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Produits Nexperia USA Inc.

Dossiers 11 821
Page  228/423
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PSMN2R0-25MLDX
Nexperia USA Inc.

PSMN2R0-25MLD/MLFPAK/REEL 7 Q

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.27 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
paquet: SOT-1210, 8-LFPAK33 (5-Lead)
Stock7 808
BUK7E13-60E,127
Nexperia USA Inc.

MOSFET N-CH 60V 58A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock6 840
BUK6607-55C,118
Nexperia USA Inc.

MOSFET N-CH 55V 100A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 158W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock27 804
PMDXB1200UPEZ
Nexperia USA Inc.

MOSFET 2P-CH 30V 0.41A 6DFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 410mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 410mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V
  • Power - Max: 285mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
paquet: 6-XFDFN Exposed Pad
Stock96 450
hot PUMD20,115
Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
paquet: 6-TSSOP, SC-88, SOT-363
Stock36 000
BZX585-B62,115
Nexperia USA Inc.

DIODE ZENER 62V 300MW SOD523

  • Voltage - Zener (Nom) (Vz): 62V
  • Tolerance: ±2%
  • Power - Max: 300mW
  • Impedance (Max) (Zzt): 215 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 43.4V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
paquet: SC-79, SOD-523
Stock6 928
NZX4V3C,133
Nexperia USA Inc.

DIODE ZENER 4.3V 500MW ALF2

  • Voltage - Zener (Nom) (Vz): 4.3V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 3µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: ALF2
paquet: DO-204AH, DO-35, Axial
Stock5 312
PZU3.3B2,115
Nexperia USA Inc.

DIODE ZENER 3.3V 310MW SOD323F

  • Voltage - Zener (Nom) (Vz): 3.3V
  • Tolerance: ±2%
  • Power - Max: 310mW
  • Impedance (Max) (Zzt): 95 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
paquet: SC-90, SOD-323F
Stock26 250
hot TDZ3V6J,115
Nexperia USA Inc.

DIODE ZENER 3.6V 500MW SOD323F

  • Voltage - Zener (Nom) (Vz): 3.6V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
paquet: SC-90, SOD-323F
Stock36 000
PMEG2020CPASX
Nexperia USA Inc.

DIODE SCHOTTKY 20V 2A SOT1061

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io) (per Diode): 2A
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 1000µA @ 20V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: DFN2020D-3
paquet: 3-SMD, No Lead
Stock3 888
74AHC573BQ,115
Nexperia USA Inc.

IC TRANSP LATCH OCT D 20DHVQFN

  • Logic Type: D-Type Transparent Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 2 V ~ 5.5 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 3.9ns
  • Current - Output High, Low: 8mA, 8mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-VFQFN Exposed Pad
  • Supplier Device Package: 20-DHVQFN (4.5x 2.5)
paquet: 20-VFQFN Exposed Pad
Stock4 304
74AHC86BQ-Q100X
Nexperia USA Inc.

IC GATE XOR 4CH 2-INP 14-DHVQFN

  • Logic Type: XOR (Exclusive OR)
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5 V ~ 1.65 V
  • Logic Level - High: 1.5 V ~ 3.85 V
  • Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-DHVQFN (2.5x3)
  • Package / Case: 14-VFQFN Exposed Pad
paquet: 14-VFQFN Exposed Pad
Stock6 864
74AUP1G06GW-Q100H
Nexperia USA Inc.

IC INVERTER LP O-D OUT 5TSSOP

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: Open Drain
  • Voltage - Supply: 0.8 V ~ 3.6 V
  • Current - Quiescent (Max): 0.5µA
  • Current - Output High, Low: -, 4mA
  • Logic Level - Low: 0.7 V ~ 0.9 V
  • Logic Level - High: 1.6 V ~ 2 V
  • Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-TSSOP
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
paquet: 5-TSSOP, SC-70-5, SOT-353
Stock6 656
74LVC1G332GM,115
Nexperia USA Inc.

IC GATE OR 1CH 3-INP 6-XSON

  • Logic Type: OR Gate
  • Number of Circuits: 1
  • Number of Inputs: 3
  • Features: -
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 4µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: 0.7 V ~ 0.8 V
  • Logic Level - High: 1.7 V ~ 2 V
  • Max Propagation Delay @ V, Max CL: 3.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-XSON, SOT886 (1.45x1)
  • Package / Case: 6-XFDFN
paquet: 6-XFDFN
Stock4 032
74LVC16244ADGG,118
Nexperia USA Inc.

IC BUFF DVR TRI-ST 16BIT 48TSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 4
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.240", 6.10mm Width)
  • Supplier Device Package: 48-TSSOP
paquet: 48-TFSOP (0.240", 6.10mm Width)
Stock16 920
PESD12VS1ULD,315
Nexperia USA Inc.

TVS DIODE 12VWM 35VC SOD882D

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 12V (Max)
  • Voltage - Breakdown (Min): 14.7V
  • Voltage - Clamping (Max) @ Ipp: 35V
  • Current - Peak Pulse (10/1000µs): 5A (8/20µs)
  • Power - Peak Pulse: 150W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: 38pF @ 1MHz
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 2-XDFN
  • Supplier Device Package: 2-DFN1006D (0.6x1.0)
paquet: 2-XDFN
Stock7 812
74LV1T125GXH
Nexperia USA Inc.

IC BUF NON-INVERT 5.5V 5X2SON

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 5-XFDFN Exposed Pad
  • Supplier Device Package: 5-X2SON (0.80x0.80)
paquet: 5-XFDFN Exposed Pad
Stock78 588
BZX8450-C3V9-QR
Nexperia USA Inc.

BZX8450-C3V9-Q/SOT23/TO-236AB

  • Voltage - Zener (Nom) (Vz): 3.9 V
  • Tolerance: ±5%
  • Power - Max: 250 mW
  • Impedance (Max) (Zzt): 95 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 2 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
paquet: -
Stock8 970
BZX84W-C51-QX
Nexperia USA Inc.

BZX84W-C51-Q/SOT323/SC-70

  • Voltage - Zener (Nom) (Vz): 51 V
  • Tolerance: ±5.88%
  • Power - Max: 275 mW
  • Impedance (Max) (Zzt): 180 Ohms
  • Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
paquet: -
Request a Quote
PBSS4350T-QR
Nexperia USA Inc.

PBSS4350T-Q/SOT23/TO-236AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 1.2 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
paquet: -
Request a Quote
PUMD13-ZLX
Nexperia USA Inc.

TRANS PREBIAS

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz, 180MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
paquet: -
Request a Quote
BZT52-B10-QX
Nexperia USA Inc.

BZT52-B10-Q/SOD123/SOD2

  • Voltage - Zener (Nom) (Vz): 10 V
  • Tolerance: ±2%
  • Power - Max: 590 mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 200 nA @ 7 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
paquet: -
Request a Quote
BAS321-QF
Nexperia USA Inc.

DIODE GEN PURP 200V 250MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 200 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 150°C
paquet: -
Request a Quote
BZT52-B11J
Nexperia USA Inc.

DIODE ZENER 11V 590MW SOD123

  • Voltage - Zener (Nom) (Vz): 11 V
  • Tolerance: ±1.82%
  • Power - Max: 590 mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 8 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
paquet: -
Stock30 777
PMPB10ENZ
Nexperia USA Inc.

MOSFET N-CH 30V 10A DFN2020MD-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
paquet: -
Request a Quote
PMPB10UPX
Nexperia USA Inc.

MOSFET P-CH 12V 10A DFN2020MD-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 13mW (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
paquet: -
Request a Quote
74LVCH16244ADGG-112
Nexperia USA Inc.

74LVCH162 - 16-bit buffer/line d

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 4
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.240", 6.10mm Width)
  • Supplier Device Package: 48-TSSOP
paquet: -
Request a Quote
PDTA123JQC-QZ
Nexperia USA Inc.

TRANS PREBIAS PNP 50V 0.1A 3DFN

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 180 MHz
  • Power - Max: 360 mW
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1412D-3
paquet: -
Stock15 000