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Infineon Technologies |
MOSFET N-CH 20V 2.4A MICRO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8?
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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paquet: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock247 128 |
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Infineon Technologies |
MOSFET N-CH 20V 49A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock28 764 |
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Infineon Technologies |
MOSFET N-CH 20V 54A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7 536 |
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Infineon Technologies |
MOSFET N-CH 75V 130A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock4 480 |
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Infineon Technologies |
MOSFET N-CH 600V 50A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1.24mA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 24.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock12 816 |
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Infineon Technologies |
IC FET RF LDMOS 45W H-30265-2
- Transistor Type: LDMOS
- Frequency: 2.48GHz
- Gain: 14dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 450mA
- Power - Output: 45W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-30265-2
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paquet: 2-Flatpack, Fin Leads |
Stock7 152 |
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Infineon Technologies |
IC AMP RF LDMOS
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 17.5dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.3A
- Power - Output: 40W
- Voltage - Rated: 65V
- Package / Case: H-33288-6
- Supplier Device Package: H-33288-6
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paquet: H-33288-6 |
Stock4 352 |
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Infineon Technologies |
DIODE SCHOTTKY 8V 130MA SOT323
- Diode Type: Schottky - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 8V
- Current - Max: 130mA
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Resistance @ If, F: 10 Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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paquet: SC-70, SOT-323 |
Stock47 634 |
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Infineon Technologies |
IC REG LINEAR 3.3V 1A DPAK
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 7V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.3V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7 856 |
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Infineon Technologies |
IC REG LINEAR 5V 180MA 14SSOP
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 180mA
- Current - Output: 180mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 36µA
- PSRR: 60dB (100Hz)
- Control Features: Enable, Reset
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-SSOP-14-EP
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paquet: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad |
Stock5 280 |
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Infineon Technologies |
IC SWITCH IPS 1CH LOW SIDE DPAK
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 28V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2.2A
- Rds On (Typ): 80 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6 752 |
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Infineon Technologies |
IC MOTOR DRIVER PAR 36-PQFN
- Motor Type - Stepper: -
- Motor Type - AC, DC: AC, Synchronous
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (3)
- Interface: Parallel
- Technology: UMOS
- Step Resolution: -
- Applications: Appliance
- Current - Output: 3A
- Voltage - Supply: 13.5 V ~ 16.5 V
- Voltage - Load: 400V (Max)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 36-PowerVQFN
- Supplier Device Package: 36-PQFN (12x12)
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paquet: 36-PowerVQFN |
Stock14 316 |
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Infineon Technologies |
IC VOICE ACCESS CODEC TQFP64
- Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
- Interface: IOM-2, PCM
- Number of Circuits: 2
- Voltage - Supply: 3.3V
- Current - Supply: 105mA
- Power (Watts): -
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: P-TQFP-64
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paquet: 64-LQFP |
Stock5 008 |
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Infineon Technologies |
IC MCU 32BIT ROMLESS 208LBGA
- Core Processor: TriCore?
- Core Size: 32-Bit
- Speed: 100MHz
- Connectivity: CAN, EBI/EMI, FIFO, I2C, IrDA, SPI, UART/USART, USB
- Peripherals: DMA, POR, PWM, WDT
- Number of I/O: 72
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 144K x 8
- Voltage - Supply (Vcc/Vdd): 1.43 V ~ 1.58 V
- Data Converters: -
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 208-LBGA
- Supplier Device Package: P-LBGA-208-2
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paquet: 208-LBGA |
Stock3 200 |
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Infineon Technologies |
IC BRIDGE DRIVER PAR 28DSO
- Output Configuration: Half Bridge (2)
- Applications: DC Motors, General Purpose
- Interface: Logic
- Load Type: Inductive
- Technology: DMOS
- Rds On (Typ): 45 mOhm LS, 70 mOhm HS
- Current - Output / Channel: -
- Current - Peak Output: 14A
- Voltage - Supply: 1.8 V ~ 42 V
- Voltage - Load: 1.8 V ~ 42 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Status Flag
- Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-28
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paquet: 28-SOIC (0.295", 7.50mm Width) |
Stock22 356 |
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Infineon Technologies |
IC FLASH 64MBIT PARALLEL 48FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 90 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-FBGA (8.15x6.15)
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC MM MCU 64LQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
DIODE GEN PURP 2.8KV 4810A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2800 V
- Current - Average Rectified (Io): 4810A
- Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 mA @ 2800 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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paquet: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 650V 100A 335W
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 335 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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paquet: - |
Stock30 |
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Infineon Technologies |
IC FLASH 512MBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x8)
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paquet: - |
Stock7 635 |
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Infineon Technologies |
IC SECURITY CTRLR 16BIT MFC5.8
- Applications: -
- Core Processor: -
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: -
- Number of I/O: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: S-MFC5.8-8-1
- Supplier Device Package: S-MFC5.8-8
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC REG LINEAR FIXED STNDRD REG
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 42V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 2.5V @ 200mA
- Current - Output: 250mA
- Current - Quiescent (Iq): 5 mA
- Current - Supply (Max): -
- PSRR: 55dB (100Hz)
- Control Features: Enable, Hold, Reset
- Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-14
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paquet: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 100V 260A 8HSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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paquet: - |
Stock10 731 |
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Infineon Technologies |
IC MCU 32BIT 128KB FLASH 40QFN
- Core Processor: ARM® Cortex®-M0
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
- Number of I/O: 17
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 12K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: -
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-UFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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paquet: - |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W
- Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO220-3-5
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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paquet: - |
Request a Quote |
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Infineon Technologies |
HIGH POWER_LEGACY
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34.5W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-31
- Package / Case: TO-220-3 Full Pack
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paquet: - |
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Infineon Technologies |
DIODE GEN PURP 600V 30A TO247-3
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Request a Quote |
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