.7M OHM 5% 1/10W 0603

• Resistance: 4.7 MOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 0603 (1608 Metric)

KTR18EZPF9092

Rohm Semiconductor

RES SMD 90.9K OHM 1% 1/4W 1206

• Resistance: 90.9 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 1206 (3216 Metric)

KTR25JZPF9104

Rohm Semiconductor

RES SMD 9.1M OHM 1% 1/3W 1210

• Resistance: 9.1 MOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 1210 (3225 Metric)

PMR18EZPFU10L0

Rohm Semiconductor

RES SMD 0.01 OHM 1% 1W 1206

• Resistance: 10 mOhms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.017" (0.43mm)
• Number of Terminations: 2
• Failure Rate: -

paquet: 1206 (3216 Metric)

BP5729

Rohm Semiconductor

AC/DC CONVERTER 12V 2A 24W

• Type: Enclosed
• Number of Outputs: 1
• Voltage - Input: 85 ~ 264 VAC
• Voltage - Output 1: 12V
• Voltage - Output 2: -
• Voltage - Output 3: -
• Voltage - Output 4: -
• Current - Output (Max): 2A
• Power (Watts): 24W
• Applications: ITE (Commercial)
• Features: -
• Operating Temperature: -25°C ~ 80°C (With Derating)
• Efficiency: 90%
• Mounting Type: Through Hole
• Package / Case: 12-SIP Module, 8 Leads
• Size / Dimension: 1.47" L x 0.37" W x 0.96" H (37.4mm x 9.3mm x 24.3mm)

paquet: 12-SIP Module, 8 Leads

RBE05SM20AT2RB

Rohm Semiconductor

DIODE SCHOTTKY 20V 500MA EMD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: EMD2
• Operating Temperature - Junction: 125°C

paquet: -

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SCS206AGC17

Rohm Semiconductor

DIODE SIL CARB 650V 6A TO220ACFP

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 120 µA @ 600 V
• Capacitance @ Vr, F: 219pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220ACFP
• Operating Temperature - Junction: 175°C

paquet: -

UDZVFHTE-1736B

Rohm Semiconductor

DIODE ZENER 36V 200MW UMD2

• Voltage - Zener (Nom) (Vz): 36 V
• Tolerance: ±2.5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 27 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: UMD2

paquet: -

R6006JND3TL1

Rohm Semiconductor

MOSFET N-CH 600V 6A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 7V @ 800µA
• Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

paquet: -