Produits Microsemi Corporation

APT10090BFLLG

Microsemi Corporation

MOSFET N-CH 1000V 12A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 298W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 [B]
• Package / Case: TO-247-3

paquet: TO-247-3

APTJC120AM25VCT1AG

Microsemi Corporation

MOSFET MODULE

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

JANTXV2N5416S

Microsemi Corporation

TRANS PNP 300V 1A TO-39

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
• Current - Collector Cutoff (Max): 1mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
• Power - Max: 750mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)

paquet: TO-205AD, TO-39-3 Metal Can

JANTX1N4973C

Microsemi Corporation

DIODE ZENER 43V 5W E AXIAL

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: E, Axial

paquet: E, Axial

1N4731PE3/TR8

Microsemi Corporation

DIODE ZENER 4.3V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

3EZ4.7D/TR12

Microsemi Corporation

DIODE ZENER 4.7V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±20%
• Power - Max: 3W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

JANTX1N3822DUR-1

Microsemi Corporation

DIODE ZENER 3.6V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±1%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 75µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)

paquet: DO-213AB, MELF (Glass)

JANTX1N5537CUR-1

Microsemi Corporation

DIODE ZENER 17V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 17V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 15.3V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

paquet: DO-213AA (Glass)

JANTXV1N5520D-1

Microsemi Corporation

DIODE ZENER 3.9V 500MW DO35

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

paquet: DO-204AH, DO-35, Axial

JANTXV1N4124CUR-1

Microsemi Corporation

DIODE ZENER 43V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

paquet: DO-213AA (Glass)

JANTXV1N4114CUR-1

Microsemi Corporation

DIODE ZENER 20V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

paquet: DO-213AA (Glass)

JAN1N4958D

Microsemi Corporation

DIODE ZENER 10V 5W AXIAL

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±1%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 7.6V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: E, Axial

paquet: E, Axial

JAN1N4975US

Microsemi Corporation

DIODE ZENER 51V 5W D5B

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 27 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 38.8V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: E-MELF
• Supplier Device Package: D-5B

paquet: E-MELF

JANTX1N4977

Microsemi Corporation

DIODE ZENER 62V 5W AXIAL

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 42 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 47.1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: -

paquet: E, Axial

JAN1N4130C-1

Microsemi Corporation

DIODE ZENER 68V DO35

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±2%
• Power - Max: -
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 51.7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

paquet: DO-204AH, DO-35, Axial

JAN1N751C-1

Microsemi Corporation

DIODE ZENER 5.1V 500MW DO35

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 17 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

paquet: DO-204AH, DO-35, Axial

3EZ22D/TR12

Microsemi Corporation

DIODE ZENER 22V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±20%
• Power - Max: 3W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

1N4615-1

Microsemi Corporation

DIODE ZENER 2V 500MW DO7

• Voltage - Zener (Nom) (Vz): 2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1250 Ohms
• Current - Reverse Leakage @ Vr: 2.5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

paquet: DO-204AA, DO-7, Axial

HSM350J/TR13

Microsemi Corporation

DIODE SCHOTTKY 50V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-214AB, SMC

HSM560GE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 60V 5A DO215AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-215AB, SMC Gull Wing

JAN1N5295-1

Microsemi Corporation

DIODE CURRENT REG 100V

• Function: Current Regulator
• Sensing Method: -
• Accuracy: ±10%
• Voltage - Input: 100V (Max)
• Current - Output: 820µA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

paquet: DO-204AA, DO-7, Axial

M2S010TS-FGG484I

Microsemi Corporation

IC FPGA SOC 10K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 10K Logic Modules
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

paquet: 484-BGA

A3PN060-Z2VQG100I

Microsemi Corporation

IC FPGA 71 I/O 100VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 18432
• Number of I/O: 71
• Number of Gates: 60000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

paquet: 100-TQFP

AGLE600V5-FGG484I

Microsemi Corporation

IC FPGA 270 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 13824
• Total RAM Bits: 110592
• Number of I/O: 270
• Number of Gates: 600000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

paquet: 484-BGA

JAN1N6151A

Microsemi Corporation

TVS DIODE 18.2VWM CPKG AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 18.2V
• Voltage - Breakdown (Min): 22.8V
• Voltage - Clamping (Max) @ Ipp: 33.3V
• Current - Peak Pulse (10/1000µs): 45A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: G, Axial
• Supplier Device Package: C, Axial

paquet: G, Axial

MAPLAD15KP130CA

Microsemi Corporation

TVS DIODE 130VWM 209VC SMD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 130V
• Voltage - Breakdown (Min): 144V
• Voltage - Clamping (Max) @ Ipp: 209V
• Current - Peak Pulse (10/1000µs): 71A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

paquet: Nonstandard SMD

MXLSMBJ12CAE3

Microsemi Corporation

TVS DIODE 12VWM 19.9VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 30.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

paquet: DO-214AA, SMB

MSMBJ20A

Microsemi Corporation

TVS DIODE 20VWM 32.4VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 20V
• Voltage - Breakdown (Min): 22.2V
• Voltage - Clamping (Max) @ Ipp: 32.4V
• Current - Peak Pulse (10/1000µs): 18.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

paquet: DO-214AA, SMB