Produits Microsemi Corporation

JAN1N6317US

Microsemi Corporation

DIODE ZENER 3.3V 500MW DO35

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

paquet: DO-204AH, DO-35, Axial

3EZ110D10/TR12

Microsemi Corporation

DIODE ZENER 110V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 225 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 83.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

JANTX1N3023BUR-1

Microsemi Corporation

DIODE ZENER 13V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 9.9V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)

paquet: DO-213AB, MELF (Glass)

JANTXV1N4957US

Microsemi Corporation

DIODE ZENER 9.1V 5W D5B

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 6.9V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: E-MELF
• Supplier Device Package: D-5B

paquet: E-MELF

JAN1N4489C

Microsemi Corporation

DIODE ZENER 100V 1.5W DO41

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 250nA @ 80V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

paquet: DO-204AL, DO-41, Axial

1N723

Microsemi Corporation

DIODE ZENER 24V 250MW DO35

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±10%
• Power - Max: 250mW
• Impedance (Max) (Zzt): 28 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

paquet: DO-204AH, DO-35, Axial

CDLL0.5A20

Microsemi Corporation

DIODE SCHOTTKY 20V 500MA DO213AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 20V
• Capacitance @ Vr, F: 50pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA
• Operating Temperature - Junction: -65°C ~ 125°C

paquet: DO-213AA

JAN1N1206AR

Microsemi Corporation

DIODE GEN PURP 600V 12A DO203AA

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA (DO-4)
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-203AA, DO-4, Stud

JANTX1N5554

Microsemi Corporation

DIODE GEN PURP 1KV 5A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 2µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

paquet: B, Axial

MBR3040CTE3/TU

Microsemi Corporation

DIODE ARRAY SCHOTTKY 40V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 40V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

paquet: TO-220-3

ZL50235/GDC

Microsemi Corporation

IC VOICE ECHO CANCELLER 208LBGA

• Function: Echo Cancellation
• Interface: LIU
• Number of Circuits: 1
• Voltage - Supply: 1.6 V ~ 2 V
• Current - Supply: 40mA
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 208-LBGA
• Supplier Device Package: 208-LBGA (17x17)

paquet: 208-LBGA

ZL50017GAC

Microsemi Corporation

IC TDM SWITCH 1024X1024 256BGA

• Function: Switch
• Interface: -
• Number of Circuits: 1
• Voltage - Supply: 1.71 V ~ 1.89 V
• Current - Supply: 75mA
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 256-BGA
• Supplier Device Package: 256-BGA (17x17)

paquet: 256-BGA

M2S090TS-1FGG484

Microsemi Corporation

IC FPGA SOC 90K LUTS 484FBGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 90K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

paquet: 484-BGA

A54SX32A-FGG144I

Microsemi Corporation

IC FPGA 111 I/O 144FBGA

• Number of LABs/CLBs: 2880
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 111
• Number of Gates: 48000
• Voltage - Supply: 2.25 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

paquet: 144-LBGA

A1240A-1PQ144C

Microsemi Corporation

IC FPGA 104 I/O 144QFP

• Number of LABs/CLBs: 684
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 104
• Number of Gates: 4000
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 144-BQFP
• Supplier Device Package: 144-PQFP (28x28)

paquet: 144-BQFP

A40MX04-1VQ80M

Microsemi Corporation

IC FPGA 69 I/O 80VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 69
• Number of Gates: 6000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 80-TQFP
• Supplier Device Package: 80-VQFP (14x14)

paquet: 80-TQFP

MA1.5KE16CA

Microsemi Corporation

TVS DIODE 13.6VWM DO204AR

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 13.6V
• Voltage - Breakdown (Min): 15.2V
• Voltage - Clamping (Max) @ Ipp: 22.5V
• Current - Peak Pulse (10/1000µs): 67A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

paquet: DO-204AR, Axial

MXPLAD30KP160AE3

Microsemi Corporation

TVS DIODE 160VWM 259VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 160V
• Voltage - Breakdown (Min): 178V
• Voltage - Clamping (Max) @ Ipp: 259V
• Current - Peak Pulse (10/1000µs): 116A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

paquet: Nonstandard SMD

MX15KP85CAE3

Microsemi Corporation

TVS DIODE 85VWM 137VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 109A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

paquet: DO-204AR, Axial

MXSMBJ120A

Microsemi Corporation

TVS DIODE 120VWM 193VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 193V
• Current - Peak Pulse (10/1000µs): 3.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

paquet: DO-214AA, SMB

MXSMCJ26CA

Microsemi Corporation

TVS DIODE 26VWM 42.1VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 26V
• Voltage - Breakdown (Min): 28.9V
• Voltage - Clamping (Max) @ Ipp: 42.1V
• Current - Peak Pulse (10/1000µs): 35.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

paquet: DO-214AB, SMC

MXLP5KE54AE3

Microsemi Corporation

TVS DIODE 54VWM 87.1VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 87.1V
• Current - Peak Pulse (10/1000µs): 5.7A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

15KPA28E3/TR13

Microsemi Corporation

TVS DIODE 28VWM R6

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28V
• Voltage - Breakdown (Min): 29.48V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

paquet: P600, Axial

5KP85E3/TR13

Microsemi Corporation

TVS DIODE 85VWM 151VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 151V
• Current - Peak Pulse (10/1000µs): 33.1A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

paquet: P600, Axial

5KP110E3/TR13

Microsemi Corporation

TVS DIODE 110VWM 196VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 196V
• Current - Peak Pulse (10/1000µs): 25.5A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

paquet: P600, Axial

SMCJ440E3/TR13

Microsemi Corporation

TVS DIODE 440VWM DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 440V
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

paquet: DO-214AB, SMC

SMBJ33CAE3/TR13

Microsemi Corporation

TVS DIODE 33VWM 53.3VC SMBJ

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 11.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

paquet: DO-214AA, SMB

JANSR2N7269

Microsemi Corporation

MOSFET N-CH 200V 26A TO254AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 12V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-254AA
• Package / Case: TO-254-3, TO-254AA

paquet: -

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