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Infineon Technologies |
MOSFET N-CH TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock4 992 |
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Infineon Technologies |
MOSFET N-CH 60V 195A D2-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5 184 |
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6 448 |
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Infineon Technologies |
MOSFET P-CH 250V 0.19A SOT-89
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT89
- Package / Case: TO-243AA
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paquet: TO-243AA |
Stock6 592 |
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Infineon Technologies |
MOSFET N-CH 20V 39A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock106 776 |
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Infineon Technologies |
MOSFET N-CH 650V TO247-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 850µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 171W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
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paquet: TO-247-4 |
Stock3 376 |
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Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock387 036 |
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Infineon Technologies |
IC DIODE EMITTER CTLR WAFER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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paquet: - |
Stock5 440 |
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Infineon Technologies |
IC CTLR PWM BUCK SYNC 12-MLPD
- Applications: Controller, DDR
- Voltage - Input: 4.5 V ~ 14 V
- Number of Outputs: 1
- Voltage - Output: 0.6 V ~ 9.94 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 12-VFDFN Exposed Pad
- Supplier Device Package: 12-MLPD (3x4)
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paquet: 12-VFDFN Exposed Pad |
Stock61 980 |
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Infineon Technologies |
IC REG BUCK ADJ 12A SYNC 15QFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.5V
- Voltage - Input (Max): 21V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 12V
- Current - Output: 12A
- Frequency - Switching: 600kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 15-PowerVQFN
- Supplier Device Package: PQFN (5x6)
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paquet: 15-PowerVQFN |
Stock5 776 |
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Infineon Technologies |
IC DVR DUAL HIGH SIDE 16-SOIC
- Driven Configuration: High-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.6V, 3.5V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 15ns, 15ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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paquet: 16-SOIC (0.154", 3.90mm Width) |
Stock5 040 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.9V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 130ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock6 048 |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 44-PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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paquet: 44-LCC (J-Lead), 32 Leads |
Stock275 508 |
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Infineon Technologies |
IC MOTOR DRIVER 600V 23DIP
- Output Configuration: Half Bridge (3)
- Applications: AC Motors
- Interface: Logic
- Load Type: Inductive
- Technology: UMOS
- Rds On (Typ): 340 mOhm
- Current - Output / Channel: 4.6A
- Current - Peak Output: 15A
- Voltage - Supply: 13.5 V ~ 16.5 V
- Voltage - Load: 200V (Max)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit
- Fault Protection: UVLO
- Mounting Type: Through Hole
- Package / Case: 23-DIP Module
- Supplier Device Package: 23-DIPA
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paquet: 23-DIP Module |
Stock6 464 |
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Infineon Technologies |
IC MOTOR DRIVER 250V 23DIP
- Output Configuration: Half Bridge (3)
- Applications: AC Motors
- Interface: Logic
- Load Type: Inductive
- Technology: UMOS
- Rds On (Typ): 1.8 Ohm
- Current - Output / Channel: 1.6A
- Current - Peak Output: 7A
- Voltage - Supply: 13.5 V ~ 16.5 V
- Voltage - Load: 200V (Max)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit
- Fault Protection: UVLO
- Mounting Type: Through Hole
- Package / Case: 32-PowerDIP Module, 23 Leads
- Supplier Device Package: 23-DIP
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paquet: 32-PowerDIP Module, 23 Leads |
Stock5 040 |
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Infineon Technologies |
IC MOTOR DRIVER PAR TO263-7
- Output Configuration: Half Bridge
- Applications: DC Motors, General Purpose
- Interface: Logic
- Load Type: Inductive
- Technology: DMOS
- Rds On (Typ): 4.7 mOhm LS, 5.3 mOhm HS
- Current - Output / Channel: 50A
- Current - Peak Output: 117A
- Voltage - Supply: 6 V ~ 40 V
- Voltage - Load: 6 V ~ 40 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Latch Function, Slew Rate Controlled, Status Flag
- Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
- Mounting Type: Surface Mount
- Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
- Supplier Device Package: PG-TO263-7
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paquet: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
Stock23 628 |
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Infineon Technologies |
IC MCU 32BIT 2.5MB FLASH 144TQFP
- Core Processor: TriCore?
- Core Size: 32-Bit Dual-Core
- Speed: 200MHz
- Connectivity: ASC, CAN, Ethernet, FlexRay, HSSL, I2C, LIN, MSC, PSI5, QSPI, SENT
- Peripherals: DMA, WDT
- Number of I/O: 88
- Program Memory Size: 2.5MB (2.5M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 96K x 8
- RAM Size: 240K x 8
- Voltage - Supply (Vcc/Vdd): 3.3V, 5V
- Data Converters: A/D 40x12b, 3 x Sigma-Delta
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock6 992 |
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Infineon Technologies |
IC REGULATOR PG-VQFN-40-902
- Applications: Controller, DDR, Intel VR12, AMD SVI
- Voltage - Input: 3.3V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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paquet: 40-VFQFN Exposed Pad |
Stock3 536 |
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Infineon Technologies |
IC MCU 80MQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock2 992 |
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Infineon Technologies |
PSOC BASED - TRUETOUCH
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): 32 b
- Interface: I2C, SPI
- Voltage Reference: Internal
- Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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paquet: - |
Request a Quote |
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Infineon Technologies |
LANTIQ PSB3427 TELECOMS IC
- Function: -
- Interface: -
- Number of Circuits: -
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
IGBT 650V 42A TO220-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 42 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 125 W
- Switching Energy: 170µJ (on), 60µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 18ns/156ns
- Test Condition: 400V, 10A, 32Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
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paquet: - |
Stock1 308 |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, WDT
- Number of I/O: 54
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 64-VFQFN Exposed Pad
- Supplier Device Package: 64-QFN (9x9)
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 256MBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 256Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 66 MHz
- Write Cycle Time - Word, Page: 60µs, 1.2ms
- Access Time: 6 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x8)
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paquet: - |
Request a Quote |
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Infineon Technologies |
ASYNC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 294W (Tc)
- Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-900
- Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
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paquet: - |
Request a Quote |
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Infineon Technologies |
7C083134A-16BBC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous, Standard
- Memory Size: 2Mbit
- Memory Interface: Parallel
- Clock Frequency: 167 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
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paquet: - |
Request a Quote |
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Infineon Technologies |
DRIVER IC PG-TSSOP-8
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: 1.4V, 1.9V
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 8.6ns, 6ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: PG-TSSOP-8
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paquet: - |
Stock11 892 |
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