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Infineon Technologies |
IGBT 600V 34A 100W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 34A
- Current - Collector Pulsed (Icm): 68A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
- Power - Max: 100W
- Switching Energy: 260µJ (on), 3.45mJ (off)
- Input Type: Standard
- Gate Charge: 50nC
- Td (on/off) @ 25°C: 22ns/540ns
- Test Condition: 480V, 18A, 23 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3 072 |
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Infineon Technologies |
IGBT 600V 18A 34W TO220FP
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 18A
- Current - Collector Pulsed (Icm): 27A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A
- Power - Max: 34W
- Switching Energy: 59µJ (on), 177µJ (off)
- Input Type: Standard
- Gate Charge: 25nC
- Td (on/off) @ 25°C: 34ns/84ns
- Test Condition: 400V, 9A, 22 Ohm, 15V
- Reverse Recovery Time (trr): 72ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220AB Full-Pak
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paquet: TO-220-3 Full Pack |
Stock15 024 |
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Infineon Technologies |
IGBT 600V 16A 60W TO220AB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 16A
- Current - Collector Pulsed (Icm): 64A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
- Power - Max: 60W
- Switching Energy: 70µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 24ns/190ns
- Test Condition: 480V, 9A, 50 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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paquet: TO-220-3 |
Stock16 116 |
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Infineon Technologies |
MOSFET N-CH 40V 375A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
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paquet: DirectFET? Isometric L8 |
Stock5 520 |
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Infineon Technologies |
MOSFET P-CH 30V 7.4A 8DSO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock7 424 |
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Infineon Technologies |
MOSFET N-CH 200V 43A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Rds On (Max) @ Id, Vgs: 54 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3 408 |
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Infineon Technologies |
MOSFET N-CH 900V 5.7A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock6 432 |
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Infineon Technologies |
MOSFET N-CH 500V 4.6A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 342pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 27.2W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 1.8A, 13V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock4 512 |
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Infineon Technologies |
DIODE RF SGL 50V 100MA TSLP-2
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 50V
- Current - Max: 100mA
- Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
- Resistance @ If, F: 4.5 Ohm @ 10mA, 100MHz
- Power Dissipation (Max): 250mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2
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paquet: SOD-882 |
Stock2 000 |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 400µA @ 650V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: TO-247-3 |
Stock5 344 |
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Infineon Technologies |
IC REG LIN 8.5V 400MA TO220-5-3
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 8.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 250mA
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 200µA ~ 25mA
- PSRR: 54dB (100Hz)
- Control Features: Inhibit
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-5 Formed Leads
- Supplier Device Package: PG-TO220-5-3
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paquet: TO-220-5 Formed Leads |
Stock4 128 |
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Infineon Technologies |
IC DVR CURR SENSE PROG D2PAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6 V ~ 32 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 14A
- Rds On (Typ): 15 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Adjustable), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: D2PAK
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paquet: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Stock13 908 |
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Infineon Technologies |
IC PFC CTLR CCM 8DSOP
- Mode: -
- Frequency - Switching: -
- Current - Startup: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock3 168 |
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Infineon Technologies |
IC GATE DRIVER BARE DIE
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock2 976 |
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Infineon Technologies |
IC AUDIO DRIVER CLASS D 16-SOIC
- Type: Class D
- Output Type: 1-Channel (Mono)
- Max Output Power x Channels @ Load: -
- Voltage - Supply: 10 V ~ 15 V
- Features: Short-Circuit Protection, Shutdown
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 125°C (TA)
- Supplier Device Package: 16-SOIC
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
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paquet: 16-SOIC (0.154", 3.90mm Width) |
Stock6 064 |
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Infineon Technologies |
IC CONTROLLER INTERFACE 388-BGA
- Function: Multichannel Network Interface Controller (MUNICH)
- Interface: HDLC, PPP, Serial, TMA
- Number of Circuits: -
- Voltage - Supply: 3 V ~ 3.6 V
- Current - Supply: 200mA
- Power (Watts): 3W
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 388-BBGA
- Supplier Device Package: 388-BGA (35x35)
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paquet: 388-BBGA |
Stock7 136 |
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Infineon Technologies |
IC MCU 16BIT 128KB FLASH 144TQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 40MHz
- Connectivity: CAN, EBI/EMI, I2C, SPI, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 103
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
- Data Converters: A/D 16x8/10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock3 232 |
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Infineon Technologies |
TVS DIODE 5.5VWM 9.2VC TSLP2-17
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 5.5V (Max)
- Voltage - Breakdown (Min): 6V
- Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
- Current - Peak Pulse (10/1000µs): 12A (8/20µs)
- Power - Peak Pulse: 150W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 24pF @ 1MHz
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 2-SMD
- Supplier Device Package: -
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paquet: 2-SMD |
Stock3 744 |
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Infineon Technologies |
IC BRIDGE DRIVER PAR 28DSO
- Output Configuration: Half Bridge (2)
- Applications: DC Motors, General Purpose
- Interface: Logic
- Load Type: Inductive
- Technology: DMOS
- Rds On (Typ): 45 mOhm LS, 70 mOhm HS
- Current - Output / Channel: -
- Current - Peak Output: 12A
- Voltage - Supply: 1.8 V ~ 42 V
- Voltage - Load: 1.8 V ~ 42 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Status Flag
- Fault Protection: Over Temperature, Short Circuit, UVLO
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-28
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paquet: 28-SOIC (0.295", 7.50mm Width) |
Stock6 400 |
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Infineon Technologies |
MOSFET P-CH 100V 23A TO220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 1200V 200A 680W
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 680 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 256KB 100LQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC REG LINEAR FIXED LDO REG
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 1.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.4V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): 1.6 mA
- Current - Supply (Max): -
- PSRR: 65dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-11
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC HALF BRIDGE GATE DRIVER 650V
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): 290mA, 700mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650 V
- Rise / Fall Time (Typ): 100ns, 35ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-53
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paquet: - |
Stock15 126 |
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Infineon Technologies |
IC MCU 8BIT 12KB FLASH 32LQFP
- Core Processor: F²MC-8FX
- Core Size: 8-Bit
- Speed: 16.25MHz
- Connectivity: I2C, LINbus, SIO, UART/USART
- Peripherals: LVD, POR, PWM, WDT
- Number of I/O: 25
- Program Memory Size: 12KB (12K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 512 x 8
- Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
- Data Converters: A/D 8x8/10b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-LQFP
- Supplier Device Package: 32-LQFP (7x7)
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paquet: - |
Stock7 500 |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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paquet: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 1200V 35A 180W
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 180 W
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC PSRAM 256MBIT HYPERBUS 49FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 256Mbit
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 49-VBGA
- Supplier Device Package: 49-FBGA (8x8)
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paquet: - |
Stock774 |
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