Produits Infineon Technologies

IGP50N60TXKSA1

Infineon Technologies

IGBT 600V 100A 333W TO220-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 333W
• Switching Energy: 2.6mJ
• Input Type: Standard
• Gate Charge: 310nC
• Td (on/off) @ 25°C: 26ns/299ns
• Test Condition: 400V, 50A, 7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

paquet: TO-220-3

IRG4PC30UDPBF

Infineon Technologies

IGBT 600V 23A 100W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): 92A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 380µJ (on), 160µJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 40ns/91ns
• Test Condition: 480V, 12A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

paquet: TO-247-3

IPA50R800CE

Infineon Technologies

MOSFET N-CH 500V 5A PG-TO220 FPK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 13V
• Vgs(th) (Max) @ Id: 3.5V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 26.4W (Tc)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.5A, 13V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-FP
• Package / Case: TO-220-3 Full Pack

paquet: TO-220-3 Full Pack

BSP296L6433HTMA1

Infineon Technologies

MOSFET N-CH 100V 1.1A SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 400µA
• Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.79W (Ta)
• Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

paquet: TO-261-4, TO-261AA

IRFB4310ZGPBF

Infineon Technologies

MOSFET N-CH 100V 120A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

paquet: TO-220-3

BSS138N E6908

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

SI4420DYPBF

Infineon Technologies

MOSFET N-CH 30V 12.5A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

paquet: 8-SOIC (0.154", 3.90mm Width)

IRF3315SPBF

Infineon Technologies

MOSFET N-CH 150V 21A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
• Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFS7730-7PPBF

Infineon Technologies

MOSFET N-CH 75V 240A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 428nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13970pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

paquet: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IRF6723M2DTR1P

Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A
• Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
• Power - Max: 2.7W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DirectFET? Isometric MA
• Supplier Device Package: DIRECTFET? MA

paquet: DirectFET? Isometric MA

BFP520E6327BTSA1

Infineon Technologies

TRANS NPN RF 2.5V SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 3.5V
• Frequency - Transition: 45GHz
• Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
• Gain: 24dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (Ic) (Max): 40mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

paquet: SC-82A, SOT-343

BBY 53-02W E6327

Infineon Technologies

DIODE TUNING 6V 20MA SCD-80

• Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
• Capacitance Ratio: 2.6
• Capacitance Ratio Condition: C1/C3
• Voltage - Peak Reverse (Max): 6V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

paquet: SC-80

SIDC30D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 35A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 35A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 35A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: Die

IR3821AMTRPBF

Infineon Technologies

IC REG BUCK ADJ 9A SYNC 15QFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2.5V
• Voltage - Input (Max): 21V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 12V
• Current - Output: 9A
• Frequency - Switching: 300kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 15-PowerVQFN
• Supplier Device Package: PQFN (5x6)

paquet: 15-PowerVQFN

IRSM836-044MA

Infineon Technologies

IC MOTOR DRIVER PAR 36-PQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: AC, Synchronous
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (3)
• Interface: Parallel
• Technology: UMOS
• Step Resolution: -
• Applications: Appliance
• Current - Output: 4A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 200V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 36-PowerVQFN
• Supplier Device Package: 36-PQFN (12x12)

paquet: 36-PowerVQFN

IR2131J

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 44-PLCC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead), 32 Leads
• Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

paquet: 44-LCC (J-Lead), 32 Leads

ADM6926X-AB-T-1

Infineon Technologies

IC ETHERNET SW CTRLR 128QFP

• Protocol: -
• Function: -
• Interface: -
• Standards: -
• Voltage - Supply: 3.135 V ~ 3.465 V
• Current - Supply: -
• Operating Temperature: 0°C ~ 115°C
• Package / Case: 128-BFQFP
• Supplier Device Package: P-FQFP-128

paquet: 128-BFQFP

SIGC12T60NCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 10 A
• Current - Collector Pulsed (Icm): 30 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 21ns/110ns
• Test Condition: 300V, 10A, 27Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

paquet: -

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FZ1600R17HP4HOSA2

Infineon Technologies

IGBT MODULE 1700V 1600A

• IGBT Type: Trench
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 1600 A
• Power - Max: 10500 W
• Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1300A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

paquet: -

IPDD60R145CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 24A HDSOP-10

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4.5V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 160W (Tc)
• Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-10-1
• Package / Case: 10-PowerSOP Module

paquet: -

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FP35R12KT4PBPSA1

Infineon Technologies

IGBT MOD 1200V 70A 20MW

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 70 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

paquet: -

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CY22391LTXC-08T

Infineon Technologies

IC CLOCK GENERATOR

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

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CY15B101N-ZS60XM

Infineon Technologies

IC FRAM 1MBIT PARALLEL 44TSOP II

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 1Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 90ns
• Access Time: 90 ns
• Voltage - Supply: 2V ~ 3.6V
• Operating Temperature: -55°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

paquet: -

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CY25100SXI-030T

Infineon Technologies

IC FIELD/FACTRY PROG SSCLK 8SOIC

• Type: Clock Generator
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: 200MHz
• Divider/Multiplier: -
• Voltage - Supply: 3.13V ~ 3.45V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

paquet: -

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FZ600R12KS4HOSA1

Infineon Technologies

IGBT MOD 1200V 700A 3900W

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 700 A
• Power - Max: 3900 W
• Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

paquet: -

S80KS5123GABHA020

Infineon Technologies

IC PSRAM 512MBIT SPI/OCTL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 512Mbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

paquet: -

SIGC76T60R3EX7SA1

Infineon Technologies

IGBT TRENCH FS 600V 150A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 150 A
• Current - Collector Pulsed (Icm): 450 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

paquet: -

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CY9AFA41NBBGL-GK9E1

Infineon Technologies

IC MCU 32BIT 96KB FLASH 112BGA

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, UART/USART
• Peripherals: DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 24x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 112-LFBGA
• Supplier Device Package: 112-PFBGA (10x10)

paquet: -

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