Produits Microsemi Corporation

APT94N65B2C3G

Microsemi Corporation

MOSFET N-CH 650V 94A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 5.8mA
• Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13940pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 833W (Tc)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 47A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: T-MAX? [B2]
• Package / Case: TO-247-3 Variant

paquet: TO-247-3 Variant

APTMC60TLM14CAG

Microsemi Corporation

MOSFET 4N-CH 1200V 219A SP6C

• FET Type: 4 N-Channel (Three Level Inverter)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 219A
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
• Power - Max: 925W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Supplier Device Package: SP6

paquet: SP6

JAN2N3810L

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

paquet: TO-78-6 Metal Can

JANTX1N6317US

Microsemi Corporation

DIODE ZENER 3.3V 500MW DO35

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

paquet: DO-204AH, DO-35, Axial

JANTX1N4129DUR-1

Microsemi Corporation

DIODE ZENER 62V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 500 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 47.1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

paquet: DO-213AA (Glass)

JANTXV1N5522D-1

Microsemi Corporation

DIODE ZENER 4.7V 500MW DO35

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

paquet: DO-204AH, DO-35, Axial

JAN1N4981C

Microsemi Corporation

DIODE ZENER 91V 5W AXIAL

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 69.2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: E, Axial

paquet: E, Axial

CDLL5934D

Microsemi Corporation

DIODE ZENER 24V 1.25W DO213AB

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±1%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 19 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

paquet: DO-213AB, MELF

SMBJ5929C/TR13

Microsemi Corporation

DIODE ZENER 15V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 11.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

paquet: DO-214AA, SMB

2EZ6.2D10/TR8

Microsemi Corporation

DIODE ZENER 6.2V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 1.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

1N5934AP/TR8

Microsemi Corporation

DIODE ZENER 24V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±10%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 19 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

SMBJ5371CE3/TR13

Microsemi Corporation

DIODE ZENER 60V 5W SMBJ

• Voltage - Zener (Nom) (Vz): 60V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 43V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

paquet: DO-214AA, SMB

1PMT5937CE3/TR13

Microsemi Corporation

DIODE ZENER 33V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 33 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 25.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

paquet: DO-216AA

UFS350JE3/TR13

Microsemi Corporation

DIODE GEN PURP 500V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 500V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-214AB, SMC

JANTX1N5712UR-1

Microsemi Corporation

DIODE SCHOTTKY 20V 75MA DO213AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 75mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150nA @ 16V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA
• Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-213AA

A2F500M3G-1FGG484M

Microsemi Corporation

IC FPGA 500K GATES 512KB 484FBGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DMA, POR, WDT
• Connectivity: EBI/EMI, Ethernet, I2C, SPI, UART/USART
• Speed: 100MHz
• Primary Attributes: ProASIC?3 FPGA, 500K Gates, 11520 D-Flip-Flops
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

paquet: 484-BGA

A3PN020-QNG68I

Microsemi Corporation

IC FPGA 49 I/O 68QFN

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 49
• Number of Gates: 20000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 68-VFQFN Exposed Pad
• Supplier Device Package: 68-QFN (8x8)

paquet: 68-VFQFN Exposed Pad

A42MX09-FPQG100

Microsemi Corporation

IC FPGA 83 I/O 100QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 83
• Number of Gates: 14000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 100-BQFP
• Supplier Device Package: 100-PQFP (14x20)

paquet: 100-BQFP

MAP6KE15AE3

Microsemi Corporation

TVS DIODE 12.8VWM 21.2VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12.8V
• Voltage - Breakdown (Min): 14.3V
• Voltage - Clamping (Max) @ Ipp: 21.2V
• Current - Peak Pulse (10/1000µs): 28A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

paquet: T-18, Axial

MAP5KE16AE3

Microsemi Corporation

TVS DIODE 16VWM 26VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 16V
• Voltage - Breakdown (Min): 17.8V
• Voltage - Clamping (Max) @ Ipp: 26V
• Current - Peak Pulse (10/1000µs): 19.2A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

M15KP160CA

Microsemi Corporation

TVS DIODE 160VWM 259VC DO204AR

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 160V
• Voltage - Breakdown (Min): 178V
• Voltage - Clamping (Max) @ Ipp: 259V
• Current - Peak Pulse (10/1000µs): 58A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

paquet: DO-204AR, Axial

MXPLAD18KP36A

Microsemi Corporation

TVS DIODE 58.1VC 310A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 310A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

paquet: Nonstandard SMD

MAPLAD15KP160CA

Microsemi Corporation

TVS DIODE 160VWM 259VC SMD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 160V
• Voltage - Breakdown (Min): 178V
• Voltage - Clamping (Max) @ Ipp: 259V
• Current - Peak Pulse (10/1000µs): 58A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

paquet: Nonstandard SMD

MPLAD18KP7.0A

Microsemi Corporation

TVS DIODE 12VC 1.5KA PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 1500A (1.5kA)
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

paquet: Nonstandard SMD

SM16LC24E3/TR13

Microsemi Corporation

TVS DIODE 24VWM 55VC 16SOIC

• Type: Zener
• Unidirectional Channels: 8
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 55V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 25pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

paquet: 16-SOIC (0.154", 3.90mm Width)

SMCJ6054/TR13

Microsemi Corporation

TVS DIODE 34VWM 61.9VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 34V
• Voltage - Breakdown (Min): 38.7V
• Voltage - Clamping (Max) @ Ipp: 61.9V
• Current - Peak Pulse (10/1000µs): 24A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

paquet: DO-214AB, SMC

BR247D-150G3-12V

Microsemi Corporation

RELAY

• Relay Type: -
• Coil Type: -
• Coil Current: -
• Coil Voltage: -
• Contact Form: -
• Contact Rating (Current): -
• Switching Voltage: -
• Turn On Voltage (Max): -
• Turn Off Voltage (Min): -
• Operate Time: -
• Release Time: -
• Features: -
• Mounting Type: -
• Termination Style: -

paquet: -

JAN2N7369

Microsemi Corporation

TRANS PNP 80V 10A TO254AA

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
• Current - Collector Cutoff (Max): 5mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
• Power - Max: 115 W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-254-3, TO-254AA
• Supplier Device Package: TO-254AA

paquet: -

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