Produits Microsemi Corporation

APTGT50DH60T1G

Microsemi Corporation

MOD IGBT 600V 80A SP1

• IGBT Type: Trench Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Power - Max: 176W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Supplier Device Package: SP1

paquet: SP1

SMBG4752E3/TR13

Microsemi Corporation

DIODE ZENER 33V 2W SMBG

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 25.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

paquet: DO-215AA, SMB Gull Wing

JANTX1N5533DUR-1

Microsemi Corporation

DIODE ZENER 13V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 11.7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

paquet: DO-213AA (Glass)

JANTXV1N5545BUR-1

Microsemi Corporation

DIODE ZENER 30V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

paquet: DO-213AA (Glass)

JANTX1N5530C-1

Microsemi Corporation

DIODE ZENER 10V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

paquet: DO-204AH, DO-35, Axial

JAN1N4112UR-1

Microsemi Corporation

DIODE ZENER 18V DO213AA

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: -
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 13.7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

paquet: DO-213AA

1N5733D

Microsemi Corporation

DIODE ZENER 7.5V 500MW DO35

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

paquet: DO-204AH, DO-35, Axial

1N5378A/TR12

Microsemi Corporation

DIODE ZENER 100V 5W T18

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±10%
• Power - Max: 5W
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 72V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

paquet: T-18, Axial

1N5930CP/TR12

Microsemi Corporation

DIODE ZENER 16V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 12.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

SMBG5347AE3/TR13

Microsemi Corporation

DIODE ZENER 10V 5W SMBG

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±10%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 7.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

paquet: DO-215AA, SMB Gull Wing

JANTX1N4115-1

Microsemi Corporation

DIODE ZENER 22V 500MW DO35

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 16.8V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

paquet: DO-204AH, DO-35, Axial

APT15DQ100KG

Microsemi Corporation

DIODE GEN PURP 1KV 15A TO220

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 3V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 235ns
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220 [K]
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-220-3

CPT30050

Microsemi Corporation

DIODE MODULE 50V 150A 2TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io) (per Diode): 150A
• Voltage - Forward (Vf) (Max) @ If: 760mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4mA @ 50V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: MD3CC
• Supplier Device Package: Twin Tower

paquet: MD3CC

A1415A-VQ100M

Microsemi Corporation

IC FPGA 80 I/O 100VQFP

• Number of LABs/CLBs: 200
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 80
• Number of Gates: 1500
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

paquet: 100-TQFP

A3P600-FG484

Microsemi Corporation

IC FPGA 235 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 110592
• Number of I/O: 235
• Number of Gates: 600000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

paquet: 484-BGA

A54SX72A-1FGG256I

Microsemi Corporation

IC FPGA 203 I/O 256FBGA

• Number of LABs/CLBs: 6036
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 203
• Number of Gates: 108000
• Voltage - Supply: 2.25 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

paquet: 256-LBGA

A42MX16-PQ208

Microsemi Corporation

IC FPGA 140 I/O 208QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 140
• Number of Gates: 24000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

paquet: 208-BFQFP

M2GL025TS-1VF256I

Microsemi Corporation

IC FPGA 138 I/O 256VFBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 27696
• Total RAM Bits: 1130496
• Number of I/O: 138
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 256-LFBGA
• Supplier Device Package: 256-BGA (17x17)

paquet: 256-LFBGA

A3P250-1VQG100T

Microsemi Corporation

IC FPGA 68 I/O 100VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 36864
• Number of I/O: 68
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

paquet: 100-TQFP

DS3100GN+

Microsemi Corporation

IC TIMING CARD STRATUM 256CSBGA

• PLL: Yes
• Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom
• Input: CMOS, LVDS, LVPECL, TTL
• Output: CMOS, LVDS, TTL
• Number of Circuits: 1
• Ratio - Input:Output: 14:11
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 311.04MHz
• Voltage - Supply: 1.62 V ~ 1.98 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 256-LBGA, CSBGA
• Supplier Device Package: 256-CSBGA (17x17)

paquet: 256-LBGA, CSBGA

JANTX1N6041A

Microsemi Corporation

TVS DIODE 10VWM 16.7VC DO13

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.7V
• Current - Peak Pulse (10/1000µs): 90A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13 (DO-202AA)

paquet: DO-13

MA1.5KE250CA

Microsemi Corporation

TVS DIODE 214VWM 344VC DO204AR

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 214V
• Voltage - Breakdown (Min): 237V
• Voltage - Clamping (Max) @ Ipp: 344V
• Current - Peak Pulse (10/1000µs): 5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

paquet: DO-204AR, Axial

MPLAD36KP120CAE3

Microsemi Corporation

TVS DIODE 193VC 187A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 193V
• Current - Peak Pulse (10/1000µs): 187A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

paquet: Nonstandard SMD

MPLAD18KP30AE3

Microsemi Corporation

TVS DIODE 48.4VC 372A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30V
• Voltage - Breakdown (Min): 33.3V
• Voltage - Clamping (Max) @ Ipp: 48.4V
• Current - Peak Pulse (10/1000µs): 372A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

paquet: Nonstandard SMD

MXLCE64A

Microsemi Corporation

TVS DIODE 64VWM 103VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 14.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 90pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

paquet: DO-201AA, DO-27, Axial

1N6060

Microsemi Corporation

TVS DIODE 60VWM 108VC DO13

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 60V
• Voltage - Breakdown (Min): 67.5V
• Voltage - Clamping (Max) @ Ipp: 108V
• Current - Peak Pulse (10/1000µs): 13.9A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13

paquet: DO-13

30KPA33CE3/TR13

Microsemi Corporation

TVS DIODE 33VWM P600

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 34.79V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

paquet: P600, Axial

MXL1.5KE22A

Microsemi Corporation

TVS DIODE 18.8VWM 30.6VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18.8V
• Voltage - Breakdown (Min): 20.9V
• Voltage - Clamping (Max) @ Ipp: 30.6V
• Current - Peak Pulse (10/1000µs): 49A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

paquet: DO-201AA, DO-27, Axial