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Infineon Technologies |
JFET N-CHAN 26A TO247-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 1200V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5µA @ 1200V
- Current Drain (Id) - Max: 26A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
- Resistance - RDS(On): 100 mOhm
- Power - Max: 190W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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paquet: TO-247-3 |
Stock3 424 |
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Infineon Technologies |
IGBT 600V 14A 38W DPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 14A
- Current - Collector Pulsed (Icm): 18A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
- Power - Max: 38W
- Switching Energy: 310µJ (on), 3.28mJ (off)
- Input Type: Standard
- Gate Charge: 15nC
- Td (on/off) @ 25°C: 76ns/815ns
- Test Condition: 480V, 8A, 100 Ohm, 15V
- Reverse Recovery Time (trr): 28ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4 048 |
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Infineon Technologies |
MOSFET N-CH 200V 16A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7 536 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock6 384 |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock4 832 |
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Infineon Technologies |
TRANS RF NPN 12V 20MA SOT363
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- Gain: 20dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: P-SOT363-6
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paquet: 6-VSSOP, SC-88, SOT-363 |
Stock239 400 |
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Infineon Technologies |
IC SWITCH POWER LOSIDE SOT223-4
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 42V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3A
- Rds On (Typ): 35 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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paquet: TO-261-4, TO-261AA |
Stock5 664 |
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Infineon Technologies |
IC DVR HI/LOW SIDE 600V 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 130ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock6 176 |
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Infineon Technologies |
IC OFFLN CONV FLYBACK 12DSO
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 800V
- Topology: Flyback
- Voltage - Start Up: 18V
- Voltage - Supply (Vcc/Vdd): 10.5 V ~ 25 V
- Duty Cycle: 50%
- Frequency - Switching: 52kHz
- Power (Watts): 77W
- Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
- Control Features: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 16-SOIC (0.154", 3.90mm Width) 12 leads
- Supplier Device Package: PG-DSO-12
- Mounting Type: Surface Mount
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paquet: 16-SOIC (0.154", 3.90mm Width) 12 leads |
Stock2 688 |
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Infineon Technologies |
IC SYSTSEM BASIS CHIP 48VQFN
- Applications: Automotive
- Interface: SPI
- Voltage - Supply: -
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-31
- Mounting Type: Surface Mount
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paquet: 48-VFQFN Exposed Pad |
Stock2 176 |
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Infineon Technologies |
IC MCU 32BIT 8KB FLASH 16TSSOP
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 11
- Program Memory Size: 8KB (8K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 11x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: PG-TSSOP-16-8
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paquet: 16-TSSOP (0.173", 4.40mm Width) |
Stock5 728 |
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Infineon Technologies |
IC MCU 16BIT 768KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 66MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 75
- Program Memory Size: 768KB (768K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 82K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: 100-LQFP (14x14)
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paquet: 100-LQFP Exposed Pad |
Stock5 120 |
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Infineon Technologies |
IC MCU 16BIT 64KB OTP 80MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: CAN, EBI/EMI, SPI, SSC, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 59
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: OTP
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 4.75 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 80-QFP
- Supplier Device Package: PG-MQFP-80-7
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paquet: 80-QFP |
Stock14 190 |
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Infineon Technologies |
IC HALL EFFECT SENSOR SSOM-2
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock5 346 |
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Infineon Technologies |
DIODE MOD GP 1400V 89A POWRBLOK
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400 V
- Current - Average Rectified (Io) (per Diode): 89A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: POW-R-BLOK™ Module
- Supplier Device Package: POW-R-BLOK™ Module
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 128KB FLASH 40QFN
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
- Number of I/O: 34
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 20x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 40-UFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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paquet: - |
Stock7 500 |
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Infineon Technologies |
IGBT MOD 1200V 480A 1470W
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 480 A
- Power - Max: 1470 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 256KB FLASH 64TQFP
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit Single-Core
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
- Number of I/O: 53
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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paquet: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 60V 48A D2PAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
AUTOMOTIVE_COOLMOS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
- Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
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paquet: - |
Stock600 |
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Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 187A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 129µA
- Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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paquet: - |
Stock1 449 |
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Infineon Technologies |
OPTIMOS 5 POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 235µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
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paquet: - |
Stock4 362 |
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Infineon Technologies |
IC CONTROLLER D-CH EXCH 44-PLCC
- Function: -
- Interface: PCM
- Number of Circuits: -
- Voltage - Supply: 4.75V ~ 5.25V
- Current - Supply: 10mA
- Power (Watts): -
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead)
- Supplier Device Package: P-LCC-44
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paquet: - |
Request a Quote |
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Infineon Technologies |
TRAVEO-40NM
- Core Processor: ARM® Cortex®-R5F
- Core Size: 32-Bit
- Speed: 240MHz
- Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
- Peripherals: DMA, I2S, LVD, POR, PWM, WDT
- Number of I/O: 150
- Program Memory Size: 2.0625MB (2.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 112K x 8
- RAM Size: 544K x 8
- Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
- Data Converters: A/D 48x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 176-LQFP Exposed Pad
- Supplier Device Package: 176-TEQFP (24x24)
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 512MBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x8)
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paquet: - |
Request a Quote |
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Infineon Technologies |
IGBT 3 CHIP 600V
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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paquet: - |
Request a Quote |
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Infineon Technologies |
MOSFET_(75V 120V( PG-HSOF-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 211W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-4
- Package / Case: 5-PowerSFN
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paquet: - |
Stock8 910 |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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paquet: - |
Request a Quote |
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